Details, datasheet, quote on part number: BAV301-TR
PartBAV301-TR
CategoryDiscrete => Diodes => General Purpose Diodes => 5753309
Title0.25 A, 120 V, SILICON, SIGNAL DIODE
Description
CompanyVishay Intertechnology
DatasheetDownload BAV301-TR datasheet
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Specifications 
PackageMicroMELF, HERMETIC SEALED, GLASS, MICROMELF-2
Number of Diodes1
IF250 mA
RoHS CompliantRoHS

 

Features, Applications

Small Signal Switching Diodes, High Voltage
Features

Silicon Epitaxial Planar Diodes Saving space Hermetic sealed parts Fits onto / SOT-23 footprints Electrical data identical with the devices / BAV200...BAV203

Applications

Case: MicroMELF Glass Case Weight: approx. 12 mg Cathode Band Color: Black Packaging Codes/Options: 10 k per 13" reel (8 mm tape), 10 k/box 2.5 k per 7" reel (8 mm tape), 12.5 k/box

Part BAV302 BAV303 Type differentiation VRRM 60 V VRRM 120 V VRRM 200 V VRRM 250 V Ordering code or BAV303-GS08 Remarks Tape and Reel Tape and Reel Tape and Reel Tape and Reel

Tamb = 25 C, unless otherwise specified Parameter Peak reverse voltage Test condition Part BAV302 BAV303 Reverse voltage BAV302 BAV303 Forward current Peak forward surge current Forward peak current 50 Hz Symbol VRRM VR IF IFSM IFM Value Unit A mA

Tamb = 25 C, unless otherwise specified Parameter Junction ambient Test condition mounted on epoxy-glass hard tissue, Fig. 35 m copper clad, 0.9 mm2 copper area per electrode Junction temperature Storage temperature range Tj Tstg + 175 Symbol RthJA Value 500

Tamb = 25 C, unless otherwise specified Parameter Forward voltage Reverse current Test condition = 100 C, = 100 C, = 100 C, = 100 C, = 200V Breakdown voltage = 100 A, tp/T = 100 A, tp/T BAV302 BAV303 Diode capacitance Differential forward resistance Reverse recovery time = 1 MHz = 30 mA, = 3 mA, = 100 Part Symbol VF IR V(BR) CD rf trr Min Typ. Max Unit pF ns

Typical Characteristics (Tamb 25 C unless otherwise specified)
Fig. 3 Differential Forward Resistance vs. Forward Current

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