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Details, datasheet, quote on part number:1N4700
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Datasheet text preview:
1N4678...1N4717
Vishay Semiconductors
Silicon Epitaxial Planar ZDiodes
Features
D D D D
Zener voltage specified at 50 mA Maximum delta VZ given from 10 mA to 100 mA Very high stability Low noise
Applications
94 9367
Voltage stabilization
Order Instruction
Type 1N4678 Ordering Code 1N4678TAP 1N4678TR Remarks Ammopack Tape and Reel
Absolute Maximum Ratings
Tj = 25_C Parameter Power dissipation Zcurrent Junction temperature Storage temperature range Test Conditions l=4 mm, TL=25 °C Type Symbol PV IZ Tj Tstg Value 500 PV/VZ 175 65...+175 Unit mW mA °C °C
Maximum Thermal Resistance
Tj = 25_C Parameter Junction ambient Test Conditions l=4 mm, TL=constant Symbol RthJA Value 300 Unit K/W
Electrical Characteristics
Tj = 25_C Parameter Forward voltage Test Conditions IF=100mA Type Symbol VF Min Typ Max 1.5 Unit V
Document Number 85586 Rev. A3, 09-Mar-01
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1N4678...1N4717
Vishay Semiconductors
Type 1) Zener Voltage VZ @ IZ = 50mA Typ. 1) V 1.8 2.0 2.2 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 8.7 9.1 10 11 12 13 14 15 16 17 18 19 20 22 24 25 27 28 30 33 36 39 43 Min. V 1.710 1.900 2.090 2.280 2.565 2.850 3.135 3.420 3.705 4.085 4.465 4.845 5.320 5.890 6.460 7.125 7.790 8.265 8.645 9.500 10.45 11.40 12.35 13.30 14.25 15.20 16.15 17.10 18.05 19.00 20.90 22.80 23.75 25.65 26.60 28.50 31.35 34.20 37.05 40.85 Max. V 1.890 2.100 2.310 2.520 2.835 3.150 3.465 3.780 4.095 4.515 4.935 5.355 5.880 6.510 7.140 7.875 8.610 9.135 9.555 10.50 11.55 12.60 13.65 14.70 15.75 16.80 17.85 18.90 19.95 21.00 23.10 25.20 26.25 28.35 29.40 31.50 34.65 37.80 40.95 45.15 Max. Reverse Test Current Voltage IR 3) VR 3) mA V 7.5 1.0 5.0 1.0 4.0 1.0 2.0 1.0 1.0 1.0 0.8 1.0 7.5 1.5 7.5 2.0 5.0 2.0 4.0 2.0 10 3.0 10 3.0 10 4.0 10 5.0 10 5.1 10 5.7 1.0 6.2 1.0 6.6 1.0 6.9 1.0 7.6 0,05 8.4 0.05 9.1 0.05 9.8 0.05 10.6 0.05 11.4 0.05 12.1 0.05 12.9 0.05 13.6 0.05 14.4 0.01 15.2 0.01 16.7 0.01 18.2 0.01 19.0 0.01 20.4 0.01 21.2 0.01 22.8 0.01 25.0 0.01 27.3 0.01 29.6 0.01 32.6 Max. Zener Current IZM 2) mA 120 110 100 95 90 85 80 75 70 65 60 55 50 45 35 31.8 29.0 27.4 26.2 24.8 21.6 20.4 19.0 17.5 16.3 15.4 14.5 13.2 12.5 11.9 10.8 9.9 9.5 8.8 8.5 7.9 7.2 6.6 6.1 5.5 Max. Voltage Change DVZ 4) V 0.70 0.70 0.75 0.80 0.85 0.90 0.95 0.95 0.97 0.99 0.99 0.97 0.96 0.95 0.90 0.75 0.50 0.10 0.08 0.10 0.11 0.12 0.13 0.14 0.15 0.16 0.17 0.18 0.19 0.20 0.22 0.24 0.25 0.27 0.28 0.30 0.33 0.36 0.39 0.43
1N4678 1N4679 1N4680 1N4681 1N4682 1N4683 1N4684 1N4685 1N4686 1N4687 1N4688 1N4689 1N4690 1N4691 1N4692 1N4693 1N4694 1N4695 1N4696 1N4697 1N4698 1N4699 1N4700 1N4701 1N4702 1N4703 1N4704 1N4705 1N4706 1N4707 1N4708 1N4709 1N4710 1N4711 1N4712 1N4713 1N4714 1N4715 1N4716 1N4717
1.) Toleranzing and voltage designation (VZ). The type numbers shown have a standard tolerance of ± 5% on the nominal zener voltage.
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2.) Maximum zener current ratings (IZM). Maximum zener current ratings are based on maximum zener voltage of the individual units.
Document Number 85586 Rev. A3, 09-Mar-01
1N4678...1N4717
Vishay Semiconductors
3.) Reverse leakage current (IR). Reverse leakage currents are guaranteed and measured at VR as shown on the table. 4.) Maximum voltage change (DVZ). Voltage change is equal to the difference between VZ at 100mA and VZ at 10mA.
Characteristics (Tj = 25_C unless otherwise specified)
600 Ptot Total Power Dissipation ( mW ) 500 400 300 200 100 0 0
95 9602
1.3 VZtn Relative Voltage Change VZtn=VZt/VZ(25°C) 1.2
TKVZ=10 104/K 8 6 104/K 104/K 104/K 104/K
1.1
4 2
1.0 0.9 0.8 60
0 2 104/K 4 104/K
40
80
120
160
200
95 9599
0
60
120
180
240
Tamb Ambient Temperature ( °C )
Tj Junction Temperature ( °C )
Figure 1. Total Power Dissipation vs. Ambient Temperature
1000 Voltage Change ( mV )
Figure 3. Typical Change of Working Voltage vs. Junction Temperature
TK VZ Temperature Coefficient of VZ ( 10 4 /K ) 15
Tj = 25°C 100
10
5 IZ=5mA 0
IZ=5mA 10
DVZ
1 0
95 9598
5 0 10 20 30 40 50 VZ Z-Voltage ( V )
5
10
15
20
25
VZ Z-Voltage ( V )
95 9600
Figure 2. Typical Change of Working Voltage under Operating Conditions at Tamb=25°C
Figure 4. Temperature Coefficient of Vz vs. ZVoltage
Document Number 85586 Rev. A3, 09-Mar-01
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1N4678...1N4717
Vishay Semiconductors
200 C D Diode Capacitance ( pF ) 50 Ptot=500mW Tamb=25°C
VR = 2V 100 Tj = 25°C
IZ Z-Current ( mA ) 25
95 9607
150
40
30
20 10
50
0 0
95 9601
0 5 10 15 20 15 20 25 30 35 VZ Z-Voltage ( V ) VZ Z-Voltage ( V )
Figure 5. Diode Capacitance vs. ZVoltage
100 IF Forward Current ( mA )
Figure 8. ZCurrent vs. ZVoltage
1000 r Z Differential Z-Resistance (
10 Tj = 25°C 1
W)
IZ=1mA 100
0.1 0.01 0.001 0 0.2 0.4 0.6 0.8 1.0
5mA 10 10mA
1 0
95 9606
Tj = 25°C 5 10 15 20 25
95 9605
VF Forward Voltage ( V )
VZ Z-Voltage ( V )
Figure 6. Forward Current vs. Forward Voltage Figure 9. Differential ZResistance vs. ZVoltage
100
IZ Z-Current ( mA )
80 Ptot=500mW Tamb=25°C 60
40 20 0 0 4 8 12 16 20
95 9604
VZ Z-Voltage ( V )
Figure 7. ZCurrent vs. ZVoltage
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Document Number 85586 Rev. A3, 09-Mar-01
1N4678...1N4717
Vishay Semiconductors
Z thp Thermal Resistance for Pulse Cond. (K/W) 1000
tp/T=0.5 100 tp/T=0.2 Single Pulse 10 tp/T=0.1 tp/T=0.05 1 101 tp/T=0.02 iZM=(VZ+(VZ2+4rzj tp/T=0.01
DT=TjmaxTamb
RthJA=300K/W
DT/Zthp)1/2)/(2rzj)
100
101 tp Pulse Length ( ms )
102
95 9603
Figure 10. Thermal Response
Dimensions in mm
Cathode Identification 0.55 max.
technical drawings according to DIN specifications 94 9366
1.7 max.
Standard Glass Case 54 A 2 DIN 41880 JEDEC DO 35 Weight max. 0.3 g
26 min.
3.9 max.
26 min.
Document Number 85586 Rev. A3, 09-Mar-01
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