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Details, datasheet, quote on part number:2N5565
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2N5564/5565/5566
Vishay Siliconix
Matched N-Channel JFET Pairs
PRODUCT SUMMARY
Part Number
2N5564 2N5565 2N5566
VGS(off) (V)
0.5 to 3 0.5 to 3 0.5 to 3
V(BR)GSS Min (V)
40 40 40
gfs Min (mS)
7.5 7.5 7.5
IG Typ (pA)
3 3 3
jVGS1 VGS2j Max (mV)
5 10 20
FEATURES
D D D D D D D Two-Chip Design High Slew Rate Low Offset/Drift Voltage Low Gate Leakage: 3 pA Low Noise: 12 nV/Hz @ 10 Hz Good CMRR: 76 dB Minimum Parasitics
BENEFITS
D Tight Differential Match vs. Current D Improved Op Amp Speed, Settling Time Accuracy D Minimum Input Error/Trimming Requirement D Insignificant Signal Loss/Error Voltage D High System Sensitivity D Minimum Error with Large Input Signals D Maximum High Frequency Performance
APPLICATIONS
D Wideband Differential Amps D High-Speed, Temp-Compensated, Single-Ended Input Amps D High-Speed Comparators D Impedance Converters D Matched Switches
DESCRIPTION
The 2N5564/5565/5566 are matched pairs of JFETs mounted in a TO-71 package. This two-chip design reduces parasitics for good performance at high frequency while ensuring extremely tight matching. This series features high breakdown voltage (V(BR)DSS typically > 55 V), high gain (typically > 9 mS), and <5 mV offset between the two die. The hermetically-sealed TO-71 package is available with full military processing (see Military Information).
For similar products see the low-noise U/SST401 series, and the low-leakage 2N5196/5197/5198/5199 data sheets.
TO-71
S1 1 D1 6 D2 G2
2
5
3 G1 Top View
4 S2
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 V Gate-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "80 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . . . . . . . 300 _C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to 200_C Document Number: 70254 S-04031--Rev. D, 04-Jun-01 Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to 150_C Power Dissipation : Per Sidea . . . . . . . . . . . . . . . . . . . . . . . . 325 mW Totalb . . . . . . . . . . . . . . . . . . . . . . . . . . . 650 mW
Notes a. Derate 2.6 mW/_C above 25_C b. Derate 5.2 mW/_C above 25_C www.vishay.com
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2N5564/5565/5566
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N5564 2N5565 2N5566
Parameter Static
Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Currentc Drain-Source On-Resistance Gate-Source Voltagec Gate-Source Forward Voltage
Symbol
Test Conditions
Typa
Min
Max
Min
Max
Min
Max
Unit
V(BR)GSS VGS(off) IDSS IGSS IG rDS(on) V GS VGS(F)
IG = 1 mA, VDS = 0 V VDS = 15 V, ID = 1 nA VDS = 15 V, VGS = 0 V VGS = 20 V, VDS = 0 V TA = 150_C VDG = 15 V, ID = 2 mA TA = 125_C VGS = 0 V, ID = 1 mA VDG = 15 V, ID = 2 mA IG = 2 mA , VDS = 0 V
55 2 20 5 10 3 1 50 1.2 0.7
40 0.5 3
40 0.5 3
40 V 0.5 3
5
30
100 200
5
30
100 200
5
30
100 200
mA pA nA pA nA
100
100
100
W
1
1
1
V
Dynamic
Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Forward Transconductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage Noise Figure gfs gos gfs Ciss Crss en NF VDS = 15 V, ID = 2 mA f = 1 MHz 9 VDS = 15 V, ID = 2 mA f = 1 kHz VDS = 15 V, ID = 2 mA f = 100 MHz 35 8.5 10 7.5 12.5 45 7.5 12.5 45 7.5 12.5 45 mS mS mS 12 pF 2.5 3 3 3 nV/ Hz dB
7
12
7
12
7
VDS = 15 V, ID = 2 mA f = 10 Hz RG = 10 MW
12
50 1
50 1
50 1
Matching
Differential Gate-Source Voltage Gate-Source Voltage Differential Change with Temperature Saturation Drain Current Ratioc |V GS1V GS2| D|V GS1V GS2| DT I DSS1 I DSS2 g fs1 g fs2 CMRR VDG = 15 V, ID = 2 mA VDG = 15 V, ID = 2 mA TA = 55 to 125_C VDS = 15 V, VGS = 0 V 0.98 0.95 5 10 20 mV mV/ _C
10
25
50
1
0.95
1
0.95
1
Transconductance Ratio Common Mode Rejection Ratioc
VDS = 15 V, ID = 2 mA f = 1 kHz VDG = 10 to 20 V ID = 2 mA
0.98
0.95
1
0.90
1
0.90
1
76
dB NCBD
Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%. c. This parameter not registered with JEDEC.
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Document Number: 70254 S-04031--Rev. D, 04-Jun-01
2N5564/5565/5566
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
100 r DS(on) Drain-Source On-Resistance ( W )
On-Resistance and Drain Current vs. Gate-Source Cutoff Voltage
200 rDS @ ID = 1 mA, VGS = 0 IDSS @ VDS = 15 V, VGS = 0 r DS(on) Drain-Source On-Resistance ( W ) I DSS Saturation Drain Current (mA)
100
On-Resistance vs. Drain Current
TA = 25_C
80 IDSS
160
80 VGS(off) = 2 V 60
60
rDS
120
40
80
40
20
40
20
0 0 2 4 6 8 10
0
0 1 10 ID Drain Current (mA) 100
VGS(off) Gate-Source Cutoff Voltage (V)
On-Resistance vs. Temperature
200 r DS(on) Drain-Source On-Resistance ( W ) ID = 1 mA rDS changes 0.7%/_C 160 4 5
Turn-On Switching
tr approximately independent of ID VDG = 5 V, RG = 50 W VGS(L) = 10 V tr 3 td(on) @ ID = 12 mA 2
120 VGS(off) = 2 V 80
40
Switching Time (ns)
1
td(on) @ ID = 3 mA
0 55 35 15 5 25 45 65 85 105 125 TA Temperature (_C)
0 0 2 4 6 8 10
VGS(off) Gate-Source Cutoff Voltage (V)
Forward Transconductance and Output Conductance vs. Gate-Source Cutoff Voltage
50 g fs Forward Transconductance (mS) gfs and gos @ VDS = 15 V VGS = 0 V, f = 1 kHz 40 400 gfs gos 200 24 g os Output Conductance ( mS) 500 30
Turn-Off Switching
td(off) independent of device VGS(off) VDG = 5 V, VGS(L) = 10 V tf Switching Time (ns) 18 VGS(off) = 2 V 12 td(off) 6
30
20
200
10
100
0 0 2 4 6 8 10 VGS(off) Gate-Source Cutoff Voltage (V)
0
0 0 2 4 6 8 10
ID Drain Current (mA)
Document Number: 70254 S-04031--Rev. D, 04-Jun-01
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2N5564/5565/5566
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Output Characteristics
14 VGS(off) = 1.5 V 12 I D Drain Current (mA) 10 0.2 V 8 0.3 V 6 4 2 0.7 V 0 0 4 8 12 16 20 VDS Drain-Source Voltage (V) 0 0 0.4 0.8 1.2 1.6 VGS Gate-Source Voltage (V) 2 0.4 V 0.5 V 0.6 V VGS = 0 V 32 0.1 V I D Drain Current (mA) 24 25_C 16 TA = 55_C 40
Transfer Characteristics
VGS(off) = 2 V VDS = 15 V
8
125_C
Output Characteristics
5 VGS = 0 V 0.1 V 4 I D Drain Current (mA) VGS(off) = 1.5 V 0.2 V 0.3 V Capacitance (pF) 0.4 V 3 0.5 V 2 0.6 V 0.7 V 1 0.8 V 0.9 V 0 0.2 0.4 0.6 0.8 1 6 24 30
Capacitance vs. Gate-Source Voltage
f = 1 MHz VDS = 0 V
18
12 Ciss Crss
0
0 0 4 8 12 16 20
VDS Drain-Source Voltage (V)
VGS Gate-Source Voltage (V)
Gate Leakage Current
10 nA ID = 10 mA IGSS @ 25_C TA = 125_C 100
Common-Gate Input Admittance
VDG = 15 V ID = 10 mA TA = 25_C
1 nA I G Gate Leakage
gig big
1 mA 100 pA (mS) 1 mA 10 pA TA = 25_C 1 pA IG(on) @ ID 0.1 pA 0 6 12 18 24 30 10 mA
10
IGSS @ 25_C
1
0.1 100 200 500 1000
VDG Drain-Gate Voltage (V)
f Frequency (MHz)
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Document Number: 70254 S-04031--Rev. D, 04-Jun-01
2N5564/5565/5566
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Common-Gate Forward Admittance
100 VDG = 15 V ID = 10 mA TA = 25_C gfg 10 (mS) (mS) gfg bfg 1 brg 10 VDG = 15 V ID = 10 mA TA = 25_C
Common-Gate Reverse Admittance
grg 0.1
+grg
1
0.1 100 200 500 1000 f Frequency (MHz)
0.01 100 200 500 1000
f Frequency (MHz)
Common-Gate Output Admittance
100 VDG = 15 V ID = 10 mA TA = 25_C bog 10 (mS) gog 100
Noise Voltage vs. Frequency
VDS = 15 V Hz en Noise Voltage nV / 10 ID = 1 mA
1
ID = 10 mA
0.1 100 200 500 1000
1 10 100 1k f Frequency (Hz) 10 k 100 k f Frequency (MHz)
Output Conductance vs. Drain Current
1000 VGS(off) = 2 V VDS = 15 V f = 1 kHz gfs Forward Transconductance (mS) 100
Transconductance vs. Drain Current
VGS(off) = 2 V VDS = 15 V f = 1 kHz
gos Output Conductance (µS)
TA = 55_C 25_C 10 125_C
TA = 55_C 100 25_C 125_C
10 0.1 1.0 ID Drain Current (mA) Document Number: 70254 S-04031--Rev. D, 04-Jun-01 10
1 0.1 1.0 ID Drain Current (mA) 10
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