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Details, datasheet, quote on part number:UT65L1616BS-60LLE
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| Part: | UT65L1616BS-60LLE |
| Category: | Memory => SRAM => Low Power => Pseudo Low Power SRAM |
| Description: | Org. = 1Mx16 ;; Temp. ( J) = -40~85 ;; Voltage = 2.5~3.3V ;; Speed (ns) = 60/70 ;; Icc(Max) (mA) = 22 ;; Isb1(Max) (uA) = 50 ;; Package = 48TFBGA |
| Company: | Utron technology |
| Datasheet: | Download UT65L1616BS-60LLE datasheet File size : 180 kB |
| Request For quote: | Find where to buy UT65L1616BS-60LLE
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Datasheet text preview:
UTRON
Rev. 1.1
1M X 16 BITS LOW POWER PSEUDO SRAM
UT65L1616(E)/UT65L1616(I)
REVISION HISTORY
REVISION Rev. 1.0 Rev. 1.1 DESCRIPTION Original. Delete Partial refresh function Draft Date Apr 15, 2003 Aug 06,2003
UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919
P80080
1
UTRON
Rev. 1.1
1M X 16 BITS LOW POWER PSEUDO SRAM
GENERAL DESCRIPTION
UT65L1616(E)/UT65L1616(I)
FEATURES
Access time : 60/70ns (max.) Low operating power Operating current : 22mA (typ) Standby current : 50uA (typ) LL-version Power supply voltage : 2.5V~3.3V Operating temperature : Extended(E) : -25~80 Industrial(I) : -40~85 Low power modes Deep power Down: Isb < 10uA Three state output and TTL compatible Separated I/O power (Vccq) & Core Power (Vcc) Page mode operation by 8 words Data byte control : LB (I/O1~I/O8) UB (I/O9~I/O16) Package : 48-pin 6.0mm × 8.0mm TFBGA
The UT65L1616 is a 16,777,216-bit CMOS random access memory organized as 1048,576 words by 16 bits. It is fabricated using PSEUDO SRAM techniques, yields high-density and low power consumption device. The UT65L1616 is design for upper and low byte access by data byte control ( UB LB ).It has low power modes by using control pin ZZ .
PIN DESCRIPTION
SYMBOL A0 - A19 I/O1 - I/O16 CE
WE OE LB UB ZZ VCC Vccq VSS NC
DESCRIPTION Address Inputs Data Inputs/Outputs Chip enable Input Write Enable Input Output Enable Input Lower Byte Control Upper Byte Control Low Power Modes Core Power I/O power Ground No Connection
FUNCTIONAL BLOCK DIAGRAM
A0-A19 Vcc Vccq Vss I/O1-I/O8 Lower Byte I/O9-I/O16 Upper Byte DECODER 1M × 16 MEMORY ARRAY
I/O DATA CIRCUIT
COLUMN I/O
PIN CONFIGURATION
A
CE
LB I/O9
I/O10
OE UB
I/O11 I/O12 I/O13
A0 A3 A5 A17 Vss A14
A1 A4 A6 A7 A16 A15 A13 A10
A2 CE I/O2 I/O4 I/O5 I/O6 WE A11
ZZ I/O1 I/O3 Vcc Vss I/O7 I/O8
NC
OE WE LB UB
ZZ
B
CONTROL CIRCUIT
C D E F G H
Vss
Vccq
I/O15 I/O16
I/O14
A19 A12 A8 A9
A18
1
2
3
4
5
6
TFBGA
UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919
P80080
2
UTRON
Rev. 1.1
1M X 16 BITS LOW POWER PSEUDO SRAM
UT65L1616(E)/UT65L1616(I)
ABSOLUTE MAXIMUM RATINGS*
PARAMETER Voltage on any pin relative to VSS Voltage on Vcc supply relative to VSS Extended Operating Temperature Industrial Storage Temperature Power Dissipation SYMBOL VIN, VOUT VCC TA TA TSTG PD RATING -0.2 to Vcc+0.3 -0.2 to 4.2 -25 to 80 -40 to 85 -65 to 150 1.0 UNIT V V W
*Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
TRUTH TABLE
MODE Standby Output Disable Read
CE
OE X H H L L L X X X X
WE
LB
UB X X L H L L H L L X
ZZ
I/O OPERATION SUPPLY CURRENT I/O1-I/O8 I/O9-I/O16 High Z High Z DOUT High Z DOUT DIN High Z DIN High Z High Z High Z High Z DOUT DOUT High Z DIN DIN High Z ISB, ISB1 ICC,ICC1,ICC2 ICC,ICC1,ICC2 ICC,ICC1,ICC2 ISB0
H L L L L L L L L X
X H H H H H L L L X
X L X L H L L H L X
H H H H H H H H H L
Write Deep Power Down
Note:
H = VIH, L=VIL, X = Don't care.
UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919
P80080
3
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