Typical Applications : These devices are designed for high power audio , disk head positioners and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers to dc converters or inverters. Specification Fetaures : F Complementary NPN Silicon Power Transistor F 16 Amp 140 V device TO-3 ] package F 150 Watts device F High safe operating area ] F Completely characterized for linear operation F High DC current gain & low saturation voltage
V CEO V CEX V CBO V EBO I BM Collector- Emitter Voltage Collector- Emitter Voltage Collector - Base Voltage Emitter Base Voltage Collector Current Continuos Peak : Pulse width ms , Duty Cycle 10 % Base Current Continuos Peak : Pulse width ms , Duty Cycle % 140 Vdc 160 Vdc 160 Vdc 7 Vdc 16 Adc 30 Adc 4 Adc 15 Adc
R thjc & T Stg Thermal resistance junction to case Total Power Dissipation 25 °C Derate above 25 °C Operating and Storage Junction Temperature Range 1.17 °C/W 150 Watta 0.855 W /°C -65 °C....+ 200 °C
25 °C unless otherwise noted ] Characteristic Symbol Min Typ Max Unit
Dynamic Characteristics : Magnitude of Common Emitter small signal , short circuit , forward curremt transfer ratio = 1 Adc , f=50 KHz ] Small signal current gain Adc , VCE = 100 Vdc KHz ] Second Breakdown Characteristics : Second Breakdown Collector Current with Base Forward Biased [non-repetitive ] , VCE = 100 Vdc IS/b 1.5 Adc | hfe | 4
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