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Details, datasheet, quote on part number:UT61512JC-8
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| Part: | UT61512JC-8 |
| Category: | Memory => SRAM => Async. SRAM => High Speed |
| Description: | Org. = 64Kx8 ;; Voltage = 5V ;; Speed (ns) = 8/12/15 ;; Icc (Max) (mA) = 190/160/140 ;; Isb1(Max) (mA) = 5 ;; Package = 32SOJ, 32TSOP-I |
| Company: | Utron technology |
| Datasheet: | Download UT61512JC-8 datasheet File size : 89 kB |
| Request For quote: | Find where to buy UT61512JC-8
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Datasheet text preview:
UTRON
Rev 1.2
UT61512
64K X 8 BIT HIGH SPEED CMOS SRAM GENERAL DESCRIPTION
The UT61512 is a 524,288-bit high-speed CMOS static random access memory organized as 655,036 words by 8 bits. It is fabricated using high performance, high reliability CMOS technology. The UT61512 is designed for high-speed system applications. It is particularly suited for use in high-density high-speed system applications. The UT61512 operates from a single 5V power supply and all inputs and outputs are fully TTL compatible.
FEATURES
Fast access time : 8/12/15 ns (max.) Low operating power consumption : 100 mA (typical) Single 5V power supply All inputs and outputs TTL compatible Fully static operation Three state outputs Package : 32-pin 300 mil SOJ 32-pin 8x20mm TSOP-I
FUNCTIONAL BLOCK DIAGRAM
A15 A13 A14 A12 A7 A6 A5 A4 A8 I/O1 I/O8
CE1
ROW DECODER
. . . . . .
MEMORY ARRAY 512 ROWS X 1024 COLUMNS
PIN CONFIGURATION
VCC VSS
NC NC A14 A12 A7 A6 A5 A4 1 2 3 4 5 32 31 30 29 28 Vcc A15 CE2
WE
A13 A8 A9 A11 OE A10
UT61512
6 7 8 9 10 11 12 13 14 15 16
27 26 25 24 23 22 21 20 19 18 17
. . .
. . .
I/O CONTROL
. . .
COLUMN I/O COLUMN DECODER
A3 A2 A1
CE 2
WE
OE
LOGIC CONTROL
CE1
I/O8 I/O7 I/O6 I/O5 I/O4
A10 A11
A9 A3 A2 A1
A0
A0 I/O1 I/O2 I/O3 Vss
PIN DESCRIPTION
SYMBOL A0 - A15 I/O1 - I/O8 CE1 CE2
WE
SOJ
DESCRIPTION Address Inputs Data Inputs/Outputs Chip Enable 1 input Chip Enable 2 input Write Enable Input Output Enable Input Power Supply Ground No Connection
A11 A9 A8 A13
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
32 31 30 29 28 27 26
OE
A10
CE 1
I/O8 I/O7 I/O6 I/O5 I/O4 Vss I/O3 I/O2 I/O1 A0 A1 A2 A3
WE
CE2 A15 Vcc NC NC A14 A12 A7 A6 A5 A4
OE VCC VSS NC
UT61512
25 24 23 22 21 20 19 18 17
TSOP-I
_____________________________________________________________________________________________ UTRON TECHNOLOGY INC. P80021 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919
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UTRON
Rev 1.2
UT61512
64K X 8 BIT HIGH SPEED CMOS SRAM
ABSOLUTE MAXIMUM RATINGS*
PARAMETER Terminal Voltage with Respect to Vss Operating Temperature Storage Temperature Power Dissipation DC Output Current Soldering Temperature (under 10 sec) SYMBOL VTERM TA TSTG PD IOUT Tsolder RATING -0.5 to +6.5 0 to +70 -65 to +150 1 50 260 UNIT V ¢J ¢J W mA ¢J
*Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
TRUTH TABLE
MODE Standby Standby Output Disable Read Write
5s5u 1 H X L L L
CE2 X L H H H
5·5u X X H L X
55u X X H H L
I/O OPERATION High - Z High -Z High - Z DOUT DIN
SUPPLY CURRENT ISB,ISB1 ISB,ISB1 ICC ICC ICC
Note: H = VIH, L=VIL, X = Don't care.
DC ELECTRICAL CHARACTERISTICS (VCC = 5.0V¡Ó
PARAMETER Input High Voltage Input Low Voltage Input Leakage Current Output Leakage Current SYMBOL VIH VIL ILI ILO TEST CONDITION
10%, TA = 0¢J to 70¢J )
MIN. 2.2 - 0.5 -1 -1 MAX. UNIT VCC+0.5 V 0.8 V 1 µA 1 µA
VSS ¡Ø VSS ¡Ø
VIN ¡Ø
VCC
Output High Voltage Output Low Voltage Operating Power Supply Current Standby Power Supply Current
VOH VOL ICC
VI/O ¡Ø VCC CE1 = VIH or CE2 = VIL or OE = VIH or WE = VIL IOH = - 4mA IOL = 8mA -8 CE1 = VIL , CE2 = VIH II/O = 0mA , Cycle=Min. - 12 - 15 CE1 = VIH or CE2 = VIL CE1 ¡Ù VCC-0.2V or
2.4 -
0.4 190 160 140 30 5
V V mA mA mA mA mA
ISB ISB1
CE2¡Ø 0.2V Notes: 1. Overshoot : Vcc+2.0v for pulse width less than 6ns. 2. Undershoot : Vss-2.0v for pulse width less than 6ns. 3. Overshoot and Undershoot are sampled, not 100% tested.
_____________________________________________________________________________________________ UTRON TECHNOLOGY INC. P80021 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919
2
UTRON
Rev 1.2
UT61512
64K X 8 BIT HIGH SPEED CMOS RAM
CAPACITANCE (TA=25¢J , f=1.0MHz)
PARAMETER Input Capacitance Input/Output Capacitance SYMBOL CIN CI/O MIN.
-
MAX. 8 10
UNIT pF pF
Note : These parameters are guaranteed by device characterization, but not production tested.
AC TEST CONDITIONS
Input Pulse Levels Input Rise and Fall Times Input and Output Timing Reference Levels Output Load 0V to 3.0V 3ns 1.5V CL=30pF, IOH/IOL=-4mA/8mA
AC ELECTRICAL CHARACTERISTICS (VCC = 5V¡Ó
(1) READ CYCLE PARAMETER Read Cycle Time Address Access Time Chip Enable Access Time Output Enable Access Time Chip Enable to Output in Low Z Output Enable to Output in Low Z Chip Disable to Output in High Z Output Disable to Output in High Z Output Hold from Address Change (2) WRITE CYCLE PARAMETER Write Cycle Time Address Valid to End of Write Chip Enable to End of Write Address Set-up Time Write Pulse Width Write Recovery Time Data to Write Time Overlap Data Hold from End of Write Time Output Active from End of Write Write to Output in High Z SYMBOL UT61512-8
MIN. MAX.
10% , TA = 0¢J to 70¢J )
UT61512-12 UT61512-15 UNIT
MIN. MAX. MIN. MAX.
tRC tAA tACE tOE tCLZ* tOLZ* tCHZ* tOHZ* tOH
8 2 0 3
8 8 4 4 4 -
12 3 0 3
12 12 6 6 6 -
15 4 0 3
15 15 7 7 7 -
ns ns ns ns ns ns ns ns ns
SYMBOL UT61512-8
MIN. MAX.
UT61512-12 UT61512-15 UNIT
MIN. MAX. MIN. MAX.
tWC tAW tCW tAS tWP tWR tDW tDH tOW* tWHZ*
8 6.5 6.5 0 6.5 0 4 0 1.5
-
4
12 10 10 0 9 0 6 0 3 -
6
15 12 12 0 10 0 7 0 4 -
7
ns ns ns ns ns ns ns ns ns ns
*These parameters are guaranteed by device characterization, but not production tested.
_____________________________________________________________________________________________ UTRON TECHNOLOGY INC. P80021 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919
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