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Details, datasheet, quote on part number:0.25.mmW.3MI.pdf
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Datasheet text preview:
0.25-µm mmW pHEMT 3MI
Process Data Sheet
PROTECTIVE OVERCOAT 4.0 µm METAL 2 2.0 µm METAL 1 2000 Å NITRIDE 2 MIM METAL 500 Å NITRIDE 1 0.75 µm METAL 0 TaN RESISTOR 500 Å NITRIDE 0 T-GATE ACTIVE REGION OHMIC METAL (EXCEPT VIA) SEMI-INSULATING GaAs SUBSTRATE
Features
· · · · · · · · · · · · ·
0.25-µm amplifier transistors 0.25-µm switch transistors 0.25-µm, 2-µm and 4-µm diodes High-Q passives 3 MIM capacitance densities TaN resistors GaAs resistors High-density interconnects 3 metal layers Air bridges Substrate vias Protective overcoat Operation up to Vd = 7 V
Applications
VIA UNDER CAP
0.25-µm 3MI Process Cross Section
General Description
The 0.25-µm mmW pHEMT 3MI (3-Metal-Interconnect) process combines high power density and gain per stage performance. The process is optimized for high-power and low-noise operation through 50 GHz. Passives include 3 thick-metal interconnect layers, precision TaN resistors, GaAs resistors, through-substrate vias and 3 MIM capacitance densities. The via-under-cap process aids in size compaction and offers excellent grounds at higher frequencies. Air bridges produce minimal interconnect capacitance and the protective overcoat layer provides environmental robustness.
· · · · · · · · · · · · · · · · · ·
Up to 50 GHz Communications Military Power amplifiers Driver amplifiers Low-noise amplifiers AGC amplifiers Limiting amplifiers Transimpedance amplifiers Differential amplifiers Digital and analog phase shifters Digital and analog attenuators Mixers (up and down converters) Point-to-point radio Point-to-multipoint radio Switches Oscillators Multipliers
500 West Renner Road Richardson, Texas 75080
Semiconductors for Communications, Space and Military www.TriQuint.com
Page 1 of 6; 9/24/02
Phone: 972-994-8200 Foundry: 972-994-4545 Email: info@triquint.com
Specifications are subject to change.
0.25-µm mmW pHEMT 3MI
Process Data Sheet
0.25-µm mmW pHEMT 3MI Process Details Element Parameter Typical Value Units FETs Idss 285 mA/mm Imax Gm Vbd Vp Ft (peak) MIM capacitors density 510 375 -17 -1 55 240 300 1200 yes 50 160 yes 100 mA/mm mS/mm V V GHz pF/mm
2 2
pF/mm 2 pF/mm V/sq V/sq µm
Capacitors over vias TaN resistors sheet resistance GaAs resistors sheet resistance Vias Substrate thickness
0.25-µm mmW 3MI pHEMT DC Characteristics 200-µm FET
0.12 0.10 0.08 Ids (A) 0.06 0.04 0.02 0.00 0 2 4 6 Vds (V) 8 10 12 Vgs = 0.7 V Vgs = 0.3 V Vgs = 0 V Vgs = -0.3 V Vgs = -0.7 V Vgs = -0.9 V
500 West Renner Road Richardson, Texas 75080
Semiconductors for Communications, Space and Military www.TriQuint.com
Page 2 of 6; 9/24/02
Phone: 972-994-8200 Foundry: 972-994-4545 Email: info@triquint.com
Specifications are subject to change.
0.25-µm mmW pHEMT 3MI
Process Data Sheet
0.25-µm mmW pHEMT 3MI Minimum Noise Figure 200-µm FET @ 3 Volts, 15 mA
3.0 2.5 NFmin (dB) 2.0 1.5 1.0 0.5 0.0 0 10 20 30 Frequency (GHz) 40 50
0.25-µm mmW pHEMT 3MI Maximum Available Gain/Stable Gain (MAG/MSG) 600-µm FET @ 6 Volts, 60 mA
25 20 MAG/MSG (dB) 15 10 5 0 0 10 20 30 Frequency (GHz) 40 50 1.4 1.2 1 0.8 0.6 0.4 0.2 0 Stability Factor (K)
500 West Renner Road Richardson, Texas 75080
Semiconductors for Communications, Space and Military www.TriQuint.com
Page 3 of 6; 9/24/02
Phone: 972-994-8200 Foundry: 972-994-4545 Email: info@triquint.com
Specifications are subject to change.
0.25-µm mmW pHEMT 3MI
Process Data Sheet
0.25-µm mmW pHEMT 3MI Power Tuned Load 600-µm FET @ 6 Volts, 30 GHz
30 40
Pout (dBm)
20
20
15
10
10
15
Pin (dBm)
20
25
0.25-µm mmW pHEMT 3MI Efficiency Tuned Load 600-µm FET @ 6 Volts, 30 GHz
30 40
Pout (dBm)
20
20
15 10 15 Pin (dBm)
500 West Renner Road Richardson, Texas 75080
10 20 25
PAE (%)
Phone: 972-994-8200 Foundry: 972-994-4545 Email: info@triquint.com
25
30
Semiconductors for Communications, Space and Military www.TriQuint.com
Page 4 of 6; 9/24/02
Specifications are subject to change.
PAE (%)
25
30
0.25-µm mmW pHEMT 3MI
Process Data Sheet
FET Models Available Gate Pitch (µm) Gate Fingers FET Sizes (µm) 07 07 4 100, 200 & 300 07 07 8 200, 400 & 600 12 18 4 100, 200 & 300 12 18 8 200, 400 & 600 12 18 10 600 20 20 4 100, 200 & 300 20 20 8 400 & 600 20 20 10 600 & 900 20 20 12 900 26 26 4 300 26 26 8 600
Application Examples
0.2 to 18 GHz Down Converter TGC1452-EPU: The TriQuint TGC1452-EPU is a double-balanced MMIC mixer which supports a variety of communication system applications including satellite systems and point-to-point radio. 20 to 40 GHz X2 Frequency Multiplier TGC1430F-EPU: Input frequencies range from 10 to 20 GHz with 25 dB fundamental isolation. The conversion loss is 12 ± 2 dB with 18 dBm of input drive power. This multiplier is used primarily for point-to-point radio and point-to-multipoint communications. 29 to 37 GHz Compact Driver Amplifier TGA4510-EPU: The greater than 16 dB nominal small-signal gain at 30 GHz and 16 dBm nominal Psat are a key features of this driver amplifier. Applications include LMDS, point-to-point and base stations.
500 West Renner Road Richardson, Texas 75080
Semiconductors for Communications, Space and Military www.TriQuint.com
Page 5 of 6; 9/24/02
Phone: 972-994-8200 Foundry: 972-994-4545 Email: info@triquint.com
Specifications are subject to change.
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