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Part: 0.25.Ku.2MI.pdf
Category:
Others
Description: 0.25-µm ku Phemt 2mi
Company: TriQuint Semiconductor
Datasheet: Download 0.25.Ku.2MI.pdf datasheet File size : 87 kB
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Datasheet text preview:
0.25-µm Ku pHEMT 2MI
Process Data Sheet
4.6 µm PLATING CAP TOP PLATE 2000 Å NITRIDE 0.75 µm FIRST METAL TaN RESISTOR T-GATE ACTIVE REGION OHMIC METAL (EXCEPT VIA) SEMI-INSULATING GaAs SUBSTRATE
Features
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0.25-µm amplifier transistors 0.25-µm switch transistors 0.25-µm diodes Device passivation High-Q passives MIM capacitors TaN resistors GaAs resistors 2 metal layers Air bridges Substrate vias Operation up to Vd = 9 V Up to 20 GHz Communications Space Military Power amplifiers Driver amplifiers Low-noise amplifiers AGC amplifiers Limiting amplifiers Transimpedance amplifiers Differential amplifiers Digital and analog phase shifters Digital and analog attenuators Mixers (up and down converters) Switches Oscillators
VIA UNDER CAP
0.25-µm 2MI Process Cross Section
Applications
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General Description
The 0.25-µm Ku pHEMT 2MI (2-metal-interconnect) process utilizes T-gate depletion-mode transistors and is optimized for high power applications through 20 GHz. The process demonstrates comparable power density and gain to the 0.25-µm mmW pHEMT 2MI process at X-band frequencies and similar bias conditions. However, the 0.25µm Ku pHEMT offers a higher breakdown voltage allowing higher bias voltages to be applied to deliver higher power densities. Passives include 2 thick-metal interconnect layers, precision TaN resistors, GaAs resistors, MIM capacitors and through-substrate vias. The via-under-cap process aids in size compaction and offers excellent grounds at higher frequencies. Air bridges produce minimal interconnect capacitance. This process is suitable for commercial, military and space applications.
500 West Renner Road Richardson, Texas 75080
Semiconductors for Communications, Space and Military www.TriQuint.com
Page 1 of 6; 9/24/02
Phone: 972-994-8200 Foundry: 972-994-4545 Email: info@triquint.com
Specifications are subject to change.
0.25-µm Ku pHEMT 2MI
Process Data Sheet
0.25-µm Ku pHEMT 2MI Process Details Element Parameter Typical Value Units FETs Idss 285 mA/mm Imax Gm Vbd Vp Ft (peak) MIM capacitors Capacitors over vias TaN resistors GaAs resistors Vias Substrate density sheet resistance sheet resistance thickness 510 375 -19 -1 65 300 yes 50 160 yes 100 mA/mm mS/mm V V GHz pF/mm V/sq V/sq µm
2
0.25-µm Ku pHEMT 2MI DC Characteristics 300-µm FET
0.16 0.14 0.12 Ids (A) 0.10 0.08 0.06 0.04 0.02 0.00 0 5 Vds (V) 10 15 Vgs = 0.7 V Vgs = 0.3 V Vgs = 0 V Vgs = -0.3 V Vgs = -0.7 V Vgs = -0.9 V
500 West Renner Road Richardson, Texas 75080
Semiconductors for Communications, Space and Military www.TriQuint.com
Page 2 of 6; 9/24/02
Phone: 972-994-8200 Foundry: 972-994-4545 Email: info@triquint.com
Specifications are subject to change.
0.25-µm Ku pHEMT 2MI
Process Data Sheet
0.25-µm Ku pHEMT 2MI Minimum Noise Figure 800-µm FET @ 3 Volts, 60 mA
3.0 2.5 NFmin (dB) 2.0 1.5 1.0 0.5 0.0 0 5 10 15 Frequency (GHz) 20 25 30
0.25-µm Ku pHEMT 2MI Maxim u m Available Gain/Stable Gain (MAG/MSG) 800-µm FET @ 3 Volts, 60 mA
25 20 MAG/MSG (dB) 15 10 5 0 0 10 Frequency (GHz) 20 30 1.4 1.2 1 0.8 0.6 0.4 0.2 0 Stability Factor (K)
500 West Renner Road Richardson, Texas 75080
Semiconductors for Communications, Space and Military www.TriQuint.com
Page 3 of 6; 9/24/02
Phone: 972-994-8200 Foundry: 972-994-4545 Email: info@triquint.com
Specifications are subject to change.
0.25-µm Ku pHEMT 2MI
Process Data Sheet
0.25-µm Ku pHEMT 2MI Power Tuned Load 800-µm FET @ 9 Volts, 10 GHz
35 30 Pout (dBm) 25 20 15 5 10 15 Pin (dBm) 20 25 55 45 35 25 15 PAE (%)
PAE (%)
Phone: 972-994-8200 Foundry: 972-994-4545 Email: info@triquint.com
0.25-µm Ku pHEMT 2MI Efficiency Tuned Load 800-µm FET @ 9 Volts,10 GHz
35 30 Pout (dBm) 25 20 15 5 10 15 Pin (dBm) 20 25 55 45 35 25 15
500 West Renner Road Richardson, Texas 75080
Semiconductors for Communications, Space and Military www.TriQuint.com
Page 4 of 6; 9/24/02
Specifications are subject to change.
0.25-µm Ku pHEMT 2MI
Process Data Sheet
FET Models Available Gate Pitch (µm) Gate Fingers FET Sizes (µm) 25 40 12 1200 26 26 4 300 26 26 8 640 26 26 10 800 & 1200 26 26 12 960 & 1440 30 30 8 880 & 1000 32 32 8 640 & 960 32 32 10 800 & 1200 32 32 12 1440 38 38 6 600
Application Examples
6 to 18 GHz Power Amplifier TGA2501-EPU: This power amp has a nominal gain of 24 dB when biased at 8 V, 1.2 A 6 to 13 GHz Low-Noise Amplifier TGA8399B-SCC: This LNA operates from 6 to 13 GHz with a typical midband noise figure of 1.5 dB. The device features high gain, 26 dB across the band, while providing a 11 dBm nominal output power at 10 dB gain compression.
500 West Renner Road Richardson, Texas 75080
Semiconductors for Communications, Space and Military www.TriQuint.com
Page 5 of 6; 9/24/02
Phone: 972-994-8200 Foundry: 972-994-4545 Email: info@triquint.com
Specifications are subject to change.
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