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Details, datasheet, quote on part number:UT62L12816BS-70LI
 
 
Part:UT62L12816BS-70LI
Category:Memory => SRAM => Async. SRAM => Low Speed & Low Power
Description:
Company:Utron technology
Datasheet:Download UT62L12816BS-70LI datasheet   File size : 119 kB
Request For quote:  Find where to buy UT62L12816BS-70LI
 



Datasheet text preview:
UTRON
Rev. 1.1
128K X 16 BIT LOW POWER CMOS SRAM
UT62L12816(I)
REVISION HISTORY
REVISION Preliminary Rev. 0.5 Preliminary Rev. 0.6 DESCRIPTION Original. 1. The symbols CE# and OE# and WE# are revised as. CE and OE and WE . 2. Separate Industrial and Consumer SPEC. 3. Add access time 55ns range. 1. Revised Vcc rangeĦG aĦB 55ns (max.) for Vcc=2.7V~3.6V bĦB 70/100ns (max.) for Vcc=2.5V~3.6V 2. Revised block diagram 3. Revised DC ELECTRICAL CHARACTERISTICSĦG cĦB Revised standby current ISB1=20/3uA(max.) for TA=0˘J ~50˘J ISB2=80/10uA(max.) for TA=-40˘J ~85˘J dĦB Revised Icc=35/30/25mA(max.) 4. Revised AC ELECTRICAL CHARACTERISTICSĦG eĦB Revised symbol name tHZB as tBHZ fĦB Revised symbol name tLZB as tBLZ gĦB Revised symbol name tPWB as tBW 5. Revised waveforms 6. Revised IDR=50/5uA(max.) 1. Revised DC ELECTRICAL CHARACTERISTICSĦG aĦB Revised VIH as 2.2V 2. Revised AC ELECTRICAL CHARACTERISTICSĦG bĦB Revised tBLZ as 10ns (min.) 3. Revised 48-pin TFBGA package outline dimensionĦG cĦB Rev. 0.7ĦG ball diameter=0.3mm dĦB Rev. 1.0ĦG ball diameter=0.35mm Add order information for lead free product DATE Mar, 2001 Jun 21,2001
Preliminary Rev. 0.7
Nov 6, 2001
Rev. 1.0
Apr 23,2002
Rev. 1.1
May 09,2003
UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919
P80049
1
UTRON
Rev. 1.1
128K X 16 BIT LOW POWER CMOS SRAM GENERAL DESCRIPTION
UT62L12816(I)
FEATURES
Fast access time : 55ns (max.) for Vcc=2.7V~3.6V 70/100ns (max.) for Vcc=2.5V~3.6V CMOS low power operating Operating current : 35/30/25mA (Icc max.) Standby current : 20uA(max.) L­version,0˘JĦĜ TAĦĜ 50˘J 3uA(max.) LL-version,0˘JĦĜ TAĦĜ 50˘J Single 2.5V~3.6V power supply Operating temperature: Industrial : -40˘J ~85˘J All TTL compatible inputs and outputs Fully static operation Three state outputs Data retention voltage : 1.5V (min.) Data byte control : LB (I/O1~I/O8) UB (I/O9~I/O16) Package : 44-pin 400mil TSOP-˘ş 48-pin 6mm × 8mm TFBGA
The UT62L12816(I) is a 2,097,152-bit low power CMOS static random access memory organized as 131,072 words by 16 bits. The UT62L12816(I) operates from a wide range of 2.5V~ 3.6V supply voltage and all inputs and outputs are fully TTL compatible. The UT62L12816(I) is designed for low power system applications.
FUNCTIONAL BLOCK DIAGRAM
128KĦÑ 16 MEMORY ARRAY
A0-A16
DECODER
Vcc Vss I/O1-I/O8 Lower Byte I/O9-I/O16 Upper Byte
I/O DATA CIRCUIT
COLUMN I/O
CE OE WE LB UB
CONTROL CIRCUIT
UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919
P80049
2
UTRON
Rev. 1.1
128K X 16 BIT LOW POWER CMOS SRAM
UT62L12816(I)
PIN CONFIGURATION
A4 A3 A2 A1 A0 CE I/O1 I/O2 I/O3 I/O4 Vcc Vss I/O5 I/O6 I/O7 I/O8 WE A16 A15 A14 A13 A12 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A5 A6 A7 OE UB LB I/O16 I/O15 I/O14 I/O13 Vss Vcc I/O12 I/O11 I/O10 I/O9 NC A8 A9 A10 A11 NC
A B C D E F G H
LB I/O9 I/O10 Vss Vcc I/O15 I/O16 NC
OE UB I/O11 I/O12 I/O13 I/O14 NC A8
A0 A3 A5 NC NC A14 A12 A9
A1 A4 A6 A7 A16 A15 A13 A10
A2 CE I/O2 I/O4 I/O5 I/O6 WE A11
NC I/O1 I/O3 Vcc Vss I/O7 I/O8 NC
1
2
3
4
5
6
TSOP II
TFBGA
PIN DESCRIPTION
SYMBOL A0 - A16 I/O1 - I/O16 CE
WE OE LB UB VCC VSS NC
DESCRIPTION Address Inputs Data Inputs/Outputs Chip Enable Input Write Enable Input Output Enable Input Lower Byte Control Upper Byte Control Power Supply Ground No Connection
TRUTH TABLE
MODE Standby Output Disable Read Write
Note:
CE
OE X X H H L L L X X X
WE
LB
UB X H X L H L L H L L
H X L L L L L L L L
X X H H H H H L L L
X H L X L H L L H L
I/O OPERATION I/O1-I/O8 I/O9-I/O16 High ­ Z High ­ Z High ­ Z High ­ Z High ­ Z High ­ Z High ­ Z High ­ Z DOUT High ­ Z High ­ Z DOUT DOUT DOUT DIN High ­ Z High ­ Z DIN DIN DIN
SUPPLY CURRENT ISB, ISB1, ISB2 ICC,ICC1,ICC2 ICC,ICC1,ICC2 ICC,ICC1,ICC2
H = VIH, L=VIL, X = Don't care.
UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919
P80049
3