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Details, datasheet, quote on part number:1N4151TR
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Datasheet text preview:
1N4151
Vishay Semiconductors
Fast Switching Diode
Features
D Silicon Epitaxial Planar Diode
Applications
94 9367
Extreme fast switches
Order Instruction
Type 1N4151 Type Differentiation VRRM = 75 V 75 Ordering Code 1N4151TAP 1N4151TR Remarks Ammopack Tape and Reel
Absolute Maximum Ratings
Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current Average forward current Power dissipation dissipation Junction temperature Storage temperature range Test Conditions Type Symbol VRRM VR IFSM IFRM IF IFAV PV PV Tj Tstg Value 75 50 2 500 300 150 440 500 175 65...+175 Unit V V A mA mA mA mW mW °C °C
tp=1ms
VR=0 l=4 mm, TL=45 °C l=4 mm, TL 25 °C
x
Maximum Thermal Resistance
Tj = 25_C Parameter Junction ambient Test Conditions l=4 mm, TL=constant Symbol RthJA Value 350 Unit K/W
Document Number 85523 Rev. 3, 12-Feb-01
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1N4151
Vishay Semiconductors Electrical Characteristics
Tj = 25_C Parameter Forward voltage Reverse current current Breakdown voltage Diode capacitance Reverse recovery time Test Conditions IF=50mA VR=50 V VR=50 V, Tj=150 °C IR=5mA VR=0, f=1MHz, VHF=50mV IF=IR=10mA, iR=1mA IF=10mA, VR=6V, iR=0.1xIR, RL=100 Type Symbol VF IR IR V(BR) CD trr trr Min Typ 0.88 14 Max 1 50 50 2 4 2 Unit V nA mA V pF ns ns
75
W
Characteristics (Tj = 25_C unless otherwise specified)
100 CD Diode Capacitance ( pF ) Scattering Limit I R Reverse Current ( A ) 10 3.0 2.5 2.0 1.5 1.0 0.5 0 0
94 9151
m
f = 1 MHz Tj = 25°C
1
0.1 VR = 50 V 0.01 40 80 120 160 200 Tj Junction Temperature ( °C )
0.1
94 9153
1
10
100
VR Reverse Voltage ( V )
Figure 1. Reverse Current vs. Junction Temperature
1000 IF Forward Current ( mA ) Tj = 100°C 100
Figure 3. Diode Capacitance vs. Reverse Voltage
10 Tj = 25°C
1
0.1 0
94 9152
0.4
0.8
1.2
1.6
2.0
VF Forward Voltage ( V )
Figure 2. Forward Current vs. Forward Voltage
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Document Number 85523 Rev. 3, 12-Feb-01
1N4151
Vishay Semiconductors Dimensions in mm
Cathode Identification 0.55 max.
technical drawings according to DIN specifications 94 9366
1.7 max.
Standard Glass Case 54 A 2 DIN 41880 JEDEC DO 35 Weight max. 0.3 g
26 min.
3.9 max.
26 min.
Document Number 85523 Rev. 3, 12-Feb-01
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1N4151
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
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Document Number 85523 Rev. 3, 12-Feb-01
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