D Excellent High-Frequency Gain: Gps @ 400 MHz D Very Low Noise: @ 400 MHz D Very Low Distortion D High ac/dc Switch Off-Isolation D High Gain: AV mA

Wideband High Gain Very High System Sensitivity High Quality of Amplification High-Speed Switching Capability High Low-Level Signal Amplification

The is a low-cost, all-purpose JFET which offers good performance at mid-to-high frequencies. It features low noise and leakage and guarantees high gain at 100 MHz. Its TO-226AA (TO-92) package is compatible with various tape-and-reel options for automated assembly (see Packaging Information). For similar products TO-206AF (TO-72) and TO-236 (SOT-23) packages, see the 2N4416/2N4416A/SST4416 data sheet.

Gate-Source/Gate-Drain Voltage. ­25 V Forward Gate Current. 10 mA Storage Temperature. to 150_C Operating Junction Temperature. to 150_C Document Number: D ,04-Jun-01 Lead Temperature (1/16" from case for 10 sec.). 300_C Power Dissipationa. 350 mW Notes a. Derate 2.8 mW/_C above 25_C www.vishay.com

Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Currentc Drain Cutoff Current Drain-Source On-Resistance Gate-Source Voltage Gate-Source Forward Voltage V(BR)GSS VGS(off) IDSS IGSS IG ID(off) rDS(on) VGS VGS(F) mA , VDS 0 V VDS 2 nA VDS 15 V, VGS 0 V VGS ­15 V, VDS = 100_C VDG 1 mA VDS 10 V, VGS ­8 V VGS 1 mA VDS mA , VDS nA mA

Common-Source Forward Transconductancec Common-Source Output Conductancec Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltagec = 1 kHz gfs gos Ciss Crss en VDS 15 V VGS 100 MHz = 1 kHz VDS 15 V, VGS = 1 MHz VDS 10 V, VGS Hz pF nV/ 6.5 mS

Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms, duty cycle v2%. c. This parameter not registered with JEDEC.

20 10 rDS(on) ­ Drain-Source On-Resistance ( ) gfs ­ Forward Transconductance (mS) 500 rDS = 1 mA, VGS 0 V gos @ VDS 10 V, VGS kHz