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Details, datasheet, quote on part number:0.15.3MI.pdf
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Datasheet text preview:
0.15-µm pHEMT 3MI
Process Data Sheet
PROTECTIVE OVERCOAT 4.0 µm METAL 2 2.0 µm METAL 1 2000 Å NITRIDE 2 MIM METAL 500 Å NITRIDE 1 0.75 µm METAL 0 TaN RESISTOR 500 Å NITRIDE 0 T-GATE ACTIVE REGION OHMIC METAL (EXCEPT VIA) SEMI-INSULATING GaAs SUBSTRATE
Features
· · · · · · · · · · · · ·
0.15-µm amplifier transistors 0.15-µm switch transistors 0.15-µm, 2-µm and 4-µm diodes High Q passives 3 MIM capacitance densities TaN resistors GaAs resistors High-density interconnects 3 metal layers Air bridges Substrate vias Protective overcoat Operation up to Vd = 3 V
Applications
VIA UNDER CAP
0.15-µm 3MI Process Cross Section
General Description
The 0.15-µm pHEMT 3MI (3-metal-interconnect) process utilizes T-gates in conjunction with a pHEMT material structure optimized for low-noise operation. It is suitable for applications through 80 GHz. These depletion-mode transistors demonstrate the lowest noise figure available in a TriQuint Texas process, with a high level of available gain. The 0.15-µm pHEMT 3MI process has demonstrated excellent performance in low-noise amplifiers, small signal gain block amplifiers, driver amplifiers, wideband data amplifiers, mixers, multipliers and VCO's. The via-under-cap process aids in size compaction and offers excellent grounds at higher frequencies.
· · · · · · · · · · · · · · · · · ·
Up to 80 GHz Communications Military Low-noise amplifiers Driver amplifiers Digital and analog phase shifters AGC amplifiers Limiting amplifiers Transimpedance amplifiers Differential amplifiers Switches Broadband data amplifiers VCOs Multipliers Mixers (up and down converters) Point-to-point radio Point-to-multipoint radio Automotive radar
500 West Renner Road Richardson, Texas 75080
Semiconductors for Communications, Space and Military www.TriQuint.com
Page 1 of 6; 9/24/02
Phone: 972-994-8200 Foundry: 972-994-4545 Email: info@triquint.com
Specifications are subject to change.
0.15-µm pHEMT 3MI
Process Data Sheet
0.15-µm pHEMT 3MI Process Details Element Parameter Typical Value Units FETs Idss 130 mA/mm Gm Vbd Vp Ft (peak) MIM capacitors density 475 -8 -0.4 110 240 300 Capacitors over vias TaN resistors sheet resistance GaAs resistors sheet resistance Vias Substrate thickness 1200 yes 50 140 yes 100 mS/mm V V GHz pF/mm pF/mm
2 2 2
pF/mm V/sq V/sq µm
0.15-µm pHEMT 3MI DC Characteristics 200-µm FET
0.14 0.12 0.10 Ids (A) 0.08 0.06 0.04 0.02 0.00 0 2 4 Vds (V) 6 8 Vgs Vgs Vgs Vgs Vgs = = = = = 0.7 V 0.3 V 0V -0.3 V -0.7 V
500 West Renner Road Richardson, Texas 75080
Semiconductors for Communications, Space and Military www.TriQuint.com
Page 2 of 6; 9/24/02
Phone: 972-994-8200 Foundry: 972-994-4545 Email: info@triquint.com
Specifications are subject to change.
0.15-µm pHEMT 3MI
Process Data Sheet
0.15-µm pHEMT 3MI Minimum Noise Figure 200-µm FET @ 3 Volts, 15 mA
2.0 1.8 1.6 NFmin (dB) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 10 20 30 Frequency (GHz) 40 50
0.15-µm pHEMT 3MI Maximum Available Gain/Stable Gain (MAG/MSG) 200-µm FET @ 3 Volts, 15 mA
25 20 MAG/MSG (dB) 15 10 5 0 0 10 20 30 40 50 Frequency (GHz) 60 70 80 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 Stability Factor (K)
500 West Renner Road Richardson, Texas 75080
Semiconductors for Communications, Space and Military www.TriQuint.com
Page 3 of 6; 9/24/02
Phone: 972-994-8200 Foundry: 972-994-4545 Email: info@triquint.com
Specifications are subject to change.
0.15-µm pHEMT 3MI
Process Data Sheet
0.15-µm pHEMT 3MI Power Tuned Load 200-µm FET @ 3 Volts, 30 GHz
20
40.00
Pout (dBm)
10
20.00
5
0 5 Pin (dBm) 10 15
10.00
0.15-µm pHEMT 3MI Efficiency Tuned Load 200-µm FET @ 3 Volts, 30 GHz
20
40.00
Pout (dBm)
10
20.00
5
0 5 Pin (dBm)
500 West Renner Road Richardson, Texas 75080
10.00 10 15
PAE (%)
Phone: 972-994-8200 Foundry: 972-994-4545 Email: info@triquint.com
15
30.00
Semiconductors for Communications, Space and Military www.TriQuint.com
Page 4 of 6; 9/24/02
Specifications are subject to change.
PAE (%)
15
30.00
0.15-µm pHEMT 3MI
Process Data Sheet
FET Models Available Gate Pitch (µm) Gate Fingers FET Sizes (µm) 12 18 4 100, 200 & 300 12 18 6 300 12 18 8 400
Application Examples
21 to 27 GHz Low-Noise Amplifier TGA4506-EPU: This low-noise amplifier has less than 2-dB noise figure at 24 GHz with a 20-dB nominal gain. Applications include point-to-point radios, point-to-multipoint radios and local multipoint distribution systems (LMDS). 27 to 32 GHz Low-Noise Amplifier TGA4507-EPU: This low-noise amplifier has 2.7-dB noise figure at 30 GHz with a 17-dB midband gain. Applications include point-to-point radios, point-to-multipoint radios and Ka band VSAT. 37 to 42 GHz Low Noise Amplifier TGA4508-EPU: This low-noise amplifier has 2.7-dB noise figure at 39 GHz with a 13.5-dB nominal gain. Applications include point-to-point radios and point-to-multipoint radios.
500 West Renner Road Richardson, Texas 75080
Semiconductors for Communications, Space and Military www.TriQuint.com
Page 5 of 6; 9/24/02
Phone: 972-994-8200 Foundry: 972-994-4545 Email: info@triquint.com
Specifications are subject to change.
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