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Part: BAT54C-GS08
Category:
Description: Schottky Diodes
Company: Vishay Intertechnology
Datasheet: Download BAT54C-GS08 datasheet File size : 22 kB
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Datasheet text preview:
VISHAY
BAT54 to BAT54S
Vishay Semiconductors
Schottky Diodes
Features
· These diodes feature very low turn-on voltage and fast switching. · These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.
BAT54
3
BAT54A
3
Mechanical Data
Case: SOT-23 Plastic Package Weight: approx. 8 mg Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
18034
Top View
1 2
1
2
BAT54C
3
BAT54S
3
Top View
1 2 1 2
Parts Table
Par t BAT54 BAT54A BAT54C BAT54S Ordering code BAT54-GS18 or BAT54-GS08 BAT54A-GS18 or BAT54A-GS08 BAT54C-GS18 or BAT54C-GS08 BAT54S-GS18 or BAT54S-GS08 L4 L42 L43 L44 Marking Remarks Tape and Reel Tape and Reel Tape and Reel Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified Parameter Repetitive peak reverse voltage Forward continuous current Repetitive peak forward current Surge forward current current Power dissipation
1)
Test condition
Sym bol VRRM IF IFRM
Value 30 2001) 3001) 600
1)
Unit V mA mA mA mW
tp < 1 s
IFSM Pt o t
230
Device on fiberglass substrate, see layout on next page.
Document Number 85508 Rev. 1.4, 19-Nov-03
www.vishay.com 1
BAT54 to BAT54S
Vishay Semiconductors Thermal Characteristics
Tamb = 25 °C, unless otherwise specified Parameter Ther mal resistance junction to ambiant air Junction temperature Storage temperature range
1)
VISHAY
Test condition
S ym b o l RJA Tj = Tstg TS
Value 430
1)
Unit °C/W °C °C
125 to 150 - 65 to + 150
Device on fiberglass substrate, see layout on next page.
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified Parameter Reverse Breakdown voltage Leakage current Forward voltage Test condition IR = 100 µA pulses Pulse test tp < 300 µs, < 2 % at VR = 25 V IF = 0.1 mA, tp < 300 µs, < 2 % IF = 1 mA, tp < 300 µs, < 2 % IF = 10 mA, tp < 300 µs, < 2 % IF = 30 mA, tp < 300 µs, < 2 % IF = 100 mA, tp < 300 µs, < 2 % Capacitance Reverse recovery time VR = 1 V, f = 1 MHz IF = 10 mA through IR = 10 mA to Irr = 1mA, RL = 100 Sym bol V(BR) IR VF VF VF VF VF Ctot t rr M in 30 2 240 320 400 500 10 00 10 5 Typ. Max Unit V µA mV mV mV mV mV pF ns
Layout for RJA test
Thickness: - Fiberglass 0.059 in. (1.5 mm) - Copper leads 0.012 in. (0.3 mm)
7.5 (0.3) 3 (0.12)
1 (0.4) 12 (0.47) 15 (0.59) 0.8 (0.03)
2 (0.8) 1 (0.4) 2 (0.8)
5 (0.2)
1.5 (0.06) 5.1 (0.2) 17451
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Document Number 85508 Rev. 1.4, 19-Nov-03
VISHAY
BAT54 to BAT54S
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
1000 100
IF in mA
TJ = 125°C
TJ = -40°C
10 1 0.1 0.01
T = 25°C J
18025
0
0.2
0.4
0.6 0.8 VF in V
1.0
1.2 1.4
Figure 1. Typical Forward Voltage Forward Current at Various Temperatures
14 12 10
Cin pF
8 6 4 2 0 0 4 8 16 12 VR in V 20 24 28
18026
Figure 2. Typical Capacitance °C vs. Reverse Applied Voltage VR
1000 100
IR in A
TJ = 125° C TJ = 100° C TJ = 75° C
10 1 0.1 0.01 0 5 10
TJ = 50 °C
TJ = 25 C °
18027
15 VR in V
20
25
30
Figure 3. Typical Variation of Reverse Current at Various Temperatures
Document Number 85508 Rev. 1.4, 19-Nov-03
www.vishay.com 3
BAT54 to BAT54S
Vishay Semiconductors Package Dimensions in mm (Inches)
VISHAY
3.1 (.122) 2.8 (.110) 0.4 (.016) 3
1.43 (.056) 1.33 (.052)
Top View
1 0.95 (.037)
2 0.95 (.037)
ISO Method A
max 0.1 (.004)
0.175 (.007)
0.125 (.005)
1.15 (.045)
0.4 (.016)
0.4 (.016)
.102 ( 2 .6) .094 ( 2 .4)
17418
Mounting Pad Layout
0.8 (0.031)
0.9 (0.035)
2.0 (0.079)
0.95 (0.037)
0.95 (0.037)
17417
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0.95 (.037)
Document Number 85508 Rev. 1.4, 19-Nov-03
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
BAT54 to BAT54S
Vishay Semiconductors
1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85508 Rev. 1.4, 19-Nov-03
www.vishay.com 5
Others parts begin by ba
BA-1 BA-2 BA-3 BA-4 BA-5 BA-6 BA-7 BA-8 BA-9 BA-10 BA-11 BA-12 BA-13 BA-14 BA-15 BA-16 BA-17 BA-18
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