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Details, datasheet, quote on part number:DG2016DQ
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Datasheet text preview:
DG2016/DG2026
New Product
Vishay Siliconix
High-Bandwidth, Low Voltage, Dual SPDT Analog Switchs
FEATURES
D Single Supply (1.8 V to 5.5 V) D Low On-Resistance - rON: 2.4 W D Crosstalk and Off Isolation: -81 dB @ 1 MHz D MSOP-10 Package
BENEFITS
D D D D D Reduced Power Consumption High Accuracy Reduce Board Space Low-Voltage Logic Compatible High Bandwidth
APPLICATIONS
D D D D D D Cellular Phones Speaker Headset Switching Audio and Video Signal Routing PCMCIA Cards Low-Voltage Data Acquisition ATE
DESCRIPTION
The DG2016/DG2026 are monolithic CMOS dual single-pole/double-throw (SPDT) analog switchs. They are specifically designed for low-voltage, high bandwidth applications. The DG2016/DG2026's on-resistance (3 W @ 2.7 V), matching and flatness are guaranteed over the entire analog voltage range. Wide dynamic performance is achieved with better than 80 dB for both cross-talk and off-isolation at 1 MHz. Both SPDT's operate with independent control logic, conduct equally well in both directions and block signals up to the power supply guaranteed. level when off. Break-before-make is
With fast switching speeds, low on-resistance, high bandwidth, and low charge injection, the DG2016/DG2026 are ideally suited for audio and video switching with high linearity.
Built on Vishay Siliconix's low voltage CMOS technology, the DG2016/DG2026 contain an epitaxial layer which prevents latch-up.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG2016DQ--MSOP-10
IN1 NO1 GND NO2 IN2 1 2 3 4 5 Top View 10 9 8 7 6 COM1 NC1 V+ NC2 COM2
TRUTH TABLE Logic
0 1
NC1 and NC2
ON OFF
NO1 and NO2
OFF ON
ORDERING INFORMATION
DG2026DQ--MSOP-10
IN1 NC1 GND NC2 IN2 1 2 3 4 5 Top View 10 9 8 7 6 COM1 NO1 V+ NO2 COM2
Temp Range
-40 to 85°C
Package
MSOP-10
Part Number
DG2016DQ DG2026DQ
Document Number: 72030 S-31575--Rev. B, 11-Aug-03
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DG2016/DG2026
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Reference to GND V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +6 V IN, COM, NC, NOa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (V+ + 0.3 V) Continuous Current (Any terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . "50 mA Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "200 mA (Pulsed at 1 ms, 10% duty cycle) Storage Temperature (D Suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150°C Power Dissipation (Packages)b MSOP-10c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 320 mW Notes: a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 4.0 mW/_C above 70_C
New Product
SPECIFICATIONS (V+ = 3 V)
Test Conditions Otherwise Unless Specified Parameter Analog Switch
Analog Signal Ranged On-Resistance rON Flatness rON Match Between Channels Switch Off Leakage Current f VNO, VNC, VCOM rO N rO N Flatness DrO N INO(off), INC(off) ICOM(off) Channel-On Leakage Current f ICOM(on) V+ = 2.7 V, VCOM = 0.2 V/1.5 V INO, INC = 10 mA V+ = 2.7 V VCOM = 0 to V+ INO, INC = 10 mA V+, V+ = 3.3 V, VNO, VNC = 0.3 V/3 V VCOM = 3 V/0.3 V V+ = 3.3 V, VNO, VNC = VCOM = 0.3 V/3 V Full Room Full Room Room Room Full Room Full Room Full -1 - 10 -1 - 10 -1 - 10 0 3.0 V+ 4.8 5.3 1.6 0.2 1 10 1 10 1 10 nA W V
Limits
- 40 to 85_C
Symbol
V+ = 3 V, "10%, VIN = 0.4 or 2.0 Ve
Tempa
Minb
Typc
Maxb
Unit
Digital Control
Input High Voltaged Input Low Voltage Input Capacitance Input Current
VINH
Full Full Full VIN = 0 or V+ Full
1.6 0.4 5 1 1
VINL
Cin
V pF mA
IINL or IINH
Dynamic Characteristics
Turn-On Time Turn-Off Time Break-Before-Make Time Charge Injectiond Off-Isolationd Crosstalkd NO, NC Off Capacitanced Channel-On Capacitanced tON VNO or VNC = 2.0 V, RL = 50 W, CL = 35 pF 20V W tOFF td QINJ OIRR XTALK CNO(off) CNC(off) CNO(on) CNC(on) VIN = 0 or V+ f = 1 MHz V+, VNO or VNC = 2.0 V, RL = 50 W, CL = 35 pF CL = 1 nF, VGEN = 0 V, RGEN = 0 W RL = 50 W CL = 5 pF f = 1 MHz W, pF, Room Full Room Full Full Room Room Room Room Room Room Room 1 38 - 78 - 82 15 15 49 45 pF pC dB 28 13 53 59 38 38 ns
Power Supply
Power Supply Current Notes: a. b. c. d. e. f. Room = 25°C, Full = as determined by the operating suffix. Typical values are for design aid only, not guaranteed nor subject to production testing. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. Guarantee by design, nor subjected to production test. VIN = input voltage to perform proper function. Guaranteed by 5-V leakage testing, not production tested. Document Number: 72030 S-31575--Rev. B, 11-Aug-03 I+ VIN = 0 or V+ Full 0.01 1.0 mA
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DG2016/DG2026
New Product
SPECIFICATIONS (V+ = 5 V)
Test Conditions Otherwise Unless Specified Parameter Analog Switch
Analog Signal Ranged On-Resistance rON Flatness rON Match Between Channels Switch Off Leakage Current VNO, VNC, VCOM rO N rO N Flatness DrO N INO(off), INC(off) ICOM(off) Channel-On Leakage Current ICOM(on) V+ = 5.5 V VNO, VNC = 1 V/4.5 V, VCOM = 4.5 V/1 V V+ = 5.5 V, VNO, VNC = VCOM = 1 V/4.5 V V+ = 4.5 V, VCOM = 3 V, INO, INC = 10 mA V+ = 4.5 V, VCOM = 0 to V+, INO, INC = 10 mA Full Room Full Room Room Room Full Room Full Room Full -1 - 10 -1 - 10 -1 - 10 0 2.4 V+ 4.0 4.3 1.2 0.2 1 10 1 10 1 10 nA W V
Vishay Siliconix
Limits
- 40 to 85_C
Symbol
V+ = 5 V, "10%, VIN = 0.8 or 2.4 Ve
Tempa
Minb
Typc
Maxb
Unit
Digital Control
Input High Voltaged Input Low Voltage Input Capacitance Input Current
VINH
Full Full Full VIN = 0 or V+ Full
2.0 0.8 5 1 1
VINL
Cin
V pF mA
IINL or IINH
Dynamic Characteristics
Turn-On Time Turn-Off Time Break-Before-Make Time Charge Injectiond Off-Isolationd Crosstalkd Source-Off Capacitanced Channel-On Capacitanced tON tOFF td QINJ OIRR XTALK CNO(off) CNC(off) CNO(on) CNC(on) VIN = 0 or V+ f = 1 MHz V+, VNO or VNC = 3 V RL = 50 W CL = 35 pF V, W, VNO or VNC = 3 V, RL = 50 W, CL = 35 pF CL = 1 nF, VGEN = 0 V, RGEN = 0 W RL = 50 W CL = 5 pF f = 1 MHz W, pF, Room Full Room Full Full Room Room Room Room Room Room Room 1 79 - 81 - 82 14 14 48 44 pF pC dB 23 8 48 52 33 35 ns
Power Supply
Power Supply Range Power Supply Current Notes: a. b. c. d. e. f. Room = 25°C, Full = as determined by the operating suffix. Typical values are for design aid only, not guaranteed nor subject to production testing. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. Guarantee by design, nor subjected to production test. VIN = input voltage to perform proper function. Guaranteed by 5-V leakage testing, not production tested. V+ I+ VIN = 0 or V+ Full 1.8 0.01 5.5 1.0 V mA
Document Number: 72030 S-31575--Rev. B, 11-Aug-03
www.vishay.com
3
DG2016/DG2026
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
rON vs. VCOM and Supply Voltage
8 7 r ON - On-Resistance ( W ) 6 5 4 3 2 1 0 0 1 2 3 4 5 VCOM - Analog Voltage (V) 0 0 1 2 3 VCOM - Analog Voltage (V) V+ = 3.0 V, V+ = 5.0 V, T = 25_C IS = 10 mA r ON - On-Resistance ( W ) 5
rON vs. Analog Voltage and Temperature
4
V+ = 3 V 85_C 25_C - 40_C
3
2 V+ = 5 V 1 85_C 25_C - 40_C 4 5
Supply Current vs. Temperature
10000 10 mA 1 mA I+ - Supply Current (A) 100 mA 10 mA
Supply Current vs. Input Switching Frequency
V+ = 5 V
I+ - Supply Current (nA)
1000
100
V+ = 5 V VIN = 0 V V+ = 3 V VIN = 0 V
10
1 mA 100 nA
1 - 60
10 nA - 40 - 20 0 20 40 60 80 100 10 100 1K 10 K 100 K 1M 10 M
Temperature (_C)
Input Switching Frequency (Hz)
Leakage Current vs. Temperature
10000 V+ = 5 V 1000 Leakage Current (pA) INO(off), IINC(off) Leakage Current (pA) 100 75 50 25 0 - 25 - 50 - 75 1 - 60 - 100 0 1 ICOM(off)
Leakage vs. Analog Voltage
V+ = 5 V
ICOM(on)
100
ICOM(off)
ICOM(on)
INO(off), IINC(off)
10
- 40
- 20
0
20
40
60
80
100
2
3
4
5
Temperature (_C)
VCOM, VNO, VNC - Analog Voltage (V) Document Number: 72030 S-31575--Rev. B, 11-Aug-03
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DG2016/DG2026
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
60 50 40 30 20 tOFF V+ = 3 V 10 tOFF V+ = 5 V 0 - 60 - 90 - 40 - 20 0 20 40 60 80 100 100 K 1M 10 M Frequency (Hz) 100 M 1G Temperature (_C) tON V+ = 3 V tON V+ = 5 V Loss, OIRR, X TALK (dB)
Vishay Siliconix
Switching Time vs. Temperature
RL = 50 W
Insertion Loss, Off-Isolation Crosstalk vs. Frequency
10 LOSS
t ON / t OFF - Switching Time (m s)
- 10
- 30
- 50 OIRR - 70
XTALK
V+ = 5 V RL = 50 W
3.0 2.5 2.0 1.5 1.0 0.5 0.0 0
Switching Threshold vs. Supply Voltage
80 60 Q - Charge Injection (pC) 40 20 0 - 20 - 40 - 60 - 80 1 2 3 4 5 6 7 0
Charge Injection vs. Analog Voltage
- Switching Threshold (V)
V+ = 5 V
V+ = 3 V
VT
1
2
3
4
5
V+ - Supply Voltage (V)
VCOM - Analog Voltage (V)
TEST CIRCUITS
V+ Logic Input V+ Switch Input NO or NC IN Logic Input GND 0V CL (includes fixture and stray capacitance) VOUT + VCOM R L ) R ON RL 50 W CL 35 pF COM Switch Output VOUT Switch Output 0V tON tOFF VINH 50% VINL .9 x VOUT tr t 5 ns tf t 5 ns
R
Logic "1" = Switch On Logic input waveforms inverted for switches that have the opposite logic sense.
L
0
FIGURE 1. Switching Time
Document Number: 72030 S-31575--Rev. B, 11-Aug-03 www.vishay.com
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