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Details, datasheet, quote on part number:2N3958
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2N3958
Vishay Siliconix
Monolithic N-Channel JFET Dual
PRODUCT SUMMARY
VGS(off) (V)
1.0 to 4.5
V(BR)GSS Min (V)
50
gfs Min (mS)
1
IG Max (pA)
50
jVGS1 VGS2j Max (mV)
25
FEATURES
D D D D D D Monolithic Design High Slew Rate Low Offset/Drift Voltage Low Gate Leakage: 5 pA Low Noise: 9 nV/Hz High CMRR: 100 dB
BENEFITS
D Tight Differential Match vs. Current D Improved Op Amp Speed, Settling Time Accuracy D Minimum Input Error/Trimming Requirement D Insignificant Signal Loss/Error Voltage D High System Sensitivity D Minimum Error with Large Input Signal
APPLICATIONS
D Wideband Differential Amps D High-Speed, Temp-Compensated, Single-Ended Input Amps D High Speed Comparators D Impedance Converters
DESCRIPTION
The low cost 2N3958 JFET dual is designed for high-performance differential amplification for a wide range of precision test instrumentation applications. This series features tightly matched specs, low gate leakage for accuracy, and wide dynamic range with IG guaranteed at VDG = 20 V. The hermetically-sealed TO-71 package is available with full military processing (see Military Information and the 2N5545/5546/5547JANTX/JANTXV data sheet).
For similar products see 2N5196/5197/5198/5199, the low-noise U/SST401 series, the high-gain 2N5911/5912, and the low-leakage U421/423 data sheets.
TO-71
S1 1 D1 6
G2
2
5
D2
3 G1 Top View
4 S2
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . . . . . . . 300 _C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to 200_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to 150_C Document Number: 70256 S-04031--Rev. B, 04-Jun-01 Power Dissipation : Per Sidea . . . . . . . . . . . . . . . . . . . . . . . . 250 mW Totalb . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW
Notes a. Derate 2 mW/_C above 85_C b. Derate 4 mW/_C above 85_C www.vishay.com
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2N3958
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits Parameter Static
Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current V(BR)GSS VGS(off) IDSS IGSS IG = 1 mA, VDS = 0 V VDS = 20 V, ID = 1 nA VDS = 20 V, VGS = 0 V VGS = 30 V, VDS = 0 V TA = 150_C VDG = 20 V, ID = 200 mA TA =125_C VDG = 20 V, ID = 200 mA ID = 50 mA IG = 1 mA, VDS = 0 V 0.5 50 1.0 0.5 57 V 2 3 10 20 5 0.8 1.5 4.5 5 100 500 50 250 4 4.2 2 V mA pA nA pA nA
Symbol
Test Conditions
Min
Typa
Max
Unit
Gate Operating Current
IG
Gate-Source Voltage Gate-Source Forward Voltage
V GS VGS(F)
Dynamic
Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Drain-Gate Capacitance Equivalent Input Noise Voltage Noise Figure gfs gos Ciss Crss Cdg en NF VDS = 20 V, VGS = 0 V f = 1 MHz VDG = 10 V, IS = 0 , f = 1 MHz VDS = 20 V, VGS = 0 V, f = 1 kHz VDS = 20 V, VGS = 0 V f = 100 Hz, RG = 10 MW 9 0.5 VDS = 20 V, VGS = 0 V f = 1 kHz 1 2.5 2 3 1 3 35 4 1.2 1.5 nV/ Hz dB pF mS mS
Matching
Differential Gate-Source Voltage Gate-Source Voltage Differential Change with Temperature |V GS1V GS2| D|V GS1V GS2| DT I DSS1 I DSS2 g fs1 g fs2 |g os1g os2| |I G1I G2| CMRR VDG = 20 V, ID = 200 mA TA = 125_C VDG = 10 to 20 V, ID = 200 mA VDG = 20 V, ID = 200 mA VDG = 20 V, ID = 200 mA TA = 55 to 125_C 15 25 mV mV/_C
20
100
Saturation Drain Current Ratio
VDS = 20 V, VGS = 0 V
0.85
0.97
1
Transconductance Ratio
0.85 VDS = 20 V, ID = 200 mA f = 1 kHz
0.97
1
Differential Output Conductance
0.1
mS
Differential Gate Current Common Mode Rejection Ratioc
0.1 100
10
nA dB NQP
Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%. c. This parameter not registered with JEDEC.
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Document Number: 70256 S-04031--Rev. B, 04-Jun-01
2N3958
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance vs. Gate-Source Cutoff Voltage
5 IDSS Saturation Drain Current (mA) 3 gfs Forward Transconductance (mS) 100 nA IG @ ID = 200 mA 10 nA TA = 125_C I G Gate Leakage 1 nA IGSS @ 125_C 100 pA 200 mA 50 mA IGSS @ 25_C 50 mA
Gate Leakage Current
4 gfs 3
IDSS
2.6
2.2
2
1.8
10 pA TA = 25_C 1 pA
1
IDSS @ VDS = 15 V, VGS = 0 V gfs @ VDG = 15 V, VGS = 0 V f = 1 kHz
1.4
0 0 1 2 3 4 5
1
0.1 pA 0 10 20 30 40 50 VDG Drain-Gate Voltage (V)
VGS(off) Gate-Source Cutoff Voltage (V)
Output Characteristics
5 VGS(off) = 2 V 4 I D Drain Current (mA) I D Drain Current (mA) 4 5
Output Characteristics
VGS(off) = 3 V VG S = 0 V 0.3 V 0.6 V 3 0.9 V 2 1.2 V 1.5 V 1 1.8 V 2.1 V 0 20 0 4 8 12 16 2.4 V 20
3
VG S = 0 V 0.2 V
2
0.4 V 0.6 V 0.8 V
1
1.0 V 1.2 V
0 0 4 8 12
1.4 V 16
VDS Drain-Source Voltage (V)
VDS Drain-Source Voltage (V)
Output Characteristics
2 VGS(off) = 2 V 1.6 I D Drain Current (mA) VG S = 0 V 0.2 V 0.4 V 1.2 0.6 V 0.8 V 0.8 1.0 V 0.4 1.2 V 1.4 V 0 0 0.2 0.4 0.6 0.8 1.6 V 1 0 0 0.2 I D Drain Current (mA) 2.0 2.5
Output Characteristics
VGS(off) = 3 V VG S = 0 V 0.3 V 0.6 V 0.9 V 1.5 1.2 V 1.0 1.5 V 1.8 V 0.5 2.1 V
2.4 V 0.4 0.6 0.8 1
VDS Drain-Source Voltage (V)
VDS Drain-Source Voltage (V)
Document Number: 70256 S-04031--Rev. B, 04-Jun-01
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2N3958
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Transfer Characteristics
5 VGS(off) = 2 V 4 I D Drain Current (mA) (mV) VDS = 20 V 100 VDG = 20 V TA = 25_C
Gate-Source Differential Voltage vs. Drain Current
VGS1 VGS2 1.5 2.0 2.5
3
TA = 55_C 25_C
10
2
1
125_C
0 0 0.5 1.0 VGS Gate-Source Voltage (V)
1 0.01 0.1 ID Drain Current (mA) 1
Voltage Differential with Temperature vs. Drain Current
100 VDG = 20 V ( m V/ _ C ) 120 DTA = 25 to 125_C CMRR (dB) 110 130
Common Mode Rejection Ratio vs. Drain Current
CMRR = 20 log
DVDG DV GS1 VGS2
VGS1 VGS2
10 Dt
DTA = 55 to 25_C
DVDG = 10 20 V 100 5 10 V 90
D
1 0.01
80 0.1 ID Drain Current (mA) 1 0.01 0.1 ID Drain Current (mA) 1
Circuit Voltage Gain vs. Drain Current
100 rDS(on) Drain-Source On-Resistance ( ) 1k
On-Resistance vs. Drain Current
80 A V Voltage Gain
800
60
VGS(off) = 3 V 2 V
600 VGS(off) = 2 V 400 3 V 200
40 AV + 20
g fs R L 1 ) R Lg os 10 V ID 0.1 ID Drain Current (mA)
Assume VDD = 15 V, VDS = 5 V RL +
0 0.01
0 1 0.01 0.1 ID Drain Current (mA) Document Number: 70256 S-04031--Rev. B, 04-Jun-01 1
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2N3958
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Common-Source Input Capacitance vs. Gate-Source Voltage
10 C rss Reverse Feedback Capacitance (pF) f = 1 MHz 8 5 f = 1 MHz 4
Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage
C iss Input Capacitance (pF)
6 VDS = 0 V 4 5V 15 V 2 20 V 0 0 4 8 12 16 20 VGS Gate-Source Voltage (V)
3
VDS = 0 V 5V
2
15 V
1 20 V 0 0 4 8 12 16 20 VGS Gate-Source Voltage (V)
Equivalent Input Noise Voltage vs. Frequency
20 VDS = 20 V gos Output Conductance (µS) 16 ID @ 200 mA 12 2.0 2.5
Output Conductance vs. Drain Current
VGS(off) = 2 V VDS = 20 V f = 1 kHz
Hz
en Noise Voltage nV /
TA = 55_C 1.5
8
VG S = 0 V
1.0
25_C
4
0.5
125_C
0 10 100 1k f Frequency (Hz) 10 k 100 k
0 0.01
0.1 ID Drain Current (mA)
1
Common-Source Forward Transconductance vs. Drain Current
2.5 VGS(off) = 2 V gfs Forward Transconductance (mS) 2.0 TA = 55_C 1.5 25_C 1.0 VDS = 20 V f = 1 kHz rDS(on) Drain-Source On-Resistance ( ) 1k
On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage
10
g os Output Conductance ( mS)
800
gos
8
600
6
400
rDS
4
0.5 125_C 0 0.01 0.1 ID Drain Current (mA) 1
200 rDS @ ID = 100 mA, VGS = 0 V gos @ VDS = 20 V, VGS = 0 V, f = 1 kHz 0 0 1 2 3 4 5
2
0
VGS(off) Gate-Source Cutoff Voltage (V)
Document Number: 70256 S-04031--Rev. B, 04-Jun-01
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