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Details, datasheet, quote on part number:UT621024LSL-70LE
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Datasheet text preview:
UTRON
Rev. 1.1 REVISION HISTORY REVISION Rev. 0.9 Rev. 1.0
UT621024(E)
128K X 8 BIT LOW POWER CMOS SRAM
Rev. 1.1
DESCRIPTION Original. 1. The Operating Temperature is revised from Industrial temperature to Extended temperature¡G20¢J 80¢J ~ 2. The symbols CE1#,OE# and WE# are revised as CE1 , OE and WE Add order information for lead free product
DATE Jan.2001 Jun 18,2001
May 15,2003
UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919
P80037
1
UTRON
Rev. 1.1
UT621024(E)
128K X 8 BIT LOW POWER CMOS SRAM
GENERAL DESCRIPTION
The UT621024(E) is a 1,048,576-bit low power CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using high performance, high reliability CMOS technology. The UT621024(E) is designed for low power application. It is particularly well suited for battery back-up nonvolatile memory application. The UT621024(E) operates from a single 5V power supply and all inputs and outputs are fully TTL compatible.
FEATURES
Access time : 35/55/70ns (max.) Low power consumption : Operating : 60/50/40 mA (typical) Standby : 2µA (typical) L-version 1µA (typical) LL-version Single 5V power supply All inputs and outputs TTL compatible Fully static operation Three state outputs Data retention voltage : 2V (min.) OperatingTemperature : Extended : -20¢J 80¢J ~ Package : 32-pin 600 mil PDIP 32-pin 450 mil SOP 32-pin 8mmx20mm TSOP-1 32-pin 8mmx13.4mm STSOP
PIN CONFIGURATION
NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 Vcc A15 CE2
WE
FUNCTIONAL BLOCK DIAGRAM
1024 X 1024 ME MO RY AR RAY
A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O1 I/O2 I/O3 Vss
UT621024(E)
A13 A8 A9 A11
OE
A0-A16
DECODER
Vcc Vss
A10
CE
I/O8 I/O7 I/O6 I/O5 I/O4
I/O1-I/O8
I/O DATA C I RC U I T
COLUMN I/O
PDIP / SOP
A 11 A9 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26
OE
A 10
CE C E2
OE
A8
CE
I /O 8 I /O 7 I /O 6 I /O 5 I /O 4 V ss I /O 3 I /O 2 I /O 1 A0 A1 A2 A3
C O NT RO L C I RC U I T
A 13
WE
WE
CE2 A 15
PIN DESCRIPTION
SYMBOL A0 - A16 I/O1 - I/O8 CE ,CE2 55u 5·5u VCC VSS NC DESCRIPTION Address Inputs Data Inputs/Outputs Chip enable 1,2 Inputs Write Enable Input Output Enable Input Power Supply Ground No Connection
V cc NC A 16 A 14 A 12 A7 A6 A5 A4
U T 6 2 1 0 2 4 (E )
25 24 23 22 21 20 19 18 17
TSOP-I/STSOP
UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919
P80037
2
UTRON
Rev. 1.1
UT621024(E)
128K X 8 BIT LOW POWER CMOS SRAM
SYMBOL VTERM TA TSTG PD IOUT Tsolder RATING -0.5 to +7.0 -20 to +80 -65 to +150 1 50 260 UNIT V ¢J ¢J W mA ¢J
ABSOLUTE MAXIMUM RATINGS*
PARAMETER Terminal Voltage with Respect to Vss Operating Temperature Extended Storage Temperature Power Dissipation DC Output Current Soldering Temperature (under 10 sec)
*Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
TRUTH TABLE
MODE Standby Standby Output Disable Read Write
CE H X L L L
CE2 X L H H H
5·5u X X H L X
55u X X H H L
I/O OPERATION High - Z High -Z High - Z DOUT DIN
SUPPLY CURRENT ISB,ISB1 ISB,ISB1 ICC ICC ICC
Note: H = VIH, L=VIL, X = Don't care.
) DC ELECTRICAL CHARACTERISTICS (VCC = 5V¡Ó 10%, TA = -20¢J to 80¢J
PARAMETER SYMBOL TEST CONDITION *1 Input High Voltage VIH *2 Input Low Voltage VIL Input Leakage Current IIL VSS ¡Ø VIN ¡Ø VCC Output Leakage Current IOL VSS ¡Ø VI/O¡Ø VCC CE =VIH or CE2 = VIL or Output High Voltage Output Low Voltage Average Operating Power Supply Courrent VOH VOL ICC = = 5·5u VIH or 55u VIL IOH = - 1mA IOL= 4mA Min.Cycle, 100% Duty, CE =VIL, CE2 = VIH, II/O = 0mA Cycle time = 1µs, 100% Duty, . CE ¡Ø 0.2V,CE2¡Ù VCC-0.2V, II/O = 0Ma CE =VIH or CE2 = VIL CE ¡Ù VCC-0.2V or .CE2¡Ø 0.2V -L - LL
Notes: 1. Overshoot : Vcc+2.0v for pulse width less than 10ns. 2. Undershoot : Vss-2.0v for pulse width less than 10ns. 3. Overshoot and Undershoot are sampled, not 100% tested. 4. Those parameters are for reference only under 50
MIN. 2.2 - 0.5 -1 -1 2.4 -35 -55 -70 -
TYP. 60 50 40 2 1
MAX. VCC+0.5 0.8 1 1 0.4 100 85 70 10 3 200 4 40* 100 4 15*
UNIT V V µA µA V V mA mA mA mA mA µA µA
ICC1
Standby Power Supply Current
ISB ISB1
UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919
P80037
3
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