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Part: J211
Category:
Description: High Frequency
Company: Vishay Intertechnology
Datasheet: Download J211 datasheet File size : 226 kB
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J/SSTJ210 Series
Vishay Siliconix
N-Channel JFETs
J210 J211 J212
PRODUCT SUMMARY
Part Number
J210 J/SSTJ211 J/SSTJ212
SSTJ211 SSTJ212
VGS(off) (V)
1 to 3 2.5 to 4.5 4 to 6
V(BR)GSS Min (V)
25 25 25
gfs Min (mS)
4 6 7
IDSS Min (mA)
2 7 15
FEATURES
D Excellent High Frequency Gain: J211/212, Gps 12 dB (typ) @ 400 MHz D Very Low Noise: 3 dB (typ) @ 400 MHz D Very Low Distortion D High ac/dc Switch Off-Isolation D High Gain: AV = 35 @ 100 mA
BENEFITS
D D D D D Wideband High Gain Very High System Sensitivity High Quality of Amplification High-Speed Switching Capability High-Quality Low-Level Signal Amplification
APPLICATIONS
D D D D High-Frequency Amplifier/Mixer Oscillator Sample-and-Hold Very Low Capacitance Switches
DESCRIPTION
The J/SSTJ210 Series n-channel JFETs are general-purpose and high-frequency amplifiers for a wide range of applications. These devices feature low leakage (IGSS < 100 pA). capability. The J/SSTJ210 Series is available in tape-and-reel for automated assembly (see Packaging Information).
The TO-226AA (TO-92) plastic package, provides low cost while the TO-236 (SOT-23) package provides surface-mount
For similar dual products, see the 2N5911/5912 and U440/441 data sheets.
TO-226AA (TO-92)
D 1 D S 2 S G 3 J210 J211 J212 2 1
TO-236 (SOT-23)
3
G SSTJ211 (Z1)* SSTJ212 (Z2)* *Marking Code for TO-236
Top View Top View
For applications information see AN104. Document Number: 70234 S-04028--Rev. E, 04-Jun-01 www.vishay.com
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J/SSTJ210 Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . 55 to 150_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW Notes a. Derate 2.8 mW/_C above 25_C
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
J210 J/SSTJ211 J/SSTJ212
Parameter Static
Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Currenta Drain Cutoff Current Gate-Source Forward Voltage
Symbol
Test Conditions
Typa
Min
Max
Min
Max
Min
Max
Unit
V(BR)GSS VGS(off) IDSS IGSS IG ID(off) VGS(F)
IG = 1 mA , VDS = 0 V VDS = 15 V, ID = 1 nA VDS = 15 V, VGS = 0 V VGS = 15 V, VDS = 0 V TA = 125_C VDG = 10 V, ID = 1 mA VDS = 10 V, VGS = 8 V IG = 1 mA , VDS = 0 V
35
25 1 2 3 15 100
25 2.5 7 4.5 20 100
25 V 4 15 6 40 100 mA pA nA pA V
1 0.5 1 1 0.7
Dynamic
Common-Source Forward Transconductanceb Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage gfs gos Ciss Crss en VDS = 15 V, VGS = 0 V f = 1 MHz VDS = 15 V, VGS = 0 V f = 1 kHz VDS = 15 V, VGS = 0 V f = 1 kHz 4 12 150 4 pF 1.5 5 nV/ Hz NZF 6 12 200 7 12 200 mS mS
Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%.
www.vishay.com
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Document Number: 70234 S-04028--Rev. E, 04-Jun-01
J/SSTJ210 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance vs. Gate-Source Cutoff Voltage
50 IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDS = 10 V, VGS = 0 V f = 1 kHz 20 gfs Forward Transconductance (mS) 100 nA IG(on) @ ID 16 10 nA TA = 125_C IG Gate Leakage 1 nA IGSS @ 125_C 100 pA 1 mA 1 mA 10 pA TA = 25_C 1 pA IGSS @ 25_C 10 mA 10 mA
Gate Leakage Current
IDSS Saturation Drain Current (mA)
40
30
12
20
gfs
8
10
IDSS
4
0 0 2 4 6 8 10 VGS(off) Gate-Source Cutoff Voltage (V)
0
0.1 pA 0 4 8 12 16 20 VDG Drain-Gate Voltage (V)
On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage
200 rDS(on) Drain-Source On-Resistance ( ) gos gos Output Conductance (mS) 160 160 200 gfs Forward Transconductance (mS) 10
Common-Source Forward Transconductance vs. Drain Current
VGS(off) = 5 V 8 TA = 55_C 6 25_C 4 125_C 2 VDS = 10 V f = 1 kHz
120
120
80 rDS 40 rDS @ ID = 1 mA, VGS = 0 V gos @ VDS = 10 V, VGS = 0 V f = 1 kHz 0 2 4 6 8 10
80
40
0 VGS(off) Gate-Source Cutoff Voltage (V)
0
0 0.1 1 ID Drain Current (mA) 10
Output Characteristics
5 VGS(off) = 2 V 4 ID Drain Current (ľA) VGS = 0 V 0.2 V 0.4 V 3 0.6 V 2 0.8 V 1 1.0 V 1.2 V 0 0 0.2 0.4 0.6 0.8 1 VDS Drain-Source Voltage (V) 0 0 0.2 ID Drain Current (mA) 12 15
Output Characteristics
VGS(off) = 5 V VGS = 0 V 0.5 V 9 2.0 V 6 2.5 V 3.0 V 3 3.5 V 1.0 V 1.5 V
0.4 0.6 0.8 VDS Drain-Source Voltage (V)
1
Document Number: 70234 S-04028--Rev. E, 04-Jun-01
www.vishay.com
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Others parts begin by j2
J2-1
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