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Details, datasheet, quote on part number:1N5229B
 
 
Part:1N5229B
Description:Silicon Zener Diodes
Company:Vishay Intertechnology
Datasheet:Download 1N5229B datasheet   File size : 223 kB
Request For quote:  Find where to buy 1N5229B
 



Datasheet text preview:
VISHAY

1N5221B to 1N5267B
Vishay Semiconductors

Silicon Zener Diodes
Features
· Silicon Planar Power Zener Diodes. · Standard Zener voltage tolerance is ± 5 % with a "B" suffix. 2 % available upon request. · These diodes are also available in MiniMELF case with the type designationTZM5221 ...TZM5267, SOT-23 case with the type designation MMBZ5225 ...MMBZ5267 and SOD-123 case with the types designation MMSZ5225 ... MMSZ5267
94 9367

Applications
Voltage stabilization

Mechanical Data
Case: DO-35 Glass Case Weight: approx. 130 mg

Packaging codes/options: TAP / 10k per Ammopack (52 mm tape), 30k/box TR / 10k per 13 " reel , 30k/box

Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified Parameter Power dissipation Z -c u r r e n t Junction temperature Storage temperature range Test condition TL 75 °C Sym bol PV IZ Tj Tstg Value 500 PV/VZ 200 - 65 to + 200 Unit mW mA °C °C

Thermal Characteristics
Tamb = 25 °C, unless otherwise specified Parameter Junction ambient Test condition l = 9.5 mm (3/8 "), TL=constant Sym bol RthJA Value 300 Unit K/W

Electrical Characteristics
Tamb = 25 °C, unless otherwise specified Parameter Forward voltage Test condition IF = 200 mA Sym bol VF M in Typ. Max 1. 1 Unit V

Document Number 85588 Rev. 1.5, 02-Oct-03

www.vishay.com 1

1N5221B to 1N5267B
Vishay Semiconductors Electrical Characteristics
1N5221B...1N5267B Partnumber Nominal Zener Voltage1) @ IZT, VZ V 1N5221B 1N5222B 1N5223B 1N5224B 1N5225B 1N5226B 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 1N5232B 1N5233B 1N5234B 1N5235B 1N5236B 1N5237B 1N5238B 1N5239B 1N5240B 1N5241B 1N5242B 1N5243B 1N5244B 1N5245B 1N5246B 1N5247B 1N5248B 1N5249B 1N5250B 1N5251B 1N5252B 1N5253B 1N5254B 1N5255B 1N5256B 1N5257B 1N5258B 1N5259B 1N5260B 1N5261B 1N5262B 1N5263B 1N5264B 2.4 2.5 2.7 2.8 3 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6 6.2 6.8 7.5 8.2 8.7 9.1 10 11 12 13 14 15 16 17 18 19 20 22 24 25 27 28 30 33 36 39 43 47 51 56 60 IZT mA 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 9.5 9 8.5 7.8 7.4 7 6.6 6.2 5.6 5.2 5 4.6 4.5 4.2 3.8 3.4 3.2 3 2.7 2.5 2.2 2.1 Test Current M a ximum Dynamic Impedance1) ZZT @ IZT 30 30 30 30 29 28 24 23 22 19 17 11 7 7 5 6 8 8 10 17 22 30 13 15 16 17 19 21 23 25 29 33 35 41 44 49 58 70 80 93 105 125 150 170 M a ximum Dynamic Impedance ZZK @ IZK = 0.25 mA 1200 1250 1300 1400 1600 1600 1700 1900 2000 1900 1600 1600 1600 1000 750 500 500 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 700 700 800 900 1000 1100 1300 1400 Typical Temperature of Coeffizient @ IZT (%/K) -0. 085 -0. 085 -0. 080 -0. 080 -0. 075 -0. 070 -0. 065 -0. 060 +0.055 +0.030 +0.030 +0.038 +0.038 +0.045 +0.050 +0.058 +0.062 +0.065 +0.068 +0.075 +0.076 +0.077 +0.079 +0.082 +0.082 +0.083 +0.084 +0.085 +0.086 +0.086 +0.087 +0.088 +0.089 +0.090 +0.091 +0.091 +0.092 +0.093 +0.094 +0.095 +0.095 +0.096 +0.096 +0.097

VISHAY

Maximum Reverse Leakage Current IR µA 100 100 75 75 50 25 15 10 5 5 5 5 5 5 3 3 3 3 3 3 2 1 0. 5 0. 1 0. 1 0. 1 0. 1 0. 1 0. 1 0. 1 0. 1 0. 1 0. 1 0. 1 0. 1 0. 1 0. 1 0. 1 0. 1 0. 1 0. 1 0. 1 0. 1 0. 1 VR V 1 1 1 1 1 1 1 1 1 2 2 3 3.5 4 5 6 6.5 6.5 7 8 8.4 9.1 9.9 10 11 12 13 14 14 15 17 18 19 21 21 23 25 27 30 33 36 39 43 46

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Document Number 85588 Rev. 1.5, 02-Oct-03

VISHAY
Par tnumber Nominal Zener Voltage1) @ IZT, VZ V 1N5265B 1N5266B 1N5267B
1)

1N5221B to 1N5267B
Vishay Semiconductors
Test Current M a ximum Dynamic Impedance1) IZT mA 2 1. 8 1. 7 ZZT @ IZT 185 230 270 Maximum Dynamic Impedance ZZK @ IZK = 0.25 mA 1 400 1 600 1 700 Typical Temperature of Coeffizient @ IZT (%/K) +0.097 +0.097 +0.098 Maximum Reverse Leakage Current IR µA 0.1 0.1 0.1 VR V 47 52 56

62 68 75

Based on dc-measurement at thermal equilibrium; lead length = 9.5 (3/8 "); thermal resistance of heat sink = 30 K/W

Typical Characteristics (Tamb = 25 °C unless otherwise specified)
RthJA ­Therm.Resist.Junction/ Ambient ( K/W )

500
VZtn ­ Relative oltageChange V

1.3 V Ztn=V Zt/V Z(25°C) 1.2 1.1 1.0 0.9 0.8 ­60
95 9599 TK VZ =10 x 10­4/K

400

300 l 200 100 TL=constant 0 0 5 10 15 20 l ­ Lead Length ( mm ) l

8 x 10­4/K 6 x 10­4/K 4 x 10­4/K 2 x 10­4/K 0 ­2 x 10­4/K ­4 x 10­4/K

0

60

120

180

240

95 961 1

Tj ­ Junction Temperature (°C )

Figure 1. Thermal Resistance vs. Lead Length

Figure 3. Typical Change of Working Voltage vs. Junction Temperature
600 500 400 300 200 100 0
95 9602

Tj =25°C 100

I Z=5mA 10

1 0
95 9598

5

10

15

20

25

Pot ­Total Power Dissipation ( mW) t

1000
VZ ­ VoltageChange mV ) (

0

40

80

120

160

200

V Z ­ Z-Voltage ( V )

Tamb ­ Ambient T mperature(°C ) e

Figure 2. Typical Change of Working Voltage under Operating Conditions at Tamb=25°C

Figure 4. Total Power Dissipation vs. Ambient Temperature

Document Number 85588 Rev. 1.5, 02-Oct-03

www.vishay.com 3

1N5221B to 1N5267B
Vishay Semiconductors
TK VZ ­Temperature Coefficient of VZ ( 10­4 /K)

VISHAY

15

100 80 60 40 20 0 0 10 20 30 40 50
95 9604

10

IZ ­ Z-Current ( mA)

Ptot=500mW Tamb=25°C

5 I Z=5mA 0

­5 V Z ­ Z-Voltage ( V )

0

4

8

12

16

20

95 9600

V Z ­ Z-Voltage ( V )

Figure 5. Temperature Coefficient of Vz vs. Z-Voltage

Figure 8. Z-Current vs. Z-Voltage

200
CD ­ Diode Capacitance ( pF )

50 40 30 20 10 0 0 5 10 15 20 25
95 9607

150 V R=2V 100 Tj =25°C

50

0
95 9601

IZ ­ Z-Current ( mA)

Ptot=500mW Tamb=25°C

15

20

25

30

35

V Z ­ Z-Voltage ( V )

V Z ­ Z-Voltage ( V )

Figure 6. Diode Capacitance vs. Z-Voltage

Figure 9. Z-Current vs. Z-Voltage

100
I F ­ Forward Current ( mA)

10 Tj =25°C 1

r Z ­ Differential Z-Resistance ( )

1000

I Z=1mA 100 5mA 10 10mA

0.1 0.01 0.001 0 0.2 0.4 0.6 0.8 1.0

1 0
95 9606

Tj =25°C 5 10 15 20 25 V Z ­ Z-Voltage ( V )

95 9605

V F ­ Forward Voltage ( V )

Figure 7. Forward Current vs. Forward Voltage

Figure 10. Differential Z-Resistance vs. Z-Voltage

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Document Number 85588 Rev. 1.5, 02-Oct-03

VISHAY
Zthp ­ThermalResistanceor PulseCond.(K/W) f

1N5221B to 1N5267B
Vishay Semiconductors

1000

tp/T=0.5 100 tp/T=0.2 Single Pulse 10 tp/T=0.1 tp/T=0.02 tp/T=0.05 1 10­1 100 101 tp ­ Pulse Length ( ms ) i ZM =(­VZ+(V Z2+4rzj x T/Zthp)1/2)/(2rzj) 102 tp/T=0.01 RthJA=300K/W T=Tjmax­Tamb

95 9603

Figure 11. Thermal Response

Package Dimensions in mm
Cathode Identification
technical drawings according to DIN specifications 94 9366

0.55 max.

1.7 max.

Standard Glass Case 54 A 2 DIN 41880 JEDEC DO 35 Weight max. 0.3g

26 min.

3.9 max.

26 min.

Document Number 85588 Rev. 1.5, 02-Oct-03

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