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Details, datasheet, quote on part number:2N4341
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Datasheet text preview:
2N4338/4339/4340/4341
Vishay Siliconix
N-Channel JFETs
PRODUCT SUMMARY
Part Number
2N4338 2N4339 2N4340 2N4341
VGS(off) (V)
0.3 to 1 0.6 to 1.8 1 to 3 2 to 6
V(BR)GSS Min (V)
50 50 50 50
gfs Min (mS)
0.6 0.8 1.3 2
IDSS Max (mA)
0.6 1.5 3.6 9
FEATURES
D D D D Low Cutoff Voltage: 2N4338 <1 V High Input Impedance Very Low Noise High Gain: AV = 80 @ 20 mA
BENEFITS
D Full Performance from Low-Voltage Power Supply: Down to 1 V D Low Signal Loss/System Error D High System Sensitivity D High-Quality Low-Level Signal Amplification
APPLICATIONS
D High-Gain, Low-Noise Amplifiers D Low-Current, Low-Voltage Battery-Powered Amplifiers D Infrared Detector Amplifiers D Ultrahigh Input Impedance Pre-Amplifiers
DESCRIPTION
The 2N4338/4339/4340/4341 n-channel JFETs are designed for sensitive amplifier stages at low- to mid-frequencies. Low cut-off voltages accommodate low-level power supplies and low leakage for improved system accuracy. The TO-206AA (TO-18) package is hermetically sealed and suitable for military processing (see Military Information). For similar products in TO-226AA (TO-92) and TO-236 (SOT-23) packages, see the J/SST201 series data sheet.
TO-206AA (TO-18)
S 1
2 D Top View
3 G and Case
ABSOLUTE MAXIMUM RATINGS
Gate-Source/Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 V Forward Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to 200_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to 175_C Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW Notes a. Derate 2 mW/_C above 25_C
For applications information see AN102 and AN106. Document Number: 70240 S-04028--Rev. E, 04-Jun-01 www.vishay.com
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2N4338/4339/4340/4341
Vishay Siliconix
SPECIFICATIONS FOR 2N4338 AND 2N4339 (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N4338 2N4339
Parameter Static
Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Currentb
Symbol
Test Conditions
Typa
Min
Max
Min
Max
Unit
V(BR)GSS VGS(off) IDSS IGSS IG ID(off) VGS(F)
IG = 1 mA , VDS = 0 V VDS = 15 V, ID = 0.1 mA VDS = 15 V, VGS = 0 V VGS = 30 V, VDS = 0 V TA = 150_C VDG = 15 V, ID = 0.1 mA VDS = 15 V, VGS = 5 V IG = 1 mA , VDS = 0 V
57
50 0.3 0.2 1 0.6 100 100
50 0.6 0.5 1.8 1.5 100 100 V mA pA nA pA V
2 4 2 2 0.7
Drain Cutoff Current Gate-Source Forward Voltagec
50
50
Dynamic
Common-Source Forward Transconductance Common-Source Output Conductance Drain-Source On-Resistance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltagec Noise Figure gfs VDS = 15 V, VGS = 0 V, f = 1 kHz gos rds(on) Ciss VDS = 15 V, VGS = 0 V, f = 1 MHz Crss en NF VDS = 10 V, VGS = 0 V, f = 1 kHz VDS = 15 V, VGS = 0 V f = 1 kHz, RG = 1 MW 1.5 6 1 1 3 3 nV/ Hz dB VDS = 0 V, VGS = 0 V, f = 1 kHz 5 5 2500 7 15 1700 7 pF mS W 0.6 1.8 0.8 2.4 mS
SPECIFICATIONS FOR 2N4340 AND 2N4341 (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N4340 2N4341
Parameter Static
Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Currentb
Symbol
Test Conditions
Typa
Min
Max
Min
Max
Unit
V(BR)GSS VGS(off) IDSS IGSS IG ID(off) VGS(F)
IG = 1 mA , VDS = 0 V VDS = 15 V, ID = 0.1 mA VDS = 15 V, VGS = 0 V VGS = 30 V, VDS = 0 V TA = 150_C VDG = 15 V, ID = 0.1 mA VGS = 5 V VDS = 15 V
57
50 1 1.2 3 3.6 100 100
50 2 3 V 6 9 100 100 mA pA nA
2 4 2 2 3 0.7
50 70
pA
Drain Cutoff Current Gate-Source Forward Voltage
VGS = 10 V
IG = 1 mA , VDS = 0 V
V
www.vishay.com
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Document Number: 70240 S-04028--Rev. E, 04-Jun-01
2N4338/4339/4340/4341
Vishay Siliconix
SPECIFICATIONS FOR 2N4340 AND 2N4341 (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N4340 2N4341
Parameter Dynamic
Common-Source Forward Transconductance Common-Source Output Conductance Drain-Source On-Resistance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltagec Noise Figure
Symbol
Test Conditions
Typa
Min
Max
Min
Max
Unit
gfs VDS = 15 V, VGS = 0 V, f = 1 kHz gos rds(on) Ciss VDS = 15 V, VGS = 0 V, f = 1 MHz Crss en NF VDS = 10 V, VGS = 0 V, f = 1 kHz VDS = 15 V, VGS = 0 V f = 1 kHz, RG = 1 MW 1.5 6 VDS = 0 V, VGS = 0 V, f = 1 kHz 5
1.3
3 30 1500 7 3
2
4 60 800 7
mS mS W
pF 3 nV/ Hz 1 1 dB
Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms, duty cycle v3%. c. This parameter not registered with JEDEC.
NPA
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance vs. Gate-Source Cutoff Voltage
10 IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDS = 10 V, VGS = 0 V f = 1 kHz 5 gfs Forward Transconductance (mS) 10 nA ID = 100 mA 1 nA IG Gate Leakage (A) TA = 125_C 500 mA
Gate Leakage Current
IDSS Saturation Drain Current (mA)
8
4
6 gfs 4 IDSS
3
100 pA
IGSS @ 125_C 500 mA
2
10 pA ID = 100 mA TA = 25_C 1 pA IGSS @ 25_C
2
1
0 0 1 2 3 4 5
0
0.1 pA 0 6 12 18 24 30
VGS(off) Gate-Source Cutoff Voltage (V)
VDG Drain-Gate Voltage (V)
Document Number: 70240 S-04028--Rev. E, 04-Jun-01
www.vishay.com
7-3
2N4338/4339/4340/4341
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage
1500 rDS(on) Drain-Source On-Resistance ( ) 10 2 VGS(off) = 1.5 V 1200 gos gfs Forward Transconductance (mS) gos Output Conductance (µS) 8 1.6 TA = 55_C 1.2 VDS = 10 V f = 1 kHz
Common-Source Forward Transconductance vs. Drain Current
900 rDS 600
6
4
0.8
25_C
300 rDS @ ID = 100 mA, VGS = 0 V gos @ VDS= 10 V, VGS = 0 V, f = 1 kHz 0 0 1 2 3 4 5
2
0.4
125_C
0
0 0.01 0.1 ID Drain Current (mA) 1
VGS(off) Gate-Source Cutoff Voltage (V)
Output Characteristics
400 VGS(off) = 0.7 V 320 ID Drain Current (µA) ID Drain Current (mA) VGS = 0 V 1.6 2
Output Characteristics
VGS(off) = 1.5 V
VGS = 0 V 1.2 0.3 V 0.8 0.6 V 0.4 1.2 V 0 0.9 V
240
0.1 V
160
0.2 V
0.3 V 80 0.5 V 0 0 4 8 12 16 20 0.4 V
0
4
8
12
16
20
VDS Drain-Source Voltage (V)
VDS Drain-Source Voltage (V)
Output Characteristics
300 VGS(off) = 0.7 V 240 VG S = 0 V 0.1 V ID Drain Current (µA) 180 0.2 V 120 0.3 V 60 0.4 V 0.5 V 0 0 0.1 0.2 0.3 0.4 0.5 0 0 0.2 ID Drain Current (mA) 0.8 1
Output Characteristics
VGS(off) = 1.5 V
0.3 V V GS = 0 V 0.6 0.6 V 0.4
0.2
0.9 V 1.2 V 0.4 0.6 0.8 1.0
VDS Drain-Source Voltage (V) www.vishay.com
VDS Drain-Source Voltage (V) Document Number: 70240 S-04028--Rev. E, 04-Jun-01
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2N4338/4339/4340/4341
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Transfer Characteristics
500 VGS(off) = 0.7 V 400 ID Drain Current (µA) ID Drain Current (mA) VDS = 10 V 1.6 TA = 55_C 300 TA = 55_C 25_C 200 125_C 100 1.2 25_C 2 VGS(off) = 1.5 V VDS = 10 V
Transfer Characteristics
0.8
0.4
125_C
0 0 0.1 0.2 0.3 0.4 0.5
0 0 0.4 0.8 1.2 1.6 2
VGS Gate-Source Voltage (V)
VGS Gate-Source Voltage (V)
Transconductance vs. Gate-Source Voltage
1.5 VGS(off) = 0.7 V gfs Forward Transconductance (mS) 1.2 VDS = 10 V f = 1 kHz gfs Forward Transconductance (mS) 3.2 4
Transconductance vs. Gate-Source Voltage
VGS(off) = 1.5 V VDS = 10 V f = 1 kHz
TA = 55_C 25_C
0.9
2.4 TA = 55_C 25_C 1.6
0.6 125_C 0.3
0.8 125_C 0
0 0 0.1 0.2 0.3 0.4 0.5
0
0.4
0.8
1.2
1.6
2
VGS Gate-Source Voltage (V)
VGS Gate-Source Voltage (V)
Circuit Voltage Gain vs. Drain Current
200 1 ) R Lg os Assume VDD = 15 V, VDS = 5 V 10 V RL + ID rDS(on) Drain-Source On-Resistance ( ) AV + g fs R L 2000
On-Resistance vs. Drain Current
TA = 25_C 1600 VGS(off) = 0.7 V 1200
160 AV Voltage Gain
120
80 1.5 V 40
VGS(off) = 0.7 V
800 1.5 V 400
0 0.01 0.1 ID Drain Current (mA) 1
0 0.01 0.1 ID Drain Current (mA) 1
Document Number: 70240 S-04028--Rev. E, 04-Jun-01
www.vishay.com
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