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Details, datasheet, quote on part number:1N5616GP
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Datasheet text preview:
1N5615GP THRU 1N5623GP
Vishay Semiconductors
formerly General Semiconductor
DO-204AC (DO-15)
Glass Passivated Junction Fast Switching Rectifier
1.0 (25.4) min.
ted* ten Pa
0.140 (3.6) 0.104 (2.6) Dia.
0.034 (0.86) 0.028 (0.71) Dia.
Features
Reverse Voltage 200 to 1000 V Forward Current 1.0 A
0.300 (7.6) 0.230 (5.8)
®
· Plastic package has Underwriters Laboratories Flammability Classification 94V-0 · High temperature metallurgically bonded construction · Cavity-free glass passivated junction · Capable of meeting environmental standards of MIL-S-19500 · Fast switching for high efficiency · 1.0 Ampere operation at TA=55°C with no thermal runaway · High temperature soldering guaranteed: 350°C/10 seconds, 0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension
1.0 (25.4) min.
Mechanical Data
Case: JEDEC DO-204AC, molded plastic over glass body Terminals: Plated axial leads, solderable per MIL-STD750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 0.015 oz., 0.4 g
Dimensions in inches and (millimeters)
*Glass-plastic encapsulation technique is covered by
Patent No. 3,996,602 and brazed-lead assembly by Patent No. 3,930,306
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter * Maximum repetitive peak reverse voltage * Maximum RMS voltage * Maximum DC blocking voltage * Maximum average forward rectified current 0.375" (9.5mm) lead length at TA=55°C * Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Typical thermal resistance (1) *Operating junction and storage temperature range 1N Symbols 5615GP VRRM VRMS VDC IF(AV) IFSM RJA TJ,TSTG 200 140 200 1N 5617GP 400 280 400 1N 5619GP 600 420 600 1.0 50 45 -65 to +175 1N 5621GP 800 560 800 1N 5623GP 1000 700 1000 Units V V A A A °C/W °C
Electrical Characteristics
Parameter
Ratings at 25°C ambient temperature unless otherwise specified.
1N Symbols 5615GP VF IR trr CJ TA=25°C TA=100°C
1N 5617GP
1N 5619GP 1.2 0.5 25
1N 5621GP
1N 5623GP
Units V µA
Maximum instantaneous forward voltage at 1.0A Maximum DC reverse current at rated DC blocking voltage *Maximum reverse recovery time at IF=0.5A, IR=1.0A, Irr=0.25A Typical junction capacitance at 4.0V, 1MHz
150
250 25
300
500
ns pF
Notes: (1) Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length, P.C.B. mounted *JEDEC registered values
Document Number 88522 28-Feb-02
www.vishay.com 1
1N5615GP THRU 1N5623GP
Vishay Semiconductors
formerly General Semiconductor
Ratings and Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 1 -- Forward Current Derating Curves
Average Forward Rectified Current (A)
1.0 60
Fig. 2 -- Maximum Non-Repetitive Peak Forward Surge Current
TA = 55°C 8.3ms Single Half Sine-Wave (JEDEC Method)
Peak Forward Surge Current (A)
Resistive or Inductive Load 0.75
50
40
0.5
30 20 10
0.25
0.375" (9.5mm) Lead Length 0 25 50 75 100 125 150 175
0 1 10 100
Ambient Temperature (°C)
Number of Cycles at 60 HZ
Fig. 3 -- Typical Instantaneous Forward Characteristics
10 20
Fig. 4 -- Typical Reverse Characteristics
Instantaneous Reverse Current (µA)
10 TJ = 125°C
Instantaneous Forward Current (A)
1 TJ = 25°C Pulse Width = 300µs 1% Duty Cycle 0.1
1 TJ = 75°C 0.1 TJ = 25°C 0.01
0.01 0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
20
40
60
80
100
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 -- Typical Junction Capacitance
100
Fig. 6 -- Typical Transient Thermal Impedance
100
Typical Thermal Impedance (°CW)
Junction Capacitance (pF)
TJ = 25°C f = 1.0MHZ Vsig = 50mVp-p
10
10
1
1 1 10 100
0.1 0.01
0.1
1
10
100
Reverse Voltage (V) www.vishay.com 2
t, Pulse Duration (sec.) Document Number 88522 28-Feb-02
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