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Details, datasheet, quote on part number:J108
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Datasheet text preview:
J/SST108 Series
Vishay Siliconix
NChannel JFETs
J108 J109 J110
PRODUCT SUMMARY
Part Number
J/SST108 J/SST109 J/SST110
SST108 SST109 SST110
VGS(off) (V)
3 to 10 2 to 6 0.5 to 4
rDS(on) Max (W)
8
ID(off) Typ (pA)
20 20 20
tON Typ (ns)
4 4 4
12
18
FEATURES
D D D D D Low On-Resistance: J108 <8 W Fast Switching--tON: 4 ns Low Leakage: 20 pA Low Capacitance: 11 pF Low Insertion Loss
BENEFITS
D D D D D Low Error Voltage High-Speed Analog Circuit Performance Negligible "Off-Error" Excellent Accuracy Good Frequency Response Eliminates Additional Buffering
APPLICATIONS
D D D D D Analog Switches Choppers Sample-and-Hold Normally "On" Switches Current Limiters
DESCRIPTION
The J/SST108 series is designed with high-performance analog switching applications in mind. It features low on-resistance, good off-isolation, and fast switching. The SST108 series is comprised of surface-mount devices featuring the lowest rDS(on) of any TO-236 (SOT-23) JFET device. The TO-226AA (TO-92) plastic package provides a low-cost option. Both the J and SST series are available in tape-and-reel for automated assembly (see Packaging Information). For similar products packaged in TO-206AC (TO-52), see the 2N5432/5433/5434 data sheet.
TO-226AA (TO-92)
TO-236 (SOT-23)
D
1
D
1 3 G
S
2
S
2
G
3
Top View SST108 (I8)* SST109 (I9)* SST110 (I0)* *Marking Code for TO-236
Top View J108, J109, J110
Document Number: 70231 S-04028--Rev. E, 04-Jun-01
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7-1
J/SST108 Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . 55 to 150_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW Notes a. Derate 2.8 mW/_C above 25_C
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
J/SST108 J/SST109 J/SST110
Parameter Static
Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Current Drain Cutoff Current Drain-Source On-Resistance Gate-Source Forward Voltage
Symbol
Test Conditions
Typa
Min
Max
Min
Max
Min
Max
Unit
V(BR)GSS VGS(off) IDSS IGSS IG ID(off) rDS(on) VGS(F)
IG = 1 mA , VDS = 0 V VDS = 5 V, ID = 1 mA VDS = 15 V, VGS = 0 V VGS = 15 V, VDS = 0 V TA = 125_C VDG = 10 V, ID = 10 mA VDS = 5 V, VGS = 10 V TA = 125_C VGS = 0 V, VDS v 0.1 V IG = 1 mA , VDS = 0 V
32
25 3 80 10
25 2 40 3 3 6
25 V 0.5 10 3 4 mA
0.01 5 0.01 0.02 1.0
nA 3 3 3
8 0.7
12
18
W V
Dynamic
Common-Source Forward Transconductance Common-Source Output Conductance Drain-Source On-Resistance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage gfs VDS = 5 V, ID = 10 mA, f = 1 kHz gos rds(on) Ciss VGS = 0 V, ID = 0 mA , f = 1 kHz VDS = 0 V V GS = 0 V f = 1 MHz VDS = 0 V VGS = 10 V f = 1 MHz SST J Series SST J Series 60 60 11 11 3.5 15 15 15 nV/ Hz 85 85 85 pF 0.6 8 17 mS
12
18
W
Crss en
VDG = 5 V, ID = 10 mA f = 1 kHz
Switching
Turn-On Time td(on) tr td(off) tf VDD = 1.5 V, VGS(H) = 0 V See Switching Diagram 3 1 4 18 NIP ns
Turn-Off Time
Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%.
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7-2
Document Number: 70231 S-04028--Rev. E, 04-Jun-01
J/SST108 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
On-Resistance and Drain Current vs. Gate-Source Cutoff Voltage
20 rDS(on) Drain-Source On-Resistance ( ) 1000 IDSS @ VDS = 15 V, VGS = 0 V 16 800 rDS(on) Drain-Source On-Resistance ( ) 50
I DSS
On-Resistance vs. Drain Current
TA = 25_C
rDS @ ID = 10 mA, VGS = 0 V
Saturation Drain Current (mA)
40 VGS(off) = 2 V 30
12
rDS
600
8
IDSS
400
20 4 V 10 8 V 0 1 10 ID Drain Current (mA) 100
4
200
0 0 2 4 6 8 10 VGS(off) Gate-Source Cutoff Voltage (V)
0
On-Resistance vs. Temperature
40 rDS(on) Drain-Source On-Resistance ( ) ID = 10 mA rDS changes X 0.7%/_C 32 Drain Current (mA) VGS(off) = 2 V 24 80 100
Output Characteristics
VGS(off) = 2 V
60 VGS = 0 V 0.2 V 40 0.4 V 20 0.6 V 0.8 V
16 4 V 8 8 V
0 55 35 15 5 25 45 65 85 105 125
I D
0 0 2 4 6 8 10
TA Temperature (_C)
VDS Drain-Source Voltage (V)
Turn-On Switching
5 tr approximately independent of ID VDD = 1.5 V, RG = 50 VGS(L) = 10 V Switching Time (ns) 30
Turn-Off Switching
td(off) independent of device VGS(off) VDD = 1.5 V, VGS(L) = 10 V 24 tf 18 VGS(off) = 2 V
4 Switchng Time (ns)
3 td(on) @ ID = 10 mA
td(on) @ ID = 25 mA
2
12
VGS(off) = 8 V
1
tr
6
td(off)
0 0 2 4 6 8 10 VGS(off) Gate-Source Cutoff Voltage (V)
0 0 5 10 15 20 25 ID Drain Current (mA)
Document Number: 70231 S-04028--Rev. E, 04-Jun-01
www.vishay.com
7-3
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