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Part: BAV203
Category:
Description: Switching Diode
Company: Vishay Intertechnology
Datasheet: Download BAV203 datasheet File size : 67 kB
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Datasheet text preview:
BAV200...BAV203
Vishay Semiconductors
Switching Diode
Features
D Silicon Epitaxial Planar Diodes
Applications
General purposes
96 12009
Order Instruction
Type BAV200 BAV201 BAV202 BAV203 Type Differentiation VRRM = 60 V VRRM = 120 V VRRM = 200 V VRRM = 250 V Ordering Code BAV200GS08 BAV201GS08 BAV202GS08 BAV203GS08 Remarks Tape and Reel Tape and Reel Tape and Reel Tape and Reel
Absolute Maximum Ratings
Tj = 25_C Parameter Peak reverse voltage reverse voltage Test Conditions Type BAV200 BAV201 BAV202 BAV203 BAV200 BAV201 BAV202 BAV203 Symbol VRRM Value 60 120 200 250 50 100 150 200 250 1 625 175 65...+175 Unit V V V V V V V V mA A mA °C °C
Reverse voltage voltage Forward current Peak forward surge current Forward peak current Junction temperature Storage temperature range
VR IF IFSM IFM Tj Tstg
tp=1s, Tj=25 °C f=50Hz
Document Number 85544 Rev. 4, 14-Feb-01
www.vishay.com 1 (4)
BAV200...BAV203
Vishay Semiconductors Maximum Thermal Resistance
Tj = 25_C Parameter Junction ambient Test Conditions on PC board 50 mmx50 mmx1.6 mm Symbol RthJA Value 500 Unit K/W
Electrical Characteristics
Tj = 25_C Parameter Forward voltage Test Conditions IF=100mA VR=50 V VR=100 V VR=150 V VR=200 V Tj=100 °C, VR= 50 V Tj=100 °C, VR= 100 V Tj=100 °C, VR= 150 V Tj=100 °C, VR= 200 V IR=100 A, tp/T=0.01, tp=0.3ms VR=0, f=1MHz IF=10mA IF=IR=30mA, iR=3mA, RL=100 Type BAV200 BAV201 BAV202 BAV203 BAV200 BAV201 BAV202 BAV203 BAV200 BAV201 BAV202 BAV203 Symbol VF IR IR IR IR IR IR IR IR V(BR) V(BR) V(BR) V(BR) CD rf Min Typ Max 1 100 100 100 100 15 15 15 15 Unit V nA nA nA nA A A A A V V V V pF
Reverse current current
m m m m
Breakdown voltage voltage Diode capacitance Differential forward resistance Reverse recovery time
m
60 120 200 250 1.5 5 50
W
W
ns
trr
Characteristics (Tj = 25_C unless otherwise specified)
1000 100 Scattering Limit 10 IF Forward Current ( mA ) I R Reverse Current ( A ) 1000 Tj = 25°C 100 Scattering Limit 10
m
1 VR = V R R M
0.1 0.01 0 40 80 120
1
0.1 160 200
94 9085
0
0.4
0.8
1.2
1.6
2.0
94 9084
Tj Junction Temperature ( °C )
VF Forward Voltage ( V )
Figure 1. Reverse Current vs. Junction Temperature
Figure 2. Forward Current vs. Forward Voltage
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Document Number 85544 Rev. 4, 14-Feb-01
BAV200...BAV203
Vishay Semiconductors
rf Differential Forward Resistance ( ) 1000
W
100
Tj = 25°C 10
1 0.1
94 9089
1
10
100
IF Forward Current ( mA )
Figure 3. Differential Forward Resistance vs. Forward Current
Dimensions in mm
96 12071
Document Number 85544 Rev. 4, 14-Feb-01
www.vishay.com 3 (4)
BAV200...BAV203
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
www.vishay.com 4 (4)
Document Number 85544 Rev. 4, 14-Feb-01
Others parts begin by ba
BA-1 BA-2 BA-3 BA-4 BA-5 BA-6 BA-7 BA-8 BA-9 BA-10 BA-11 BA-12 BA-13 BA-14 BA-15 BA-16 BA-17 BA-18
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