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Part: 4N25GV1
Category:
Description: Optocoupler, Phototransistor Output
Company: Vishay Intertechnology
Datasheet: Download 4N25GV1 datasheet File size : 332 kB
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4N25(G)V/ 4N35(G)V Series
Vishay Semiconductors
Optocoupler with Phototransistor Output
Description
The 4N25(G)V/ 4N35(G)V series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements.
Applications
Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation):
14827
D For appl. class I IV at mains voltage 300 V D For appl. class I III at mains voltage 600 V
according to VDE 0884, table 2, suitable for: Switch-mode power supplies, line receiver, computer peripheral interface, microprocessor system interface.
B 6
C 5
E 4
VDE Standards
These couplers perform safety functions according to the following equipment standards:
1 2 A (+) C () 3 n.c.
95 10805
D VDE 0884
Optocoupler for electrical safety requirements
D IEC 950/EN 60950 D VDE 0804 D IEC 65
Safety for mains-operated electronic and related household apparatus Office machines (applied for reinforced isolation for mains voltage 400 VRMS) apparatus and data
Telecommunication processing
Order Instruction
Ordering Code CTR Ranking 4N25V/ 4N25GV1) >20% 4N35V/ 4N35GV1) >100% 1) G = Leadform 10.16 mm; G is not marked on the body Remarks
Rev. A4, 11Jan99
1 (10)
4N25(G)V/ 4N35(G)V Series
Vishay Semiconductors Features
Approvals:
D BSI: BS EN 41003, BS EN 60095 (BS 415),
BS EN 60950 (BS 7002), Certificate number 7081 and 7402
D Rated recurring peak voltage (repetitive) D Creepage current resistance according to
VDE 0303/IEC 112 Comparative Tracking Index: CTI = 275 D Thickness through insulation 0.75 mm General features: VIORM = 600 VRMS
D FIMKO (SETI): EN 60950,
Certificate number 12399
D Underwriters Laboratory (UL) 1577 recognized,
file number E-76222
D VDE 0884, Certificate number 94778
VDE 0884 related features:
D Isolation materials according to UL94-VO D Pollution degree 2
(DIN/VDE 0110 part 1 resp. IEC 664)
D Rated impulse voltage (transient overvoltage)
VIOTM = 6 kV peak D Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV D Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak)
D Climatic classification 55/100/21 (IEC 68 part 1) D Special construction:
Therefore, extra low coupling capacity of typical 0.2 pF, high Common Mode Rejection D Low temperature coefficient of CTR D Coupling System A
Absolute Maximum Ratings
Input (Emitter)
Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions Symbol VR IF IFSM PV Tj Value 5 60 3 100 125 Unit V mA A mW °C
tp 10 ms Tamb 25°C
Output (Detector)
Parameter Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature Test Conditions Symbol VCEO VCEO IC ICM PV Tj Value 32 7 50 100 150 125 Unit V V mA mA mW °C
tp/T = 0.5, tp 10 ms Tamb 25°C
Coupler
Parameter Isolation test voltage (RMS) Total power dissipation Ambient temperature range Storage temperature range Soldering temperature Test Conditions t = 1 min Tamb 25°C Symbol VIO Ptot Tamb Tstg Tsd Value 3.75 250 55 to +100 55 to +125 260 Unit kV mW °C °C °C
2 mm from case, t 10 s
2 (10)
Rev. A4, 11Jan99
4N25(G)V/ 4N35(G)V Series
Vishay Semiconductors Electrical Characteristics (Tamb = 25°C)
Input (Emitter)
Parameter Forward voltage Junction capacitance Test Conditions IF = 50 mA Tamb = 100°C VR = 0, f = 1 MHz Symbol VF Cj Min. Typ. 1.2 50 Max. 1.4 Unit V pF
Output (Detector)
Parameter Collector emitter voltage Emitter collector voltage Collector emitter cut-off current Test Conditions IC = 1 mA IE = 100 mA VCE = 10 V, IF = 0, Tamb = 100°C VCE = 30 V, IF = 0, Tamb = 100°C Symbol VCEO VECO ICEO ICEO Min. 32 7 Typ. Max. Unit V V nA
50 500
mA
Coupler
Parameter Collector emitter saturation voltage Cut-off frequency Coupling capacitance Test Conditions IF = 50 mA, IC = 2 mA VCE = 5 V, IF = 10 mA, RL = 100 f = 1 MHz Symbol VCEsat fc Ck Min. Typ. Max. 0.3 Unit V kHz pF
W
110 1
Current Transfer Ratio (CTR)
Parameter IC/IF Test Conditions VCE = 10 V, IF = 10 mA Type 4N25(G)V 4N35(G)V VCE = 10 V, IF = 10 mA, 4N35(G)V Tamb = 100°C Symbol CTR CTR CTR Min. 0.20 1.00 0.40 Typ. 1 1.5 Max. Unit
Rev. A4, 11Jan99
3 (10)
4N25(G)V/ 4N35(G)V Series
Vishay Semiconductors Maximum Safety Ratings (according to VDE 0884) see figure 1
This device is used for protective separation against electrical shock only within the maximum safety ratings. This must be ensured by using protective circuits in the applications.
Input (Emitter)
Parameters Forward current Test Conditions Symbol Isi Value 130 Unit mA
Output (Detector)
Parameters Power dissipation Test Conditions Tamb 25°C Symbol Psi Value 265 Unit mW
Coupler
Parameters Rated impulse voltage Safety temperature Test Conditions Symbol VIOTM Tsi Value 6 150 Unit kV
Insulation Rated Parameters (according to VDE 0884)
Parameter Test Conditions Partial discharge test voltage 100%, ttest = 1 s Routine test Partial discharge test voltage tTr = 60 s, ttest = 10 s, g g Lot test (sample test) (see figure 2) Insulation resistance VIO = 500 V VIO = 500 V, Tamb = 100°C VIO = 500 V, Tamb = 150°C
(construction test only) 300
V VIOTM t1, t2 = 1 to 10 s t3, t4 = 1 s ttest = 10 s tstres = 12 s VPd
Symbol Vpd VIOTM Vpd RIO RIO RIO
Min. 1.6 6 1.3 1012 1011 109
Typ.
Max.
Unit kV kV kV
W W W
Total Power Dissipation ( mW )
250 200 150 100 50 0 0 25 50 IR-Diode Isi ( mA )
Phototransistor Psi ( mW )
VIOWM VIORM
P
tot
0
t3 ttest t4 t1 tTr = 60 s t2 tstres t
75
100
125
150
13930
94 9182
Tsi Safety Temperature ( °C )
Figure 1. Derating diagram
Figure 2. Test pulse diagram for sample test according to DIN VDE 0884
4 (10)
Rev. A4, 11Jan99
4N25(G)V/ 4N35(G)V Series
Vishay Semiconductors Switching Characteristics of 4N25(G)V
Parameter Delay time Rise time Fall time Storage time Turn-on time Turn-off time Turn-on time Turn-off time Test Conditions VS = 5 V, IC = 5 mA, RL = 100 ( (see figure 3) g )
W
VS = 5 V, IF = 10 mA, RL = 1 kW ( (see figure 4) g )
Symbol td tr tf ts ton toff ton toff
Typ. 4.0 7.0 6.7 0.3 11.0 7.0 25.0 42.5
Unit s s s s s s s s
m m m m m m m m m m m m m m m m
Switching Characteristics of 4N35(G)V
Parameter Delay time Rise time Fall time Storage time Turn-on time Turn-off time Turn-on time Turn-off time
IF 0 RG = 50 tp 0.01 T IF
Test Conditions VS = 5 V, IC = 2 mA, RL = 100 ( (see figure 3) g )
W
VS = 5 V, IF = 10 mA, RL = 1 kW ( (see figure 4) g )
Symbol td tr tf ts ton toff ton toff
Typ. 2.5 3.0 4.2 0.3 <10.0 <10.0 9.0 25.0
Unit s s s s s s s s
+5V IC = 5 mA/ 2 mA; Adjusted through input amplitude
+
W
96 11698
IF 0
tp = 50
ms
Channel I
tp Oscilloscope RL 1 MW CL 20 pF IC 100% 90%
t
50
14950
W
100
W
Channel II
Figure 3. Test circuit, non-saturated operation
IF 0 RG = 50 tp T IF = 10 mA +5V IC 10% 0 tr td ton Oscilloscope RL 1 MW CL 20 pF tp td tr ton (= td + tr) pulse duration delay time rise time turn-on time ts toff ts tf toff (= ts + tf) storage time fall time turn-off time tf
+ 0.01
ms
W
t
tp = 50
Channel I
50
95 10844
W
Channel II 1 kW
Figure 4. Test circuit, saturated operation
Figure 5. Switching times
Rev. A4, 11Jan99
5 (10)
Others parts begin by 4n
4N-1 4N-2
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