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Part: CNY17-3
Category:
Description: Optocoupler, Phototransistor Output, With Base Connection
Company: Vishay Intertechnology
Datasheet: Download CNY17-3 datasheet File size : 371 kB
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Datasheet text preview:
CNY17
TRIOS Phototransistor Optocoupler
FEATURES · High Current Transfer Ratio CNY17-1, 40 to 80% CNY17-2, 63 to 125% CNY17-3, 100 to 200% CNY17-4, 160 to 320% · Breakdown Voltage, 5300 VRMS · Field-Effect Stable by TRIOS--TRansparent IOn Shield · Long Term Stability · Industry Standard Dual-in-Line Package · Underwriters Lab File #E52744 · V VDE #0884, Available with Option 1
DE
Dimensions in inches (mm)
3 .248 (6.30) .256 (6.50) 4 5 6 2 1 pin one ID
Anode 1 Cathode 2 NC 3
.300 (7.62) typ.
6 5 4
Base Collector Emitter
.335 (8.50) .343 (8.70) .039 (1.00) Min. 4° typ. .018 (0.45) .022 (0.55) .048 (1.22) .022 (0.55)
.130 (3.30) .150 (3.81) 18° .031 (0.80) min. 3°9° .031 (0.80) .035 (0.90) .100 (2.54) typ. .010 (.25) typ. .300.347 (7.628.81) .114 (2.90) .130 (3.0)
DESCRIPTION The CNY17 is an optically coupled pair consisting of a Gallium Arsenide infrared emitting diode optically coupled to a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The CNY17 can be used to replace relays and transformers in many digital interface applications, as well as analog applications such as CRT modulation. Maximum Ratings (TA=25°C) Emitter Reverse Voltage ............ 6.0 V Forward Current ......... 60 mA Surge Current (t10 µs)......... 2.5 A Power Dissipation.....100 mW Detector Collector-Emitter Breakdown Voltage.....70 V Emitter-Base Breakdown Voltage .......... 7.0 V Collector Current ........ 50 mA Collector Current (t <1.0 ms)............ 100 mA Power Dissipation.....150 mW Package Isolation Test Voltage (between emitter & detector referred to climate DIN 50014, part 2, Nov. 74) (t=1 sec)..........5300 VRMS Creepage Distance ......... 7.0 mm Clearance Distance......... 7.0 mm Isolation Thickness between Emitter and Detector..... 0.4 mm Comparative Tracking Index per DIN IEC 112/ VDE0303, part 1 .......... 175 Isolation Resistance VIO=500 V, TA=25°C...... 1012 VIO=500 V, TA=100°C.... 1011 Storage Temperature..........55°C to +150°C Operating Temperature ...... 55°C to +100°C Junction Temperature..100°C Soldering Temperature (max. 10 s, dip soldering: distance to seating plane 1.5 mm) ......... 260°C
Document Number: 83606 Revision 17-August-01
Characteristics (TA=25°C)
Parameter Emitter Forward Voltage Breakdown Voltage Reverse Current Capacitance Thermal Resistance Detector Capacitance Symbol Values Unit Condition
VF VBR IR
--
1.25 (1.65)
V
IF = 60 mA IR = 10 mA
6.0
0.01 (10) 25 750 µA pF K/W
VR = 6.0 V VR=0 V, f=1.0 MHz
--
Rthjamb
CCE CCB CEB Rthjamb
5.2 6.5 7.5 500
pF
VCE=5.0 V, f=1.0 MHz VCB=5.0 V, f=1.0 MHz VEB=5.0 V, f=1.0 MHz
--
Thermal Resistance Package Collector-Emitter Saturation Voltage Coupling Capacitance
K/W
VCEsat CC
0.25 (0.4) 0.6
V pF
IF =10 mA, IC=2.5 mA
--
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268
Current Transfer Ratio and Collector-Emitter Leakage Current by dash number (TA=25°C)
-1 -2 63-125 45 (>22) 2.0 ( 50) -3 100-200 70 (>34) 5.0 ( 100) -4 160-320 90 (>56) 5.0 ( 100) Unit % % nA
Figure 3. Current transfer ratio versus diode current (TA=25°C, VCE=5.0 V) IC/IF=f (IF)
IC/IF at VCE=5.0 V (IF=10 mA) IC/IF at VCE=5.0 V (IF=1.0 mA)
Collector-Emitter Leakage Current (VCE=10 V) (ICEO)
40-80 30 (>13) 2.0 ( 50)
Figure 1. Linear Operation (without saturation)
IF RL=75 IC VCC=5 V
1 2 3 4
47
IF=10 mA, VCC=5.0 V, TA=25°C
Load Resistance Turn-On Time Rise Time Turn-Off Time Fall Time Cut-off Frequency
RL tON tr tOFF
tf fCO
75 3.0 2.0 2.3 2.0 250
W
Figure 4. Current transfer ratio versus diode current (TA=0°C, VCE=5.0 V) IC/IF=f (IF)
µs µs µs µs
kHz
1 2 3 4
Figure 2. Switching Operation (with saturation)
IF 1 K VCC=5 V
47
-1 (IF=20 mA)
Turn-On Time Rise Time Turn-Off Time Fall Time
-2 and -3 (IF=10 mA)
4.2 3.0 23 14
-4 (IF=5.0 mA)
6.0 4.6 25 15 µs µs µs µs
Figure 5. Current transfer ratio versus diode current (TA=25°C, VCE=5.0 V) IC/IF=f (IF)
tON tf tOFF tf
3.0 2.0 18 11
1 2 3 4
Document Number: 83606 Revision 17-August-01
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269
Figure 6. Current transfer ratio versus diode current (TA=50°C) VCE=5.0 V, IC/IF=f (IF)
Figure 9. Transistor characteristics (B=550) CNY17-3, -4 IC=f(VCE) (TA=25°C, IF=0)
Figure 12. Collector emitter off-state current ICEO=f (V, T) (TA=25°C, IF=0)
1 2 3 4
Figure 7. Current transfer ratio versus diode current (TA=75°C) VCE=5.0 V
Figure 10. Output characteristics CNY17-3, -4 (TA=25°C) IC=f(VCE)
Figure 13. Saturation voltage versus collector current and modulation depth CNY17-1 VCEsat=f (IC) (TA=25°C)
1 2 3 4
Figure 8. Current transfer ratio versus temperature (IF=10 mA, VCE=5.0 V) IC/IF=f (T)
Figure 11. Forward voltage VF=f (IF)
Figure 14. Saturation voltage versus collector current and modulation depth CNY17-2 VCEsat=f (IC) (TA=25°C)
4 3 2 1
Document Number: 83606 Revision 17-August-01
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270
Figure 15. Saturation voltage versus collector current and modulation depth CNY17-3 VCEsat=f (IC) (TA=25°C)
Figure 17. Permissible pulse load D=parameter, TA=25°C, IF=f (tp)
Figure 19. Permissible forward current Ptot=f (TA)
Figure 16. Saturation voltage versus collector current and modulation depth CNY17-4 VCEsat=f (IC) (TA=25°C)
Figure 18. Permissible power dissipation transistor and diode Ptot=f (TA)
Document Number: 83606 Revision 17-August-01
www.vishay.com
271
Others parts begin by cn
CN-1 CN-2
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