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Details, datasheet, quote on part number:0.25.XKu.3MI.pdf
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Datasheet text preview:
0.25-µm XKu pHEMT 3MI
Process Data Sheet
PROTECTIVE OVERCOAT 4.0 µm METAL 2 2.0 µm METAL 1 2000 Å NITRIDE 2 MIM METAL 500 Å NITRIDE 1 0.75 µm METAL 0 TaN RESISTOR 500 Å NITRIDE 0 T-GATE ACTIVE REGION OHMIC METAL (EXCEPT VIA) SEMI-INSULATING GaAs SUBSTRATE
Features
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0.25-µm amplifier transistors 0.25-µm switch transistors 0.25-µm, 2-µm and 4-µm diodes High-Q passives 3 MIM capacitance densities TaN resistors GaAs resistors High-density interconnects 3 metal layers Air bridges Substrate vias Protective overcoat Operation up to Vd = 9 V
Applications
VIA UNDER CAP
0.25-µm 3MI Process Cross Section
General Description
The 0.25-µm XKu pHEMT 3MI (3-metal-interconnect) process utilizes T-gates in conjunction with a pHEMT material structure. This process is optimized for high-power applications through 20 GHz. The process demonstrates comparable power density and gain to the 0.25-µm mmW pHEMT 3MI process at X-band frequencies and similar bias conditions. However, the 0.25-µm XKu pHEMT offers a higher breakdown voltage allowing higher bias voltages to be applied to deliver higher power densities. Passives include 3 thick-metal interconnect layers, precision TaN resistors, GaAs resistors, through-substrate vias and 3 MIM capacitance densities. The via-under-cap process aids in size compaction and offers excellent grounds at higher frequencies. Air bridges produce minimal interconnect capacitance. The protective overcoat layer provides environmental robustness.
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Up to 20 GHz Communications Military Power amplifiers Driver amplifiers Low-noise amplifiers AGC amplifiers Limiting amplifiers Transimpedance amplifiers Differential amplifiers Digital and analog phase shifters Digital and analog attenuators Mixers (up and down converters) Multipliers Switches Oscillators
500 West Renner Road Richardson, Texas 75080
Semiconductors for Communications, Space and Military www.TriQuint.com
Page 1 of 6; 9/24/02
Phone: 972-994-8200 Foundry: 972-994-4545 Email: info@triquint.com
Specifications are subject to change.
0.25-µm XKu pHEMT 3MI
Process Data Sheet
0.25-µm XKu pHEMT 3MI Process Details Element Parameter Typical Value Units FETs Idss 285 mA/mm Imax Gm Vbd Vp Ft (peak) MIM capacitors density 510 375 -21 -1 60 240 300 1200 yes 50 160 yes 100 mA/mm mS/mm V V GHz pF/mm
2 2
pF/mm 2 pF/mm V/sq V/sq µm
Capacitors over vias TaN resistors sheet resistance GaAs resistors sheet resistance Vias Substrate thickness
0.25-µm XKu pHEMT 3MI DC Characteristics 300-µm FET
0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0.00 0 5 Vds (V)
Phone: 972-994-8200 Foundry: 972-994-4545 Email: info@triquint.com
Vgs = 0.7 V Vgs = 0.3 V Vgs = 0 V Vgs = -0.3 V Vgs = -0.7 V Vgs = -0.9 V
Ids (A)
10
15
500 West Renner Road Richardson, Texas 75080
Semiconductors for Communications, Space and Military www.TriQuint.com
Page 2 of 6; 9/24/02
Specifications are subject to change.
0.25-µm XKu pHEMT 3MI
Process Data Sheet
0.25-µm XKu pHEMT 3MI Minimum Noise Figure 1000-µm FET @ 3 Volts, 75 mA
3.5 3.0 NFmin (dB) 2.5 2.0 1.5 1.0 0.5 0.0 0 5 10 15 Frequency (GHz) 20 25 30
0.25-µm XKu pHEMT 3MI Maximum Available Gain/Stable Gain (MAG/MSG) 1000-µm FET @ 9 Volts, 75 mA
25 20 MAG/MSG (dB) 15 10 5 0 0 10 Frequency (GHz) 20 30 1.4 1.2 1 0.8 0.6 0.4 0.2 0 Stability Factor (K)
500 West Renner Road Richardson, Texas 75080
Semiconductors for Communications, Space and Military www.TriQuint.com
Page 3 of 6; 9/24/02
Phone: 972-994-8200 Foundry: 972-994-4545 Email: info@triquint.com
Specifications are subject to change.
0.25-µm XKu pHEMT 3MI
Process Data Sheet
0.25-µm XKu pHEMT 3MI Power Tuned Load 1000-µm FET @ 9 Volts, 10 GHz
35 30 Pout (dBm) 25 20 15 10 15 Pin (dBm) 20 25 60 50 40 30 20 PAE (%)
0.25-µm XKu pHEMT 3MI Efficiency Tuned Load 1000-µm FET @ 9 Volts, 10 GHz
35 30 Pout (dBm) 25 20 15 10 15 Pin (dBm)
500 West Renner Road Richardson, Texas 75080
60 50 40 30 20 20 25 PAE (%)
Phone: 972-994-8200 Foundry: 972-994-4545 Email: info@triquint.com
Semiconductors for Communications, Space and Military www.TriQuint.com
Page 4 of 6; 9/24/02
Specifications are subject to change.
0.25-µm XKu pHEMT 3MI
Process Data Sheet
FET Models Available Gate Pitch (µm) Gate Fingers FET Sizes (µm) 12 18 10 600 26 26 4 300 26 26 8 640 & 800 26 26 10 1000 & 1200 26 26 12 1440 32 32 8 800 32 32 10 1000 32 32 12 960, 1440 & 1800
500 West Renner Road Richardson, Texas 75080
Semiconductors for Communications, Space and Military www.TriQuint.com
Page 5 of 6; 9/24/02
Phone: 972-994-8200 Foundry: 972-994-4545 Email: info@triquint.com
Specifications are subject to change.
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