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Details, datasheet, quote on part number:UT6164C
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| Part: | UT6164C |
| Category: | Memory => SRAM => Async. SRAM => High Speed |
| Description: | Org. = 8Kx8 ;; Voltage = 5V ;; Speed (ns) = 10/12/15 ;; Icc (Max) (mA) = 180/160/140 ;; Isb1(Max) (mA) = 5 ;; Package = 28SOJ, 28STSOP |
| Company: | Utron technology |
| Datasheet: | Download UT6164C datasheet File size : 87 kB |
| Request For quote: | Find where to buy UT6164C
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Datasheet text preview:
UTRON
Rev. 1.1
UT6164C
8K X 8 BIT HIGH SPEED CMOS SRAM
REVISION HISTORY
REVISION Rev. 1.0 Rev. 1.1 DESCRIPTION Original 1. Revised Page 8 : 28 STSOP DIMENSION : a. Db D, b. D HD DATE Oct 15,2001 Jan 20,2003
UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919
P80074
1
UTRON
Rev. 1.1
UT6164C
8K X 8 BIT HIGH SPEED CMOS SRAM GENERAL DESCRIPTION
The UT6164C is a 65,536-bit high-speed CMOS static random access memory organized as 8,192 words by 8 bits. It is fabricated using high performance, high reliability CMOS technology. The UT6164C is designed for high-speed system applications. It is particularly suited for use in high-density high-speed system applications. The UT6164C operates from a single 5V power supply and all inputs and outputs are fully TTL compatible.
FEATURES
Fast access time : 10/12/15 ns (max.) Low operating power consumption : 80 mA (typical) Single 5V power supply All inputs and outputs TTL compatible Fully static operation Three state outputs Package : 28-pin 300 mil SOJ 28-pin 8mm×13.4mm STSOP
FUNCTIONAL BLOCK DIAGRAM
128 ¡Ñ 12 5 MEMORY ARRAY
PIN CONFIGURATION
NC A12 A7 A6 A5 1 2 3 4 28 27 26 25 Vcc
WE
A0-A12
DECODER
Vcc Vss
CE2 A8 A9 A11
OE
UT6164C
5 6 7 8 9 10 11 12 13 14
24 23 22 21 20 19 18 17 16 15
I/O1-I/O8
I/O DATA CIRCUIT
A4
COLUMN I/O
A3 A2 A1 A0 I/O1 I/O2
A10 CE1 I/O8 I/O7 I/O6 I/O5 I/O4
CE1 CE2 OE WE
I/O3
CONTROL CIRCUIT
Vss
SOJ
OE
A11 A9 A8 CE2
1 2 3 4 5 6 7 8 9 10 11 12 13 14
28 27 26 25 24 23 22 21 20 19 18 17 16 15
A10 CE1 I/O8 I/O7 I/O6 I/O5 I/O4 Vss I/O3 I/O2 I/O1 A0 A1 A2
PIN DESCRIPTION
SYMBOL A0 - A12 I/O1 - I/O8 C CE1 ¡B E2
WE OE VCC VSS
DESCRIPTION Address Inputs Data Inputs/Outputs Chip Enable Input Write Enable Input Output Enable Input Power Supply Ground
WE
Vcc NC A12 A7 A6 A5 A4 A3
UT6164C
STSOP
UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919
P80074
2
UTRON
Rev. 1.1
UT6164C
8K X 8 BIT HIGH SPEED CMOS SRAM
ABSOLUTE MAXIMUM RATINGS*
PARAMETER Terminal Voltage with Respect to Vss Operating Temperature Storage Temperature Power Dissipation DC Output Current Soldering Temperature (under 10 sec) SYMBOL VTERM TA TSTG PD IOUT Tsolder RATING -0.5 to +6.5 0 to +70 -65 to +150 1 50 260 UNIT V ¢J ¢J W mA ¢J
*Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
TRUTH TABLE
MODE Standby Standby Output Disable Read Write
CE1 H X L L L
CE2 X L H H H
OE X X H L X
WE X X H H L
I/O OPERATION High - Z High - Z High - Z DOUT DIN
SUPPLY CURRENT ISB,ISB1 ISB,ISB1 ICC ICC ICC
Note: H = VIH, L=VIL, X = Don't care.
1 ) DC ELECTRICAL CHARACTERISTICS (VCC = 5V¡Ó 0%, TA = 0¢J to 70¢J
PARAMETER Input High Voltage Input Low Voltage Input Leakage Current Output Leakage Current SYMBOL TEST CONDITION VIH VIL ILI VSS ¡Ø VIN ¡Ø VCC ILO VSS ¡Ø VI/O ¡Ø VCC CE1 =VIH or CE2=VIL or OE =VIH or WE =VIL IOH = - 4mA IOL = 8mA Cycle time=Min. CE1 = VIL , CE2= VIH II/O = 0mA CE1 = VIH or CE2= VIL MIN. 2.2 - 0.5 -1 -1 MAX. VCC+0.5 0.8 1 1 UNIT V V µA µA
Output High Voltage Output Low Voltage Operating Power Supply Current Standby Current (TTL)
VOH VOL ICC ISB
- 10 - 12 - 15
2.4 -
0.4 180 160 140 30 5
V V mA mA mA mA mA
Standby Current (CMOS) ISB1
CE1 ¡Ù VCC-0.2V or CE2¡Ø 0.2V
Notes: 1. Overshoot : Vcc+2.0v for pulse width less than 8ns. 2. Undershoot : Vss-2.0v for pulse width less than 8ns. 3. Overshoot and Undershoot are sampled, not 100% tested.
UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919
P80074
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