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Part: UT62L2568LCL-55LL

Category:
 Memory
   -> SRAM
     -> Async. SRAM
             -> Low Speed & Low Power

Description: Org. = 256Kx8 ;; Temp. ( J) = 0~70 ;; Voltage = 2.5~3.6V ;; Speed (ns) = 55/70/100 ;; Icc(Max) (mA) = 35/30/25 ;; Isb1(Max) (uA) = 80/20 ;; Package = 32TSOP-I, 32STSOP, 36TFBGA, Die

Company: Utron technology

Datasheet: Download UT62L2568LCL-55LL datasheet     File size : 144 kB

Request For quote: Find where to buy UT62L2568LCL-55LL



Datasheet text preview:
UTRON
Rev. 1.1
256K X 8 BIT LOW POWER CMOS SRAM
UT62L2568
REVISION HISTORY
REVISION DESCRIPTION Preliminary Rev. 0.1 Original. Rev. 1.0 1. Revised Power supply aĦB 55ns (max.) for Vcc=2.7V~3.6V bĦB 70/100ns (max.) for Vcc=2.5V~3.6V 2. Revised DC ELECTRICAL CHARACTERISTICSĦG aĦB Revised VIH as 2.2V bĦB Revised standby current ISB1 of LL-version Typical : 3uA 2uA Maximum : 25uA 20uA 3. Revised AC ELECTRICAL CHARACTERISTICSĦG aĦB Revised tOH as 10ns (min.) 4. Revised 36-pin TFBGA package outline dimensionĦG aĦB Rev. 0.1 ball diameter=0.3mm bĦB Rev. 1.0 ball diameter=0.35mm Rev. 1.1 1.Revised "FEATURES" Operating current : 40/35/25mA(ICC max) 20/18/15mA (ICC typ.) 2.TRUTH TABLE & DC ELECTRICAL : Delete ISB2 3.Revised VTERM : -0.5 to Vcc+0.3V -0.5 to 4.6V 4.Added VOH : 2.7V at Vcc=3.0V 5.Revised DC (ICC max) 45/35/25mA 35/30/25mA (ICC typ.) 30/25/20mA 20/18/15mA 6.Add under/overshoot range of VIL & VIH 7.Revised AC tOHZ*@100ns (max): 35ns 30ns tWHZ*(max) :30/30/40 20/25/30ns 8.Revised "Data retention Characteristics" : IDR-LL (Typ.) : NA 1uA, IDR-L (Typ.) : NA 10uA IDR-LL (Max.) : 25uA 6uA tR(min) : 5ns "tRC" 9.Add order information for lead free product Release Date Jun 18, 2001 Jul 30, 2002
Apr 28, 2003
UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919
P80059
1
UTRON
Rev. 1.1
256K X 8 BIT LOW POWER CMOS SRAM GENERAL DESCRIPTION
UT62L2568
FEATURES
Fast access time : 55ns(max.) for Vcc=2.7V~3.6V 70/100ns(max.) for Vcc=2.5V~3.6V CMOS low power operation Operating : 20/18/15mA (TYP.) Standby : 20 uA(TYP.) L -version 2 uA(TYP.) LL-version Single 2.5V~3.6V power supply Operating temperature: Commercial : 0˘J ~70˘J Extended : -20˘J ~80˘J All TTL compatible inputs and outputs Fully static operation Three state outputs Data retention voltage: 1.5V (min) Package : 32-pin 8mm x 20mm TSOP-˘ı 32-pin 8mm x 13.4mm STSOP 36-pin 6mm × 8mm TFBGA
The UT62L2568 is a 2,097,152-bit low power CMOS static random access memory organized as 262,144 words by 8 bits. It is fabricated using high performance, high reliability CMOS technology. The UT62L2568 is designed for very low power system applications. It is particularly well suited for battery back-up nonvolatile memory applications. It operates from a wide range of 2.5V~ 3.6V supply voltage. Easy memory expansion is provided by using two chip enable input ( CE ,CE2). And all inputs and three-state outputs are fully TTL compatible.
FUNCTIONAL BLOCK DIAGRAM
2 5 6 K ĦÑ 8 MEMORY AR RAY
A 0 -A 1 7
DECODER
Vcc Vss
I / O 1 -I / O 8
I/O DATA C IR C U IT
C O L U M N I/O
CE CE2 OE WE
CO NTROL C IR C U IT
UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919
P80059
2
UTRON
Rev. 1.1
256K X 8 BIT LOW POWER CMOS SRAM
UT62L2568
32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17
PIN CONFIGURATION
A11 A9 A8 A13 WE CE2 A15 Vcc A17 A16 A14 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 A10
OE
CE
A B C D E F G H
A0 I/O 5 I/O 6 V ss V cc I/O 7 I/O 8 A9
A1 A2
CE2
WE
A3 A4 A5
A6 A7
A8 I/O 1 I/O 2 V cc V ss
NC
UT62L2568
NC
OE
A17 A16 A12 A15 A13
I/O 3 I/O 4 A14
CE A11
I/O8 I/O7 I/O6 I/O5 I/O4 Vss I/O3 I/O2 I/O1 A0 A1 A2 A3
A10
TSOP-1 / STSOP
1 2 3 4 5 6
TFBGA
PIN DESCRIPTION
SYMBOL A0 - A17 I/O1 - I/O8 CE ,CE2
WE OE VCC VSS NC
DESCRIPTION Address Inputs Data Inputs/Outputs Chip Enable Inputs Write Enable Input Output Enable Input Power Supply Ground No Connection
UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919
P80059
3


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