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Details, datasheet, quote on part number:ES2F
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Datasheet text preview:
ES2F thru ES2G
Vishay Semiconductors
formerly General Semiconductor
Surface Mount Ultrafast Plastic Rectifier
DO-214AA (SMB)
Cathode Band
Reverse Voltage 300 to 400 V Forward Current 2.0 A Reverse Recovery Time 35 ns
0.086 (2.20) 0.077 (1.95)
0.155 (3.94) 0.130 (3.30)
Mounting Pad Layout
0.106 MAX (2.69 MAX)
0.180 (4.57) 0.160 (4.06)
0.083 MIN (2.10 MIN)
0.012 (0.305) 0.006 (0.152)
0.050 MIN (1.27 MIN) 0.220 REF
0.096 (2.44) 0.084 (2.13)
Dimensions in inches and (millimeters)
0.060 (1.52) 0.030 (0.76) 0.220 (5.59) 0.205 (5.21)
0.008 (0.203) Max.
Features
· Plastic package has Underwriters Laboratories Flammability Classification 94V-0 · Ideally suited for use in very high frequency switching power supplies, inverters and as free wheeling diodes · Ultrafast recovery time for high efficiency · Excellent high temperature switching · Glass passivated junction · High temperature soldering guaranteed: 250°C/10 seconds, at terminals
Mechanical Data
Case: JEDEC DO-214AA molded plastic body Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Weight: 0.003 oz., 0.093 g
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter Device marking code Maximum repetitive peak reverse voltage Working peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TL=110°C Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) at TL=110°C Maximum thermal resistance
(1)
Symbol VRRM VRWM VRMS VDC IF(AV) IFSM RJA RJL TJ, TSTG
ES2F EF 300 225 210 300 2.0 50
ES2G EG 400 300 280 400
Unit V V V V A A °C/W °C
Operating junction and storage temperature range
75 25 -55 to +150
Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
Maximum instantaneous forward voltage at 2.0A(2) Maximum DC reverse current TA=25°C at working peak reverse voltage TA=100°C Maximum reverse recovery time at IF = 0.5A, IR = 1.0A, Irr = 0.25A Maximum reverse recovery time at IF=1.0A, di/dt=100A/µs, VR=30V, Irr=0.1IRM Maximum reverse recovery current at IF=1.0A, di/dt=100A/µs, VR=30V, Irr=0.1IRM Maximum stored charge at IF=1.0A, di/dt=100A/µs, VR=30V, Irr=0.1IRM Typical junction capacitance at 4.0V, 1MHz
Note: (1) Units mounted on P.C.B. 5.0 x 5.0mm (0.013mm thick) land areas (2) Pulse test: 300µs pulse width, 1% duty cycle
VF IR trr trr IRM Qrr CJ
1.1 10 200 35 50 3.0 50 15
V µA ns ns A nC pF
Document Number 88588 30-Jun-03
www.vishay.com 1
ES2F thru ES2G
Vishay Semiconductors
formerly General Semiconductor
Ratings and Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 1 Maximum Forward Current Derating Curve
3.0
Fig. 2 Maximum Non-Repetitive Peak Forward Surge Current
60
Average Forward Rectified Current (A)
Resistive or Inductive Load
Peak Forward Surge Current (A)
8.3ms Single Half Sine-Wave (JEDEC Method) at TL = 110°C
50
2.0
40 30
1.0
20
10 0
0 80 90 100 110 120 130 140 150
1
10
100
Lead Temperature (°C)
Number of Cycles at 60 HZ
Fig. 3 Typical Instantaneous Forward Characteristics
100
Fig. 4 Typical Reverse Leakage Characteristics
Instantaneous Reverse Leakage Current (µA)
1,000
Instantaneous Forward Current (A)
TJ = 25°C Pulse Width = 300µs 1% Duty Cycle
TJ = 125°C
10
100
TJ = 125°C
1
TJ = 100°C TJ = 25°C
TJ = 100°C
10
0.1
1
TJ = 25°C
0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0.1 20 40 60 80 100
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 - Reverse Switching Characteristics
200 100
Fig. 6 - Typical Junction Capacitance
TJ = 25°C f=1.0 MHZ Vsig=50mVp-p
Recovered Stored Charge/ Reverse Recovery Time nC/ns
160
@5A,50A/µs
120
@2A,20A/µs @5A,50A/µs @2A,20A/µs @1A,100A/µs
Junction Capacitance, pF
trr Qrr 175
10
80
40
@1A,100A/µs
0 25 50 75 100 125 150
1 0.1
1
10
100
1,000
Junction Temperature, °C www.vishay.com 2
Reverse Voltage (V) Document Number 88588 30-Jun-03
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