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Part: BAV99
Category:
Description: Dual Switching Diode
Company: Vishay Intertechnology
Datasheet: Download BAV99 datasheet File size : 66 kB
Request For quote: Find where to buy BAV99
Datasheet text preview:
VISHAY
B AV 9 9
Vishay Semiconductors
Dual Switching Diode
Features
· Fast switching speed · High conductance · Surface mount package ideally suited for automatic insertion · Connected in series
3
1
2
18109
Mechanical Data
Case: SOT-23 Plastic Package Weight: approx. 8 mg
Marking: JE Packaging Codes/Options: E8 / 10k per 13" reel (8 mm tape), 30k/box E9 / 3k per 7" reel (8 mm tape), 30k/box
Parts Table
Part BAV99 Type differentiation Dual Serial Ordering code BAV99 R e ma r k s Tape and Reel Package SOT-23
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified Parameter Non repetitive peak reverse voltage Repetitive peak reverse voltage = Working peak reverse voltage = DC Blocking voltage Peak forward surge current Average forward current tp = 1s tp = 1 µs half wave rectification with resistive load and f 50 MHz, on ceramic substrate 10 mm x 8 mm x 0.7 mm on ceramic substrate 10 mm x 8 mm x 0.7 mm on ceramic substrate 10 mm x 8 mm x 0.7 mm Test condition S ym b o l VRM VRRM = V RWM = VR IFSM IFSM IFAV Value 100 70 1 4.5 150 Unit V V A A mA
Forward current Power dissipation
IF Ptot
250 300
mA mW
Maximum Thermal Resistance
Tamb = 25 °C, unless otherwise specified Parameter Junction ambient Junction and storage temperature range Test condition on ceramic substrate 10 mm x 8 mm x 0.7 mm S ym b o l RthJA Tj = Tstg Value 430 - 55 to + 150 Unit K/W °C
Document Number 85718 Rev. 6, 15-Jul-03
www.vishay.com 1
BA V99
Vishay Semiconductors Electrical Characteristics
Tamb = 25 °C, unless otherwise specified Parameter Forward voltage Test condition IF = 1 mA IF = 10 mA IF = 50 mA IF = 150 mA Reverse current VR = 70 V VR = 70 V, Tj = 150 °C VR = 25 V, Tj = 150 °C Diode capacitance Reverse recovery time VR = 0, f = 1 MHz IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Sy mbol VF VF VF VF IR IR IR CD trr Min Typ. Max 715 855 1 1. 25 2.5 50 30 1.5 6
VISHAY
Unit mV mV V V µA µA µA pF ns
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
1000
IF Forward Current ( mA)
100 Tj =100°C 10 Tj =25°C 1 0.1
0.01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
14356
V F Forward V ltage ( V ) o
Figure 1. Forward Current vs. Forward Voltage
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Document Number 85718 Rev. 6, 15-Jul-03
VISHAY
Package Dimensions in mm
B AV 9 9
Vishay Semiconductors
top view
14373
Document Number 85718 Rev. 6, 15-Jul-03
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BA V99
Vishay Semiconductors Layout for RTheta;JA test
Thickness: Fiberglass 0.059 in. (1.5 mm) Copper leads 0.012 in. (0.3 mm)
0.30 (7.5) 0.12 (3)
VISHAY
.04 (1)
.08 (2) .04 (1) .08 (2)
0.59 (15) 0.47 (12)
0.03 (0.8)
0.2 (5)
0.06 (1.5) 0.20 (5.1)
17451
Dimensions in inches (millimeters)
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Document Number 85718 Rev. 6, 15-Jul-03
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements.
B AV 9 9
Vishay Semiconductors
2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85718 Rev. 6, 15-Jul-03
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Others parts begin by ba
BA-1 BA-2 BA-3 BA-4 BA-5 BA-6 BA-7 BA-8 BA-9 BA-10 BA-11 BA-12 BA-13 BA-14 BA-15 BA-16 BA-17 BA-18
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