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Details, datasheet, quote on part number:TPS819
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| Part: | TPS819 |
| Category: | Optoelectronics => Photosensors |
| Description: | Package Type (mm3) = Chip Type (3.2x2.4x1.1) ;; Features = Linear Output ;; Light Current Characteristics = IL=50-100uA @Ev=100 LX ;; Peak Sensitivity Wavelength = 550 ;; Applications = Illuminance Sensor |
| Company: | Toshiba America Electronic Components, Inc. |
| Datasheet: | Download TPS819 datasheet File size : 173 kB |
| Request For quote: | Find where to buy TPS819
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Datasheet text preview:
TPS819
TOSHIBA Photo IC Silicon Epitaxial Planar
TPS819
Mobile Phones, PHS, Pagers Notebook PCs, PDAs Cameras Other Equipment Requiring Luminosity Adjustment
The TPS819 is a linear-output photo-IC which incorporates a photodiode and a current amp circuit in a single chip. This photo-IC also incorporates a luminous-efficiency correction filter, so output value is close to luminosity characteristics. · · · · High sensitivity : IL = 50~100 µA @EV = 100 lx p = 522 nm LED Luminous efficiency correction filter mounted on detector : p = 550 nm (typ.) Open-emitter output Compact and light surface-mount package Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Supply voltage Output voltage Light current Permissible power dissipation Operating temperature range Storage temperature range Soldering temperature range (Note 1) Symbol V CC VOUT IL P Topr Tstg Tsol Rating -0.5~7 < V CC = 10 70 -25~85 -40~100 260 Unit V V mA mW °C °C °C
TOSHIBA Weight: 0.017 g (typ.)
Note 1: The reflow time and the recommended temperature profile are shown in the section entitled Handling Precautions.
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TPS819
Recommended Operating Conditions
Characteristics Supply voltage Lead resistance Symbol V CC RL Min 2.2 510 Typ. ¾ ¾ Max 5.5 ¾ Unit V W
Electrical and Optical Characteristics (Ta = 25°C)
Characteristics Supply current Light current (1) Light current (2) Light current (3) Symbol I CC IL (1) IL (2) IL (3) Test Condition VCC = 3 V, EV = 1000 lx, RL = 1 kW (Note 2) VCC = 3 V, EV = 10 lx (Note 2, 5) VCC = 3 V, EV = 100 lx (Note 2, 5) VCC = 3 V, lp = 522 nm, EV = 100 lx (Note 3, 5) Min ¾ ¾ ¾ 50 Typ. 2 20 200 ¾ Max ¾ ¾ ¾ 100 mA Unit mA
IL (IR)
Light current ratio
IL (3)
(Note 4, 5) ILEAK Vo lp tr VCC = 3.3 V, EV = 0 VCC = 3 V, RL = 75 kW, EV = 100 lx (Note 3) ¾
¾ ¾ 2.2 ¾ ¾ VCC = 3 V, RL = 5 kW, lp = 522 nm (Note 6) ¾ ¾ ¾
0.03
0.10
Dark current Saturation output voltage Peak sensitivity wavelength
¾ 2.35 550 0.2 1 0.3 0.02
0.5 ¾ ¾ ¾ ¾ ¾ ¾
mA V nm
Switching time
tf td ts
ms
Note 2: CIE standard A light source is used (color temperature = 2856K) Note 3: Green LED (lp = 522 nm) is used as light source and set an illuminance meter for 100 lx. Light current classification: A Rank: 50~83.5 mA, B Rank: 60~100 mA Note 4: Infrared LED (lp = 870 nm) is used as light source for IL (IR) and light current is set to obtain VCC = 3 V and 2 E = 0.01 mW/cm . Note 5: Light current measurement circuit
IF LED TPS819 A V CC IL OUT
Note 6: Rise time/fall time measurement method
Pulse drive lp = 522 nm LED V CC OUT RL
IF td 1.5 V ts 90%
TPS819
VOUT GND 10% tr tf
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TPS819
Package Dimensions
Weight: 0.017 g (typ.)
Pin Connection
3 V CC Current amp
4 OUT 1 GND 2 GND
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