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Part: BAS381TR
Category:
Description: Small Signal Schottky Barrier Diodes
Company: Vishay Intertechnology
Datasheet: Download BAS381TR datasheet File size : 256 kB
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Datasheet text preview:
BAS381...BAS383
Vishay Semiconductors
Small Signal Schottky Barrier Diodes
Features
D Integrated protection ring against static
discharge
D D D D
Low capacitance Low leakage current Low forward voltage drop Very low switching time
Applications
General purpose and switching Schottky barrier diode HFDetector Protection circuit Diode for low currents with a low supply voltage Small battery charger Power supplies DC / DC converter for notebooks
96 12315
Order Instruction
Type BAS381 BAS382 BAS383 Type Differentiation VR = 40 V VR = 50 V VR = 60 V Ordering Code BAS381TR BAS382TR BAS383TR Remarks Tape and Reel Tape and Reel Tape and Reel
Absolute Maximum Ratings
Tj = 25_C Parameter Reverse voltage g Peak forward surge current Repetitive peak forward current Forward current Junction temperature Storage temperature range tp=1s Test Conditions Type BAS381 BAS382 BAS383 Symbol VR VR VR IFSM IFRM IF Tj Tstg Value 40 50 60 500 150 30 125 65...+150 Unit V V V mA mA mA °C °C
Document Number 85503 Rev. 6, 25-Jun-01
www.vishay.com 1 (4)
BAS381...BAS383
Vishay Semiconductors Maximum Thermal Resistance
Tj = 25_C Parameter Junction ambient Test Conditions on PC board 50 mmx50 mmx1.6 mm Symbol RthJA Value 320 Unit K/W
Electrical Characteristics
Tj = 25_C Parameter Forward voltage g Reverse current Diode capacitance Test Conditions IF=0.1mA IF=1mA IF=15mA VR=VRmax VR=1 V, f=1MHz Type Symbol VF VF VF IR CD Min Typ Max 330 410 1 200 1.6 Unit mV mV V nA pF
Characteristics (Tj = 25_C unless otherwise specified)
14 PR Reverse Power Dissipation ( mW ) VR = 60 V 12 IF Forward Current ( A ) 100 Tj = 150°C 10 Tj = 25°C 1 0.1 0.01 25
15794
1000
10 8 6 4 2 0
RthJA= 540K/W
PRLimit @100%VR
PRLimit @80%VR
50
75
100
125
150
15796
0
0.5
1.0
1.5
2.0
Tj Junction Temperature ( °C )
VF Forward Voltage ( V )
Figure 1. Max. Reverse Power Dissipation vs. Junction Temperature
1000.0 VR = VRRM
Figure 3. Forward Current vs. Forward Voltage
2.0 1.8 CD Diode Capacitance ( pF ) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.1
15797
f=1MHz
I R Reverse Current ( mA )
100.0
10.0
1.0
0.1 25
15795
50
75
100
125
150
1.0
10.0
100.0
Tj Junction Temperature ( °C )
VR Reverse Voltage ( V )
Figure 2. Reverse Current vs. Junction Temperature
Figure 4. Diode Capacitance vs. Reverse Voltage
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Document Number 85503 Rev. 6, 25-Jun-01
BAS381...BAS383
Vishay Semiconductors
0.71 1.3 1.27
16773
Reflow Soldering
1.2 0.152
9.9 25 0.355
0.8
0.8 2.4
0.8
Figure 6.
10 Wave Soldering
16774
2.5 1.4
95 10329
24
0.9
1.0 2.8
0.9
Figure 5. Board for RthJA definition (in mm)
Figure 7.
Dimensions in mm
96 12072
Document Number 85503 Rev. 6, 25-Jun-01
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BAS381...BAS383
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify VishaySemiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
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Document Number 85503 Rev. 6, 25-Jun-01
Others parts begin by ba
BA-1 BA-2 BA-3 BA-4 BA-5 BA-6 BA-7 BA-8 BA-9 BA-10 BA-11 BA-12 BA-13 BA-14 BA-15 BA-16 BA-17 BA-18
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