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Details, datasheet, quote on part number:1N4151W
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Datasheet text preview:
1N4151W
Vishay Semiconductors
formerly General Semiconductor
Small-Signal Diode
SOD-123
.022 (0.55)
Cathode Band
Mounting Pad Layout
.152 (3.85) .140 (3.55) .112 (2.85) .100 (2.55)
Top View
Dimensions in inches and (millimeters)
0.094 (2.40)
0.055 (1.40) 0.055 (1.40)
.010 (0.25) min.
Features
· Silicon Epitaxial Planar Diode · Fast switching diode · This diode is also available in other case styles i n c l u d i n g the DO-35 case with the type designation 1N4151, and the MiniMELF case with the type designation LL4151.
.006 (0.15) max.
.004 (0.1) max.
.067 (1.70) .055 (1.40)
.053 (1.35) max.
Mechanical Data
Case: SOD-123 Plastic Case Weight: approx. 0.01g Marking Code: A5 Packaging Codes/Options: D3/10K per 13" reel (8mm tape), 30K/box D4/3K per 7" reel (8mm tape), 30K/box
Maximum Ratings and Thermal Characteristics
Parameter Reverse Voltage Peak Reverse Voltage Average Rectified Current Half Wave Rectification with Resistive Load at Tamb = 25°C and f 50Hz Surge Forward Current at t < 1s and Tj = 25°C Power Dissipation at Tamb = 25°C Thermal Resistance Junction to Ambient Air Junction Temperature Storage Temperature Range
Note: (1) Valid provided that electrodes are kept at ambient temperature.
(TA = 25°C unless otherwise noted)
Symbol VR VRM IF(AV) IFSM Ptot RJA Tj TS
Limit 50 75 150(1) 500 410(1) 450(1) 150 65 to +150
Unit V V mA mA mW °C/W °C °C
Document Number 88107 13-May-02
www.vishay.com 1
1N4151W
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
Parameter Forward Voltage Leakage Current Reverse Breakdown Voltage Capacitance
(TJ = 25°C unless otherwise noted)
Symbol VF IR V(BR)R Ctot
Test Condition IF = 50 mA VR = 50V VR = 20V, Tj = 150 °C IR = 5 µA (pulsed) VF = VR = 0V IF = 10 mA to IR = 10 mA to IR = 1 mA IF = 10 mA to IR = 1 mA VR = 6 V, RL = 100 f = 100 MHz, VRF = 2V
Min -- -- -- 75 -- -- -- 0.45
Typ -- -- -- -- -- -- -- --
Max 1.0 50 50 -- 2 4
Unit V nA µA V pF
Reverse Recovery Time
trr
ns 2 -- --
Rectification Efficiency
Rectification Efficiency Measurement Circuit
www.vishay.com 2
Document Number 88107 13-May-02
1N4151W
Vishay Semiconductors
formerly General Semiconductor
Ratings and Characteristic Curves (TA = 25°C unless otherwise noted)
Document Number 88107 13-May-02
www.vishay.com 3
1N4151W
Vishay Semiconductors
formerly General Semiconductor
Ratings and Characteristic Curves (TA = 25°C unless otherwise noted)
www.vishay.com 4
Document Number 88107 13-May-02
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