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Part: BAS34TAP
Category:
Description: Switching Diode
Company: Vishay Intertechnology
Datasheet: Download BAS34TAP datasheet File size : 256 kB
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Datasheet text preview:
BAS33.BAS34
Vishay Semiconductors
Switching Diode
Features
D Silicon Planar Diodes D Very low reverse current
Applications
Protection circuits, time delay circuits, peak follower circuits, logarithmic amplifiers
94 9367
Order Instruction
Type BAS33 BAS34 Type Differentiation VRRM = 40 V VRRM = 70 V Ordering Code BAS33TAP BAS34TAP Remarks Tape and Reel Tape and Reel
Absolute Maximum Ratings
Tj = 25_C Parameter Reverse voltage voltage Peak forward surge current Forward current Junction temperature Storage temperature range tp=1ms Test Conditions Type BAS33 BAS34 Symbol VR VR IFSM IF Tj Tstg Value 30 60 2 200 200 65...+200 Unit V V A mA °C °C
Maximum Thermal Resistance
Tj = 25_C Parameter Junction ambient Test Conditions l=4 mm, TL=constant Symbol RthJA Value 350 Unit K/W
Document Number 85541 Rev. 3, 14-Feb-01
www.vishay.com 1 (3)
BAS33.BAS34
Vishay Semiconductors Electrical Characteristics
Tj = 25_C Parameter Forward voltage Reverse current current Test Conditions IF=100mA E 300lx, VR E 300lx, VR, Tj=125 °C E 300lx, VR=15 V E 300lx, VR=30 V IR=5mA, tp/T=0.01, tp=0.3ms IR=5mA, tp/T=0.01, tp=0.3ms VR=0, f=1MHz Type Symbol VF IR IR IR IR V(BR) V(BR) CD Min Typ 1 0.5 0.5 40 70 3 Max 1 3 0.5 1 1 Unit V nA mA nA nA V V pF
x x x x
Breakdown voltage voltage Diode capacitance
BAS33 BAS34 BAS33 BAS34
Characteristics (Tj = 25_C unless otherwise specified)
10000 I R Reverse Current ( nA ) VR = V R R M 1000 Scattering Limit 100 IF Forward Current ( mA ) 1000 Tj = 25°C 100 Scattering Limit 10
10
1
1 0
94 9079
0.1 40 80 120 160 200
94 9078
0
0.4
0.8
1.2
1.6
2.0
Tj Junction Temperature ( °C )
VF Forward Voltage ( V )
Figure 1. Reverse Current vs. Junction Temperature
Figure 2. Forward Current vs. Forward Voltage
Dimensions in mm
Cathode Identification 0.55 max.
technical drawings according to DIN specifications 94 9366
1.7 max.
Standard Glass Case 54 A 2 DIN 41880 JEDEC DO 35 Weight max. 0.3 g
26 min.
3.9 max.
26 min.
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Document Number 85541 Rev. 3, 14-Feb-01
BAS33.BAS34
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use VishaySemiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 85541 Rev. 3, 14-Feb-01
www.vishay.com 3 (3)
Others parts begin by ba
BA-1 BA-2 BA-3 BA-4 BA-5 BA-6 BA-7 BA-8 BA-9 BA-10 BA-11 BA-12 BA-13 BA-14 BA-15 BA-16 BA-17 BA-18
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