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Part: J202
Category:
Description: Low Noise/low Voltage
Company: Vishay Intertechnology
Datasheet: Download J202 datasheet File size : 213 kB
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J/SST201 Series
New Product
Vishay Siliconix
N-Channel JFETs
J201 J202 J204
PRODUCT SUMMARY
Part Number
J/SST201 J/SST202 J/SST204
SST201 SST202 SST204
VGS(off) (V)
- 0.3 to -1.5 - 0.8 to -4 - 0.3 to -2
V(BR)GSS Min (V)
- 40 - 40 - 25
gfs Min (mS)
0.5 1 0.5
IDSS Min (mA)
0.2 0.9 0.2
FEATURES
D D D D Low Cutoff Voltage: J201 <1.5 V High Input Impedance Very Low Noise High Gain: AV = 80 @ 20 mA
BENEFITS
D Full Performance from Low Voltage Power Supply: Down to 1.5 V D Low Signal Loss/System Error D High System Sensitivity D High Quality Low-Level Signal Amplification
APPLICATIONS
D High-Gain, Low-Noise Amplifiers D Low-Current, Low-Voltage Battery-Powered Amplifiers D Infrared Detector Amplifiers D Ultra High Input Impedance Pre-Amplifiers
DESCRIPTION
The J/SST201 series features low leakage, very low noise, and low cutoff voltage for use with low-level power supplies. The J/SST201 is excellent for battery powered equipment and low current amplifiers. The J series, TO-226 (TO-92) plastic package, provides low cost, while the SST series, TO-236 (SOT-23) package, provides surface-mount capability. Both the J and SST series are available in tape-and-reel for automated assembly (see Packaging Information). For similar products in TO-206AA (TO-18) packaging, see the 2N4338/4339/4340/4341 data sheet. For applications information see AN102 and AN106.
TO-226AA (TO-92) 1 D 2 S G 3 2 1
TO-236 (SOT-23)
D
S
3
G
Top View Top View J201 J202 J204 SST201 (P1)* SST202 (P2)* SST204 (P4)* *Marking Code for TO-236
Document Number: 70233 S-03006--Rev. F, 17-Feb-03
www.vishay.com
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J/SST201 Series
Vishay Siliconix
New Product
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 40 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 55 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW Notes a. Derate 2.8 mW/_C above 25_C
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
J/SST201 J/SST202 J/SST204c
Parameter Static
Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Current Drain Cutoff Current Gate-Source Forward Voltage
Symbol
Test Conditions
Typa
Min
Max
Min
Max
Min
Max
Unit
V(BR)GSS VGS(off) IDSS IGSS IG ID(off) VGS(F)
IG = -1 mA , VDS = 0 V VDS = 15 V, ID = 10 nA VDS = 15 V, VGS = 0 V VGS = -20 V, VDS = 0 V TA = 125_C VDG = 10 V, ID = 0.1 mA VDS = 15 V, VGS = -5 V IG = 1 mA , VDS = 0 V -2 -1 -2 2 0.7
- 40 - 0.3 0.2 - 1.5 1 - 100
- 40 - 0.8 0.9 -4 4.5 - 100
- 25 - 0.3 0.2 -2 3 - 100
V mA pA nA pA V
Dynamic
Common-Source Forward Transconductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage gfs Ciss Crss en VDS = 15 V, VGS = 0 V f = 1 kHz VDS = 15 V, VGS = 0 V f = 1 MHz VDS = 10 V, VGS = 0 V f = 1 kHz 4.5 pF 1.3 6 nV/ Hz NPA, NH 0.5 1 0.5 mS
Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%. c. See 2N/SST5484 Series for J204 typical characteristic curves.
www.vishay.com
6-2
Document Number: 70233 S-03006--Rev. F, 17-Feb-03
J/SST201 Series
New Product
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
10 IDSS - Saturation Drain Current (mA)
Vishay Siliconix
Drain Current and Transconductance vs. Gate-Source Cutoff Voltage
IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDS = 10 V, VGS = 0 V f = 1 kHz
5
Gate Leakage Current
10 nA gfs - Forward Transconductance (mS) IG @ ID = 500 mA ID = 100 mA 1 nA IG - Gate Leakage (A) TA = 125_C IGSS @ 125_C ID = 500 mA ID = 100 mA 1 pA TA = 25_C IGSS @ 25_C
8
4
6 gfs 4 IDSS
3
100 pA
2
10 pA
2
1
0 0 -1 -2 -3 -4 -5 VGS(off) - Gate-Source Cutoff Voltage (V)
0
0.1 pA 0 15 VDG - Drain-Gate Voltage (V) 30
1500 rDS(on) - Drain-Source On-Resistance ( )
On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage
10 gfs - Forward Transconductance (mS)
2
Common-Source Forward Transconductance vs. Drain Current
VGS(off) = -1.5 V VDS = 10 V f = 1 kHz
1200
gos
8
1.6 TA = -55_C
gos - Output Conductance (mS)
900
6 rDS 4
1.2 25_C 0.8
600
300 rDS @ ID = 100 mA, VGS = 0 V gos @ VDS = 10 V, VGS = 0 V, f = 1 kHz 0 0 -1 -2 -3 -4 -5 VGS(off) - Gate-Source Cutoff Voltage (V)
2
0.4
125_C
0
0 0.01 0.1 ID - Drain Current (mA) 1
400
Output Characteristics
VGS(off) = -0.7 V VG S = 0 V
2
Output Characteristics
VGS(off) = -1.5 V
360 - 0.1 V ID - Drain Current (mA) ID - Drain Current (mA)
1.6 VGS = 0 V 1.2 - 0.3 V 0.8 - 0.6 V 0.4 - 1.2 V - 0.9 V
240
160
- 0.2 V - 0.3 V
80
- 0.5 V
- 0.4 V
0 0 4 8 12 16 20 VDS - Drain-Source Voltage (V) Document Number: 70233 S-03006--Rev. F, 17-Feb-03
0 0 4 8 12 16 20 VDS - Drain-Source Voltage (V) www.vishay.com
6-3
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