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Details, datasheet, quote on part number:UT62L5128LS-70LI
 
 
Part:UT62L5128LS-70LI
Category:Memory => SRAM => Async. SRAM => Low Speed & Low Power
Description:
Company:Utron technology
Datasheet:Download UT62L5128LS-70LI datasheet   File size : 126 kB
Request For quote:  Find where to buy UT62L5128LS-70LI
 



Datasheet text preview:
UTRON
Rev. 1.1
512K X 8 BIT LOW POWER CMOS SRAM
UT62L5128(I)
REVISION HISTORY
REVISION Preliminary Rev. 0.5 Preliminary Rev. 0.6 Preliminary Rev. 0.7 DESCRIPTION Original. 1. The symbols CE# and OE# and WE# are revised as. CE and OE and WE . 2. Separate Industrial and Consumer SPEC. 3. Add access time 55ns range. 1. Add SOP and STSOP package 1. Revised 36-pin TFBGA package outline dimensionĦG aĦB Rev. 0.7 : ball diameter=0.3mm bĦB Rev. 0.8 : ball diameter=0.35mm 1. Revised Fast access time : 55/70/100ns 55ns (max.) for Vcc=3.0V~3.6V 70/100ns (max.) for Vcc=2.7V~3.6V 2. Revised Output Disable to Output in High Z (tOHZ*) : 30 35ns 1. Revised Operation surrent : -Icc(max) 45/35/25mA 40/30/25mA -Icc(Typ) 30/25/20mA 30/20/16mA 2. Revised Standby current : 20/3uA 20/2uA 3. Revised VOH(Typ) : NA 2.7V 4. Add VIH(max)=VCC+2.0V for pulse width less than 10ns. VIL(min)=VSS-2.0V for pulse width less than 10ns. 5. Revised AC Table tOHZ* characteristics 6. Add order information for lead free product
2. Revised DC ELECTRICAL CHARACTERISTICSĦG aĦB Revised VIH as 2.2V
DATE Mar, 2001 Jun 21,2001 Dec 18,2001
Preliminary Rev. 0.8
Apr 30,2002
Rev. 1.0
Aug 30,2002
Rev. 1.1
May 06,2003
UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919
P80052
1
UTRON
Rev. 1.1
512K X 8 BIT LOW POWER CMOS SRAM GENERAL DESCRIPTION
The UT62L5128(I) is a 4,194,304-bit low power CMOS static random access memory organized as 524,288 words by 8 bits. It is fabricated using high performance, high reliability CMOS technology. The UT62L5128(I) operates from a wide range 2.7V~3.6V power supply and supports industrial operating temperature range. The UT62L5128(I) is designed for high density and low power memory applications. The device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 1.5V.
UT62L5128(I)
FEATURES
Fast access time : 55/70/100ns CMOS Low power operating Operating current : 40/30/25mA (Icc max.) Standby current : 20µA (typ.) L-version 2µA (typ.) LL-version Single 2.7V~3.6V power supply Industrial Temperature : -40˘J ~85˘J All TTL compatible inputs and outputs Fully static operation Three state outputs Data retention voltage : 1.5V (min) Package : 32-pin 450mil SOP 32-pin 8mm × 20mm TSOP-I 32-pin 8mm × 13.4mm STSOP 36-pin 6mm × 8mm TFBGA
FUNCTIONAL BLOCK DIAGRAM
512K ĦÑ 8 MEMORY ARRAY
A0-A18
DECODER
Vcc Vss
I/O1-I/O8
I/O DATA CIRCUIT
COLUMN I/O
CE OE WE
CONTROL CIRCUIT
UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919
P80052
2
UTRON
Rev. 1.1
512K X 8 BIT LOW POWER CMOS SRAM
UT62L5128(I)
PIN CONFIGURATION
A 18 A 16 A 14 A 12 A7 A6 A5 A4 A3 A2 A1 A0 I/O1 I/O2 I/O3 Vss 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 Vcc A 15 A 17 WE A 13 A8 A9 A 11 OE A 10 CE I/O8 I/O7 I/O6 I/O5 I/O4
A B C D E F G H
A0 I/O5 I/O6 Vss Vcc I/O7 I/O8 A9
A1 A2
NC WE NC
A3 A4 A5
A6 A7
A8 I/O1 I/O2 Vcc Vss
A17 OE CE
A18 A16 A12 A15 A13
I/O3 I/O4 A14
A10 A11
1
2
3
4
5
6
SOP
TFBGA
A11 A9 A8 A13 WE A17 A15 Vcc A18 A16 A14 A12 A7 A6 A5 A4
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 TSOP-1 / STSOP
32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17
A10 I/O8 I/O7 I/O6 I/O5 I/O4 Vss I/O3 I/O2 I/O1 A0 A1 A2 A3
OE
CE
PIN DESCRIPTION
SYMBOL A0 - A18 I/O1 - I/O8 CE
WE OE Vcc Vss NC
DESCRIPTION Address Inputs Data Inputs/Outputs Chip Enable Input Write Enable Input Output Enable Input Power Supply Ground No Connection
UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919
P80052
3