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Part: BFR193TF
Category:
Description: Silicon NPN Planar RF Transistor
Company: Vishay Intertechnology
Datasheet: Download BFR193TF datasheet File size : 125 kB
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VISHAY
BFR1 93TF
Vishay Semiconductors
Silicon NPN Planar RF Transistor
Description
The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous packages. In addition to space savings, the SOT490 provides a higher level of reliability than other 3-pin packages, such as more resistance to moisture. Due to the short length of its leads the SOT490 is also reducing package inductances resulting in some better electrical performance. All of these aspects make this device an ideal choice for demanding RF applications.
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16867
Electrostatic sensitive device. Observe precautions for handling.
Features
· Low noise figure · High transition frequency fT = 8 GHz · Excellent large-signal behaviour amplifiers.
Mechanical Data
Typ: BFR193TF Case: Plastic case (SOT 490) Weight: 2.5 mg Pinning: 1 = Collector, 2 = Base, 3 = Emitter
Applications
For low noise and high gain applications such as power amplifiers up to 2 GHz and for linear broadband
Parts Table
Par t BFR193TF RC Mar king SOT490 Package
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Tamb 45 °C Test condition Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 20 12 2 80 420 150 -65 to +150 Unit V V V mA mW °C °C
Maximum Thermal Resistance
Parameter Junction ambient
1) 1)
Test condition
Symbol RthJA
Value 250
Unit K/W
on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 µm Cu
Electrical DC Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter Collector-emitter cut-off current Test condition VC E = 20 V, VBE = 0 Symbol ICES Min Typ. Max 100 Unit µA
Document Number 85103 Rev. 2, 23-Sep-02
www.vishay.com 1
BFR193TF
Vishay Semiconductors
Parameter Collector-base cut-off current E mitter-base cut-off current Collector-emitter breakdown voltage Collector-emitter saturation voltage DC forward current transfer ratio Test condition VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 IC = 1 mA, IB = 0 IC = 50 mA, IB = 5 mA VCE = 8 V, IC = 30 mA Symbol ICBO IEBO V(BR )CEO VCEsat h FE 50 12 0.1 100 0.5 150 Min Typ. Max 100 1
VISHAY
Unit nA µA V V
Electrical AC Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter Transition frequency Collector-base capacitance Collector-emitter capacitance E mitter-base capacitance Noise figure Test condition VCE = 8 V, IC = 50 mA, f = 1 GHz VCB = 10 V, f = 1 MHz VCE = 10 V, f = 1 MHz VEB = 0.5 V, f = 1 MHz VCE = 8 V, IC = 10 mA, ZS = ZSopt, ZL = 50 , f = 900 MHz VCE = 8 V, IC = 10 mA, ZS = ZSopt, ZL = 50 , f = 900 MHz Power gain VCE = 8 V, IC = 30 mA, ZS = ZSopt, ZL = 50 , f = 900 MHz VCE = 8 V, IC = 30 mA, ZS = ZSopt, ZL = 50 , f = 2 GHz Transducer gain VCE = 8 V, IC = 30 mA, f = 900 MHz, ZO = 50 VCE = 8 V, IC = 30 mA, f = 2 GHz, ZO = 50 Third order intercept point VCE = 8 V, IC = 50 mA, f = 900 MHz Symbol fT Ccb Cce Ce b F F Gp e Gp e |S21e|2 |S21e|2 IP3 Min Typ. 7.5 0.6 0.25 1.6 1.2 2.1 15.5 9.5 14 7.5 34 Max Unit GHz pF pF pF dB dB dB dB dB dB dBm
Document Number 85103 Rev. 2, 23-Sep-02
www.vishay.com 2
VISHAY
Package Dimensions in mm or Inches (mm)
BFR1 93TF
Vishay Semiconductors
ISO Method E
16866
Document Number 85103 Rev. 2, 23-Sep-02
www.vishay.com 3
BFR193TF
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements.
VISHAY
2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Seminconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85103 Rev. 2, 23-Sep-02
www.vishay.com 4
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