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Part: 2N3055H
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
-> NPN
Description: ic (mA) = 15 ;; VCBO(V) = 100 ;; VCEO(V) = 100
Company: Usha
Datasheet: Download 2N3055H datasheet File size : 172 kB
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Datasheet text preview:
Silicon Power Transistor
2N3055H
Technical Data
Typical Applications : These devices are designed for general purpose switching and amplifier applications. Specification Fetaures : F Complementary NPN Silicon Power Transistor F 15 Amp / 100 V device in TO-204AA [ TO-3 ] package F 115 Watts device F Excellent safe operating area
Symbol
Maximum Ratings :
V CEO V CER V CB V EB IC IB
Parameters / Conditions
Ratings
Collector- Emitter Voltage Collector- Emitter Voltage Collector - Base Voltage Emitter Base Voltage Collector Current Continuos Base Current
100 Vdc 70 Vdc 100 Vdc 7 Vdc 15 Adc 7 Adc
Thermal Characteristics :
R thjc PD Tj & T Stg Thermal resistance junction to case Total Power Dissipation @ Tc = 25 °C Derate above 25 °C Operating and Storage Junction Temperature Range 1.52 °C/W 115 Watta 0.657 W /°C -65 °C ....+ 200 °C
ELECTRICAL CHARACTERISTICS :
[ Tc = 25 °C unless otherwise noted ] Characteristic Symbol Min Typ Max Unit
Off Characteristics : [ Pulse Test : Pulse width = 300 µs , Duty Cycle 2 % ] Collector Emitter Sustaining Voltage [ Ic = 200 mAdc , IB = 0 ] Collector Emitter Sustaining Voltage [ Ic = 200 mAdc , RBE = 100 Ohms ] Collector Cutoff Current [ VCE = 30 Vdc , IB = 0 ] Collector Cutoff Current [ VCE = 100 Vdc , VBE(off) = 1.5 Vdc ] [ V CE = 100 V, VBE(off) = 1.5 Vdc , Tc = 150 °C ] Emitter Base Leakage [ VEB = 7 Vdc , Ic = 0 ] VCEX(sus) VCER(sus) ICEO ICEX 60 70 0.7 1 5 IEBO 5 mAdc Vdc Vdc mAdc mAdc
On Characteristics : [ Pulse Test : Pulse width = 300 µs , Duty Cycle 2 % ] DC Current Gain [ Ic = 4 Adc , VCE = 4 Vdc ] [ Ic = 10 Adc , VCE = 4 Vdc ] Collector-Emitter Saturation Voltage [ Ic = 4 Adc , IB = 400 mAdc ] [ Ic = 10 Adc , IB = 3.3 Adc ] Base-Emitter on Voltage [ Ic = 4 Adc , VCE = 4 Vdc ] hFE VCE(sat) 1.1 3 VBE(on) Vdc 1.5 20 5 70 Vdc
Dynamic Characteristics : Current Gain Bandwidth Product [ I C = 0.5 Adc , VCE = 10 Vdc , f = 1 MHz ] Small signal current gain [ I C = 1 Adc , VCE = 4 Vdc , f = 1 KHz ] Small signal current gain cutoff frequency [ I C = 1 Adc , VCE = 4 Vdc , f = 1 KHz ] Second Breakdown Characteristics : Second Breakdown Collector Current with Base Forward Biased t = 1 s [non-repetitive ] , VCE = 40 Vdc IS/b 2.87 Adc fT hfe fhfe 2.5 15 10 120 KHz MHz
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