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Details, datasheet, quote on part number:ES07D
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Datasheet text preview:
VISHAY
ES07B to ES07D
Vishay Semiconductors
Small Surface Mount Ultrafast Diodes
Features
· · · · For surface mounted applications Low profile package Ideal for automated placement Glass passivated
17249
· High temperature soldering: 260 °C/ 10 seconds at terminals
Packaging codes-options: GS18 - 10 K per 13" reel (8 mm tape), 50 K/box GS08 - 3 K per 7" reel (8 mm tape), 30 K/box
Mechanical Data
Case: JEDEC -DO219-AB (SMF®) Plastic case Polarity: Band denotes cathode end Weight: approx. 0.01 g
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified Parameter Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current Ttp = 105 °C TA = 65 °C1) Peak forward surge current 8.3 ms single half sine-wave TL = 25 °C Test condition Par t ES07B ES07D ES07B ES07D ES07B ES07D S ym b o l VRRM VRRM VRMS VRMS VDC VDC IF(AV) IF(AV) IFSM Value 100 200 70 140 100 200 1. 2 0. 5 30 Unit V V V V V V A A A
1) Mounted on epoxy glass PCB with 3 x 3 mm, Cu pads ( 40 µm thick)
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified Parameter Ther mal resistance junction to ambient air1) Operating junction and storage temperature range 1) Mounted on epoxy glass PCB with 3 x 3 mm, Cu pads ( 40 µm thick) Test condition Sym bol RJA TJ, TSTG Value 180 - 55 to + 150 Unit K/ W °C
Document Number 85737 Rev. 1.6, 17-Nov-03
www.vishay.com 1
ES07B to ES07D
Vishay Semiconductors Electrical Characteristics
Tamb = 25 °C, unless otherwise specified Parameter Maximum instantaneous forward voltage 1. 0 A
3)
VISHAY
Test condition
Sym bol VF IR IR t rr CJ
M in
Typ.
Max 0.98 10 50 25
Unit V µA µA ns pF
Maximum DC reverse current at TA = 25°C rated DC blocking voltage TA = 100°C Reverse recovery time Typical capacitance
3)
IF = 0.5 A, IR = 1 A, Irr = 0.25 A 4 V, 1 MHz
4
Pulse test, 300 µs pulse with 1 % duty cycle
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
10 7,00 6,00 1
IF [A] CD [pF]
f = 1MHz
5,00 4,00 3,00 2,00 1,00
0,1
typical @ 25°C typical @ 150°C typical @ 100°C
0,01
0,001 0,00
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0,20
0,40
0,60 0,80 VF [V]
1,00
1,20
1,40
0,00 0,1
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1
VR [V]
10
100
Figure 1. Typical Forward Characteristics
Figure 3. Typ. Diode Capacitance vs. Reverse Voltage
1,4
Average Forward Current [A]
1,2 1,0
ambient temperature tie point temperature
1000
100
TJ=25°C TJ=50°C TJ=75°C TJ=100°C TJ=125°C TJ=150°C TJ=0°C TJ=-50°C
IR [µA]
0,8 0,6
10
1
0,4 0,2 0,0 0 25
0,1
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100 50 75 Temperature (Ambient or Tie) [°C]
125
150
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0,01 0
20
40
60
80
100 VR [V]
120
140
160
180
200
Figure 2. Forward Current Derating Curve
Figure 4. Typical Reverse Characteristics
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Document Number 85737 Rev. 1.6, 17-Nov-03
VISHAY
Package Dimensions in mm
Cathode Band T op Vie w
ES07B to ES07D
Vishay Semiconductors
1.8 ± 0.1
1.0 ± 0.2
5 0.98 ± 0.1
2.8 ± 0.1
0.05 - 0.30
5 Detail Z enlarged
Z
0.60 ± 0.25
0.00 - 0.10 3.7 ± 0.2
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Mounting Pad Layout
1.6
1. 3
1. 4
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Document Number 85737 Rev. 1.6, 17-Nov-03
www.vishay.com 3
ES07B to ES07D
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements.
VISHAY
2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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Document Number 85737 Rev. 1.6, 17-Nov-03
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