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Part: BB8040GS08
Category:
Description: Dual Varicap Diode
Company: Vishay Intertechnology
Datasheet: Download BB8040GS08 datasheet File size : 142 kB
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Datasheet text preview:
BB804
Vishay Semiconductors
Dual Varicap Diode
Features
D Silicon Epitaxial Planar Diode D Common cathode
Applications
Tuning of separate resonant circuits, pushpull circuits in FM range, especially for car radios
94 8550
Order Instruction
Type BB804 BB8040 BB8041 BB8042 BB8043 BB8044 Type Differentiation VRRM = 20 V, CD 4247, 5pF VRRM = 20 V, CD 4243, 5pF VRRM = 20 V, CD 4344, 5pF VRRM = 20 V, CD 4445, 5pF VRRM = 20 V, CD 4546, 5pF VRRM = 20 V, CD 4647, 5pF Ordering Code BB804GS08 BB8040GS08 BB8041GS08 BB8042GS08 BB8043GS08 BB8044GS08 Remarks Tape and Reel Tape and Reel Tape and Reel Tape and Reel Tape and Reel Tape and Reel
Absolute Maximum Ratings
Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Forward current Junction temperature Storage temperature range Test Conditions Type Symbol VRRM VR IF Tj Tstg Value 20 18 50 100 55...+150 Unit V V mA °C °C
Document Number 85554 Rev. 4, 14-Feb-01
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BB804
Vishay Semiconductors Electrical Characteristics
Tj = 25_C Symbol Min IR Reverse current current IR Diode capacitance 1) CD 42 Group 0 CD 42 Group 1 CD 43 Diode capacitance VR=2 V, f=1MHz Group 2 CD 44 Group 3 CD 45 Group 4 CD 46 Capacitance ratio VR=2 V,8 V, f=100MHz CD2/ CD8 1.65 Series resistance CD=38pF, f=100MHz rs Figure of merit CD=38pF, f=100MHz Q 100 1) A packing unit (reel) contains diodes from one capacitance group only. Delivery of single capacitance groups available only on request. Parameter Test Conditions VR=16 V VR=16 V, Tj=60 °C VR=2 V, f=1MHz Type Typ Max 20 0.2 47.5 43.5 44.5 45.5 46.5 47.5 1.75 0.4 Unit nA A pF pF pF pF pF pF
m
0.3 140
W
Dimensions in mm
14384
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Document Number 85554 Rev. 4, 14-Feb-01
BB804
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 85554 Rev. 4, 14-Feb-01
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