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Part: 0.25.mmW.2MI.pdf
Category:
Others
Description: 0.25-µm MMW Phemt 2mi
Company: TriQuint Semiconductor
Datasheet: Download 0.25.mmW.2MI.pdf datasheet File size : 87 kB
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Datasheet text preview:
0.25-µm mmW pHEMT 2MI
Process Data Sheet
4.6 µm PLATING CAP TOP PLATE 2000 Å NITRIDE 0.75 µm FIRST METAL TaN RESISTOR T-GATE ACTIVE REGION OHMIC METAL (EXCEPT VIA) SEMI-INSULATING GaAs SUBSTRATE
Features
· · · · · · · · · · · ·
0.25-µm amplifier transistors 0.25-µm switch transistors 0.25-µm diodes Device passivation High-Q passives MIM capacitors TaN resistors GaAs resistors 2 metal layers Air bridges Substrate vias Operation up to Vd = 7 V
VIA UNDER CAP
0.25-µm 2MI Process Cross Section
Applications
· · · · · · · · · · · · · · · · · · ·
General Description
The 0.25-µm mmW pHEMT 2MI (2-metal-interconnect) process utilizes T-gate depletion-mode transistors and is optimized for high-power and low-noise applications through 50 GHz. Passives include 2 thick-metal interconnect layers, precision TaN resistors, GaAs resistors, MIM capacitors and through-substrate vias. The via-under-cap process aids in size compaction and offers excellent grounds at higher frequencies. Air bridges produce minimal interconnect capacitance. This process is suitable for commercial, military and space applications.
Up to 50 GHz Communications Space Military Power amplifiers Driver amplifiers Low-noise amplifiers AGC amplifiers Limiting amplifiers Transimpedance amplifiers Differential amplifiers Digital and analog phase shifters Digital and analog attenuators Mixers (up and down converters) Point-to-point radio Point-to-multipoint radio Multipliers Switches Oscillators
500 West Renner Road Richardson, Texas 75080
Semiconductors for Communications, Space and Military www.TriQuint.com
Page 1 of 6; 9/24/02
Phone: 972-994-8200 Foundry: 972-994-4545 Email: info@triquint.com
Specifications are subject to change.
0.25-µm mmW pHEMT 2MI
Process Data Sheet
0.25-µm mmW pHEMT Process Details Element Parameter Typical Value Units FETs Idss 285 mA/mm Imax Gm Vbd Vp Ft (peak) MIM capacitors Capacitors over vias TaN resistors GaAs resistors Vias Substrate density sheet resistance sheet resistance thickness 510 375 -17 -1 65 300 yes 50 160 yes 100 mA/mm mS/mm V V GHz pF/mm V/sq V/sq µm
2
0.25-µm mmW pHEMT 2MI DC Characteristics 200-µm FET
0.12 0.10 0.08 Ids (A) 0.06 0.04 0.02 0.00 0 2 4 6 Vds (V) 8 10 12 Vgs = 0.7 V Vgs = 0.3 V Vgs = 0 V Vgs = -0.3 V Vgs = -0.7 V Vgs = -0.9 V
500 West Renner Road Richardson, Texas 75080
Semiconductors for Communications, Space and Military www.TriQuint.com
Page 2 of 6; 9/24/02
Phone: 972-994-8200 Foundry: 972-994-4545 Email: info@triquint.com
Specifications are subject to change.
0.25-µm mmW pHEMT 2MI
Process Data Sheet
0.25-µm mmW pHEMT 2MI Minimum Noise Figure 200-µm FET @ 3 Volts, 15 mA
3.0 2.5 NFmin (dB) 2.0 1.5 1.0 0.5 0.0 0 10 20 30 Frequency (GHz) 40 50
0.25-µm mmW pHEMT 2MI Maximum Available Gain/Stable Gain (MAG/MSG) 600-µm FET @ 6 Volts, 60 mA
25 20 MAG/MSG (dB) 15 10 5 0 0 10 20 30 Frequency (GHz) 40 50 1.2 1 0.8 0.6 0.4 0.2 0 Stability Factor (K)
500 West Renner Road Richardson, Texas 75080
Semiconductors for Communications, Space and Military www.TriQuint.com
Page 3 of 6; 9/24/02
Phone: 972-994-8200 Foundry: 972-994-4545 Email: info@triquint.com
Specifications are subject to change.
0.25-µm mmW pHEMT 2MI
Process Data Sheet
0.25-µm mmW pHEMT 2MI Power Tuned Load 600-µm FET @ 6 Volts, 30 GHz
30 40
Pout (dBm)
20
20
15 10 15
Pin (dBm)
10 20 25
0.25-µm mmW pHEMT 2MI Efficiency Tuned Load 600-µm FET @ 6 Volts, 30 GHz
30 40
Pout (dBm)
20
20
15 10 15 Pin (dBm)
500 West Renner Road Richardson, Texas 75080
10 20 25
PAE (%)
Phone: 972-994-8200 Foundry: 972-994-4545 Email: info@triquint.com
25
30
Semiconductors for Communications, Space and Military www.TriQuint.com
Page 4 of 6; 9/24/02
Specifications are subject to change.
PAE (%)
25
30
0.25-µm mmW pHEMT 2MI
Process Data Sheet
FET Models Available Gate Pitch (µm) Gate Fingers FET Sizes (µm) 12 18 4 100, 200 & 300 12 18 8 400 12 18 10 600 12 18 12 900 20 20 4 100, 200 & 300 20 20 8 400 20 20 10 600 20 20 12 900 25 40 12 1200 26 26 4 300 26 26 8 600
Application Examples
17 to 27 GHz High Power Amplifier TGA4502-EPU: This high-power amplifier is used primarily for K-band satellite communications and point-to-point radio. It has 29 dBm nominal output power at 1-dB gain compression and 37 dBm nominal output TOI. 28 to 31 GHz Ka Band High-Power Amplifier TGA4501-EPU: This power amp has 34.5 dBm nominal output power at 1-dB gain compression and 40 dBm typical output TOI. It is used in satellite ground terminals and point-to-point radios. 36 to 40 GHz 1 Watt Power Amplifier TGA1171-SCC: The Ka-band high-power amplifier is a two-stage power amplifier for point-to-point digital radio and point-to-multipoint systems. 26 to 35 GHz Medium Power Amplifier TGA1073A-SCC: This medium-power amplifier provides 25 dBm nominal output power at 1-dB gain compression across 26 to 35 GHz. Typical small-signal gain is 19 dB. The TGA1073A is designed to support a variety of millimeter wave applications including point-to-point digital radio and LMDS/LMCS.
500 West Renner Road Richardson, Texas 75080
Semiconductors for Communications, Space and Military www.TriQuint.com
Page 5 of 6; 9/24/02
Phone: 972-994-8200 Foundry: 972-994-4545 Email: info@triquint.com
Specifications are subject to change.
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