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Details, datasheet, quote on part number:1N4448W
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Datasheet text preview:
VISHAY
1N4448W
Vishay Semiconductors
Small Signal Diode
Features
· Silicon Epitaxial Planar Diode · Fast switching diode. · This diode is also available in other case styles including the DO-35 case with the type designation 1N4448, the MiniMELF case with the type designation LL4448, and the SOT-23 case with the type designation IMBD4448.
Mechanical Data
Case: SOD-123 Plastic Case Weight: approx. 10 mg Marking: A3 Packaging Codes/Options: D3/10 K per 13" reel (8 mm tape), 30 K/box
17431
D4/3 K per 7" reel (8 mm tape), 30 K/box
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified Parameter Reverse voltage Peak reverse voltage Average rectified current half wave rectification with resistive load Surge current Power dissipation
1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
Test condition
S ym b o l VR VRM
Value 75 100 150
1)
Unit V V mA
f 50 Hz
IF(AV)
t < 1 s and Tj = 25 °C
IFSM P tot
500 500
1)
mA mW
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified Parameter Ther mal resistance junction to ambient air Junction temperature Storage temperature
1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
Test condition
S ym b o l RJA Tj TS
Value 3501) 175 - 65 to + 175
Unit °C/W °C °C
Document Number 85722 Rev. 3, 10-Sep-03
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1N4448W
Vishay Semiconductors Electrical Characteristics
Tamb = 25 °C, unless otherwise specified Parameter Forward voltage Leakage current Test condition IF = 5 mA IF = 100 mA VR = 20 V VR = 75 V VR = 20 V, TJ = 150 °C Capacitance Reverse recovery time Rectification efficiency VF = VR = 0 V IF = 10 mA to IR = 10 mA, VR = 6 V, RL = 100 f = 100 MHz, VRF = 2 V trr 0. 45 Sy mbol VF VF IR IR IR Min 0. 62 Typ. Max 0. 72 1 25 5 50 4 4
VISHAY
Unit V V nA µA µA pF ns
Rectification Efficieny Measurement Circuit
17436
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
18105
17438
Figure 1. Forward characteristics
Figure 2. Dynamic Forward Resistance vs. Forward Current
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Document Number 85722 Rev. 3, 10-Sep-03
VISHAY
1N4448W
Vishay Semiconductors
17439
17441
Figure 3. Admissible Power Dissipation vs. Ambient Temperature
Figure 5. Leakage Current vs. Junction Temperature
17440
Figure 4. Relative Capacitance vs. Reverse Voltage
18106
Figure 6. Admissible Repetitive Peak Forward Current vs. Pulse Duration
Document Number 85722 Rev. 3, 10-Sep-03
www.vishay.com 3
1N4448W
Vishay Semiconductors Package Dimensions in Inches (mm)
VISHAY
.022 (0.55)
Cathode Band
.152 (3.85) .140 (3.55) .112 (2.85) .100 (2.55)
.053 (1.35) max.
.067 (1.70) .055 (1.40)
.010 (0.25) min.
.006 (0.15) max.
17432
Mounting Pad Layout
0.094 (2.40)
.004 (0.1) max.
0.055 (1.40)
0.055 (1.40)
18104
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Document Number 85722 Rev. 3, 10-Sep-03
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements.
1N4448W
Vishay Semiconductors
2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85722 Rev. 3, 10-Sep-03
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