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Part: BAV20-TR
Category:
Description: Switching Diode
Company: Vishay Intertechnology
Datasheet: Download BAV20-TR datasheet File size : 67 kB
Request For quote: Find where to buy BAV20-TR
Datasheet text preview:
VISHAY
BAV17...B AV21
Vishay Semiconductors
Switching Diode
Features
· Silicon Epitaxial Planar Diodes
Applications
General purposes
Mechanical Data
Case: DO-35 Glass Case Weight: approx. 300 mg Packaging Codes/Options: D7/10 K per 13" reel (52 mm tape), 20 K/box D8/10 K per Ammo tape (52 mm tape), 20 K/box
94 9367
Parts Table
Part BAV17 BAV18 BAV19 BAV20 BAV21 Type differentiation VRRM = 25 V, Single Diodes VRRM = 60 V, Single Diodes VRRM = 120 V, Single Diodes VRRM = 200 V, Single Diodes VRRM = 250 V, Single Diodes Ordering code BAV17-TAP / BAV17-TR BAV18-TAP / BAV18-TR BAV19-TAP / BAV19-TR BAV20-TAP / BAV20-TR BAV21-TAP / BAV21-TR R e ma r k s Ammopack / Tape and Reel Ammopack / Tape and Reel Ammopack / Tape and Reel Ammopack / Tape and Reel Ammopack / Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified Parameter Peak reverse voltage Test condition Par t BAV17 BAV18 BAV19 BAV20 BAV21 Reverse voltage BAV17 BAV18 BAV19 BAV20 BAV21 Forward current Peak forward surge current Forward peak current Power dissipation tp = 1 s, Tj = 25 °C f = 50Hz S ym b o l VRRM VRRM VRRM VRRM VRRM VR VR VR VR VR IF IFSM IFM PV Value 25 60 120 200 250 20 50 100 150 200 250 1 625 500 Unit V V V V V V V V V V mA A mA mW
Document Number 85543 Rev. 5, 17-Sep-03
www.vishay.com 1
BA V17...BAV 21
Vishay Semiconductors Thermal Characteristics
Tamb = 25 °C, unless otherwise specified Parameter Junction ambient Junction temperature Storage temperature range Test condition l = 4 mm, TL = constant S ym b o l RthJA Tj T stg Value 350 175 - 65 to + 175
VISHAY
Unit K/W °C °C
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified Parameter Forward voltage Reverse current Test condition IF = 100 mA VR = 20 V VR = 50 V VR = 100 V VR = 150 V VR = 200 V Tj = 100 °C, VR = 20 V Tj = 100 °C, VR = 50 V Tj = 100 °C, VR = 100V Tj = 100 °C, VR = 150 V Tj = 100 °C, VR = 200 V Breakdown voltage IR = 100 µA, tp/T = 0.01, tp = 0.3 ms BAV17-TR BAV18-TR BAV19-TR BAV20-TR BAV21-TR BAV17-TR BAV18-TR BAV19-TR BAV20-TR BAV21-TR BAV17-TR BAV18-TR BAV19-TR BAV20-TR BAV21-TR Diode capacitance Differential forward resistance Reverse recovery time VR = 0, f = 1 MHz IF = 10 mA IF = IR = 30 mA, iR = 3 mA, RL = 100 Par t Sy mbol VF IR IR IR IR IR IR IR IR IR IR V(BR) V(BR) V(BR) V(BR) V(BR) CD rf trr 25 60 120 200 250 1. 5 5 50 M in Typ. Max 1 100 100 100 100 100 15 15 15 15 15 Unit V nA nA nA nA nA µA µA µA µA µA V V V V V pF ns
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Document Number 85543 Rev. 5, 17-Sep-03
VISHAY
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
rf - Differential Forward Resistance ( )
BAV17...B AV21
Vishay Semiconductors
1000
I R - Reverse Current ( µ A )
1000
100 10 1 0.1 0.01 0 40 80 120 160 200 V R = VRRM Scattering Limit
100
Tj = 25° C 10
1 0.1
1
10
100
94 9084
Tj - Junction Temperature ( ° C )
94 9089
I F - Forward Current ( mA )
Figure 1. Reverse Current vs. Junction Temperature
Figure 3. Differential Forward Resistance vs. Forward Current
1000
I F - Forward Current ( mA )
Tj = 25° C 100 Scattering Limit 10
1
0.1 0
94 9085
0.4
0.8
1.2
1.6
2.0
V F - Forward Voltage ( V )
Figure 2. Forward Current vs. Forward Voltage
Package Dimensions in mm
Cathode Identification " 0.55 max.
technical drawings according to DIN specifications
" 1.7 max.
16924
26 min.
3.9 max.
26 min.
Document Number 85543 Rev. 5, 17-Sep-03
www.vishay.com 3
BA V17...BAV 21
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements.
VISHAY
2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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Document Number 85543 Rev. 5, 17-Sep-03
Others parts begin by ba
BA-1 BA-2 BA-3 BA-4 BA-5 BA-6 BA-7 BA-8 BA-9 BA-10 BA-11 BA-12 BA-13 BA-14 BA-15 BA-16 BA-17 BA-18
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