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Details, datasheet, quote on part number:2N4856A
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2N4856A/4857A/4858A
Vishay Siliconix
N-Channel JFETs
PRODUCT SUMMARY
Part Number
2N4856A 2N4857A 2N4858A
VGS(off) (V)
4 to 10 2 to 6 0.8 to 4
V(BR)GSS Min (V)
40 40 40
IDSS Min (mA)
50 20 8
rDS(on) Max (W )
25 40 60
ID(off) Typ (pA)
5 5 5
tON Typ (ns)
4 4 4
FEATURES
D Low On-Resistance: 2N4856A <25 W D Fast Switching--tON: 4 ns D High Off-Isolation--I D(off): 5 pA D Low Capacitance: 3 pF D Low Insertion Loss
BENEFITS
D D D D D Low Error Voltage High-Speed Analog Circuit Performance Negligible "Off-Error," Excellent Accuracy Good Frequency Response Eliminates Additional Buffering
APPLICATIONS
D D D D D Analog Switches Choppers Sample-and-Hold Normally "On" Switches Current Limiters
DESCRIPTION
The 2N4856A/4857A/4858A all-purpose JFET analog switches offer low on-resistance, low capacitance, good isolation, and fast switching. Hermetically-sealed TO-206AA (TO-18) packaging allows full military processing (see Military Information). For similar products in TO-226AA (TO-92) and SOT-23 packages, see the J/SST111 series data sheet. For similar duals, see the 2N5564/5565/5566 data sheet.
TO-206AA (TO-18)
S 1
2 D Top View
3 G and Case
Document Number: 70243 S-04028--Rev. D, 04-Jun-01
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7-1
2N4856A/4857A/4858A
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage : (2N4856A-58A) . . . . . . . . . . . . . . . 40 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Lead Temperature (1/16" from case for 10 seconds) . . . . . . . . . . . . . . 300 _C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to 200_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to 200_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8 W Notes a. Derate 10 mW/_C for TC > 25_C
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N4856A 2N4857A 2N4858A
Parameter Static
Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Currentc
Symbol
Test Conditions
Typa
Min
Max
Min
Max
Min
Max
Unit
V(BR)GSS VGS(off) IDSS IGSS IG ID(off)
IG = 1 mA , VDS = 0 V VDS = 15 V, ID = 0.5 nA VDS = 15 V, VGS = 0 V VGS = 20 V, VDS = 0 V TA = 150_C VDG = 15 V, ID = 10 mA VDS = 15 V, VGS = 10 V
55
40 4 50 10
40 2 20 250 500 6 100 250 500
40 V 0.8 8 4 80 250 500 mA pA nA pA nA
5 13 5 5 13 0.25 0.35 0.5
250 500
250 500
250 500 0.5
Drain Cutoff Current
TA = 150_C ID = 5 mA
Drain-Source On-Voltage
VDS(on)
V GS = 0 V
ID = 10 mA ID = 20 mA
0.5 0.75 25 40 60
V
Drain-Source On-Resistancec Gate-Source Forward Voltagec
rDS(on) VGS(F)
VGS = 0 V, ID = 1 mA IG = 1 mA , VDS = 0 V 0.7
W V
Dynamic
Common-Source Forward Transconductancec Common-Source Output Conductancec Drain-Source On-Resistance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltagec gfs gos rds(on) Ciss Crss en VDS = 0 V, VGS = 10 V f = 1 MHz VDS = 20 V, ID = 1 mA f = 1 kHz 6 25 25 7 3 3 10 4 40 10 3.5 60 10 pF 3.5 nV/ Hz mS mS W
VGS = 0 V, ID = 0 mA f = 1 kHz
VDS = 10 V, ID = 10 mA f = 1 kHz
Switching
td(on) Turn-On Time Turn-Off Time tr tOFF VDD = 10 V, VGSH = 0 V See Switching Circuit 2 2 12 5 3 20 6 4 40 8 8 80 NCB ns
Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v100 ms duty cycle v10%. c. This parameter not registered with JEDEC. www.vishay.com
7-2
Document Number: 70243 S-04028--Rev. D, 04-Jun-01
2N4856A/4857A/4858A
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
On-Resistance and Drain Current vs. Gate-Source Cutoff Voltage rDS @ ID = 1 mA, VGS = 0 IDSS @ VDS = 20 V, VGS = 0
80 IDSS 120 160
100 rDS(on) Drain-Source On-Resistance ( )
200 rDS(on) Drain-Source On-Resistance ( ) IDSS Saturation Drain Current (mA)
100
On-Resistance vs. Drain Current
TA = 25_C
80 VGS(off) = 2 V 60
60
rDS
40
80
40
4 V 8 V
20
40
20
0 0 4 6 8 VGS(off) Gate-Source Cutoff Voltage (V) 2 10
0
0 1 10 ID Drain Current (mA) 100
On-Resistance vs. Temperature
200 rDS(on) Drain-Source On-Resistance ( ) ID = 1 mA rDS changes X 0.7%/_C 160 Switching Time (ns) 4 5
Turn-On Switching
tr approximately independent of ID VDG = 5 V, RG = 50 W VGS(L) = 10 V tr td(on) @ ID = 12 mA 2
120
3
80
VGS(off) = 2 V 4 V
40 8 V 0 55 35 15 5 25 45 65 85 105 125 TA Temperature (_C)
1
td(on) @ ID = 3 mA
0 0 2 4 6 8 10
VGS(off) Gate-Source Cutoff Voltage (V)
Turn-Off Switching
30 td(off) independent of device VGS(off) VDG = 5 V, VGS(L) = 10 V 24 Switching Time (ns) Capacitance (pF) 24 30
Capacitance vs. Gate-Source Voltage
f = 1 MHz
18 tf 12 td(off) 6 VGS(off) = 8 V 0 0 2 4
VGS(off) = 2 V
18
12 Ciss @ VDS = 0 V 6 Crss @ VDS = 0 V 0
6
8
10
0
4
8
12
16
20
ID Drain Current (mA) Document Number: 70243 S-04028--Rev. D, 04-Jun-01
VGS Gate-Source Voltage (V) www.vishay.com
7-3
2N4856A/4857A/4858A
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Noise Voltage vs. Frequency
100 VDG = 10 V gfs Forward Transconductance (mS) 40 Hz
Forward Transconductance and Output Conductance vs. Gate-Source Cutoff Voltage
50 gfs and gos @ VDS = 20 V VGS = 0 V, f = kHz 500
gos Output Conductance (µS)
400 gos 300
en Noise Voltage nV /
30
gfs
10 ID = 1 mA
20
200
ID = 10 mA
10
100
1 10 100 1k f Frequency (Hz) 10 k 100 k
0 0 4 6 8 VGS(off) Gate-Source Cutoff Voltage (V) 2 10
0
10 nA
Gate Leakage Current
IGSS @ 25_C 100
Common-Gate Input Admittance
VDG = 10 V ID = 10 mA TA = 25_C
1 nA IG Gate Leakage
TA = 125_C
ID = 10 mA
gig
100 pA
1 mA (mS) 1 mA
10 big
10 pA TA = 25_C 1 pA
10 mA
IGSS @ 25_C
1
IG(on) @ ID 0.1 pA 0 6 12 18 24 30 0.1 100 200 500 1000
VDG Drain-Gate Voltage (V)
f Frequency (MHz)
Common-Gate Forward Admittance
100 VDG = 10 V ID = 10 mA TA = 25_C gfg 10 (mS) (mS) gfg bfg 1 10
Common-Gate Reverse Admittance
VDG = 10 V ID = 10 mA TA = 25_C brg
+grg grg 0.1
1
0.1 100 200 500 f Frequency (MHz) 1000
0.01 100 200 500 f Frequency (MHz) 1000
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7-4
Document Number: 70243 S-04028--Rev. D, 04-Jun-01
2N4856A/4857A/4858A
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Common-Gate Output Admittance
100 VDG = 10 V ID = 10 mA TA = 25_C ID Drain Current (mA) bog 10 (mS) 20 VGS(off) = 2 V 16
Output Characteristics
12
VG S = 0 V
0.2 V 0.4 V
gog 1
8
0.6 V 0.8 V
4
1.0 V 1.2 V
0.1 100 200 500 1000
0 0 0.2 0.4 0.6 0.8 1.0
f Frequency (MHz)
VDS Drain-Source Voltage (V)
Output Characteristics
40 VGS(off) = 4 V 32 ID Drain Current (mA) ID Drain Current (mA) 40 50
Output Characteristics
VGS(off) = 8 V
1 V VG S = 0 V 30 2 V 3 V 20 4 V 5 V 6 V 3.0 V 0 0 0.2 0.4 0.6 0.8 1.0 0 0 0.2 0.4 0.6 0.8 1.0 24 VG S = 0 V 0.5 V 1.0 V 16 1.5 V 2.0 V 8 2.5 V
10
VDS Drain-Source Voltage (V)
VDS Drain-Source Voltage (V)
VDD
SWITCHING TIME TEST CIRCUIT
2N4856A
VGS(L) RL* ID(on) *Non-inductive 10 V 464 W 20 mA
RL OUT VGS(H) VGS(L) 1 51
2N4857A
6 V 953 W 10 mA
2N4858A
4 V 1910 W 5 mA
INPUT PULSE
Rise Time < 1 ns Fall Time < 1 ns Pulse Width 100 ns PRF 1 MHz Document Number: 70243 S-04028--Rev. D, 04-Jun-01
SAMPLING SCOPE
Rise Time 0.4 ns Input Resistance 10 MW Input Capacitance 1.5 pF
VIN Scope 51
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