Details, datasheet, quote on part number: BAY135
PartBAY135
Category
DescriptionSwitching Diode
CompanyVishay Intertechnology
DatasheetDownload BAY135 datasheet
Cross ref.Similar parts: BAV20
Quote
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Features, Applications

Features
D Silicon Planar Diode D Very low reverse current
Applications
Type BAY135 Type Differentiation VRRM 140 V Ordering Code BAY135TAP Remarks Ammopack

= 25_C Parameter Test Conditions Peak reverse voltage, non repetitive Repetitive peak reverse voltage Reverse voltage Peak forward surge current tp=1ms Average forward current f=50Hz Junction temperature Storage temperature range Type Symbol VRSM VRRM VR IFSM IFAV Tj Tstg Value Unit mA C

= 25_C Parameter Junction ambient Test Conditions l=4 mm, TL=constant Symbol RthJA Value 350 Unit K/W

= 25_C Parameter Forward voltage Reverse current Breakdown voltage Diode capacitance Test Conditions E 300lx, VR, VR=0, f=1MHz Type Symbol VF IR V(BR) CD Min Typ Max Unit V pF

R Reverse Current VR = VRRM 1000 Scattering Limit IF Forward Current 25C 100 Scattering Limit 10

Standard Glass Case A 2 DIN 41880 JEDEC DO 35 Weight max. 0.3 g
Vishay Semiconductors Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs The Montreal Protocol 1987 ) and its London Amendments 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: Fax number:


 

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