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Part: BAT15V-02V-GS08
Category:
Description: Schottky Diodes
Company: Vishay Intertechnology
Datasheet: Download BAT15V-02V-GS08 datasheet File size : 82 kB
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Datasheet text preview:
VISHAY
BAT15V-02V
Vishay Semiconductors
Schottky Diodes
Description
Designed for RF-signal level detection and RF-mixer application the low barrier Schottky Diode BAT15V02V can be used in wireless and mobile systems up to 12 GHz. The small space saving SOD523 package is a contribution to the continuously growing integration density on the PCB and the increasing quality standards. On the electrical side the SOD523 package is characterized by low inductance and capacitance.
1
1
2
2
18346
Electrostatic sensitive device. Observe precautions for handling.
Features
· Low barrier schottky diode · Small, space saving SOD523 package with low series inductance · Small capacitance
Mechanical Data
Case: Plastic case (SOD 523) Weight: 1.5 mg Cathode Band Color: Laser marking Packaging Codes/Options: GS08 / 3 k per 7\" reel (8 mm tape), 3 k/Box
Applications
· Mixer application up to 12 GHz · RF-Signal level detection
Parts Table
Part BAT15V-02V Ordering code BAT15V-02V-GS08 U Marking Remar ks Tape and Reel Package SO D- 523
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified Parameter Reverse voltage Forward current Junction temperature Storage temperature range Test condition Sym bol VR IF Tj Tstg Value 4 100 150 -55 to +150 Unit V mA °C °C
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified Parameter Junction soldering point Test condition Sym bol RthJS Value 100 Unit K/W
Document Number 85641 Rev. 1, 24-Sep-03
www.vishay.com 1
BAT15V-02V
Vishay Semiconductors Electrical Characteristics
Tamb = 25 °C, unless otherwise specified Parameter Reverse voltage Forward voltage Diode capacitance Forward resistance Test condition IR = 5 µA IF = 1 mA IF = 10 mA f = 1 MHz, VR = 0 IF = 20 mA to IF = 50 mA, f = 100 MHz Sym bol VR VF VF CD rf 6 M in 4 0.32 0.41 0.35 Typ. Max
VISHAY
Unit V V V pF
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
1000 1000
rf - Forward Resistance ( ) I F - Forward Current ( mA )
f = 100 MHz 100
100 10 1 0.1 0.01
10
1 0.1
18397
1.0
10
100
18398
0
0.2
0.4
0.6
0.8
1.0
IF - Forward Current ( mA )
VF - Forward Voltage ( V )
Figure 1. Forward Resistance vs. Forward Current
Figure 3. Forward Current vs. Forward Voltage
0.40
CD - Diode Capacitance ( pF )
10 f = 1 MHz
0.35
VR - Reverse Voltage ( V )
0.30 0.25 0.20 0.15 0.10 0.05 0 0 1 2 3 4 VR - Reverse V oltage (V) 5
1
0.1
0.01
0.001 0.01
18400
0.1
1
10
100
1000
18399
IR - Reverse Current ( µA )
Figure 2. Diode Capacitance vs. Reverse Voltage
Figure 4. Reverse Voltage vs. Reverse Current
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Document Number 85641 Rev. 1, 24-Sep-03
VISHAY
Package Dimensions in mm
BAT15V-02V
Vishay Semiconductors
ISO Method E
16864
Document Number 85641 Rev. 1, 24-Sep-03
www.vishay.com 3
BAT15V-02V
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements.
VISHAY
2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com 4
Document Number 85641 Rev. 1, 24-Sep-03
Others parts begin by ba
BA-1 BA-2 BA-3 BA-4 BA-5 BA-6 BA-7 BA-8 BA-9 BA-10 BA-11 BA-12 BA-13 BA-14 BA-15 BA-16 BA-17 BA-18
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