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Part: J304
Category:
Description: High Frequency
Company: Vishay Intertechnology
Datasheet: Download J304 datasheet File size : 226 kB
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J304/305
Vishay Siliconix
N-Channel JFETs
PRODUCT SUMMARY
Part Number
J304 J305
VGS(off) (V)
2 to 6 0.5 to 3
V(BR)GSS Min (V)
30 30
gfs Min (mS)
4.5 3
IDSS Min (mA)
5 1
FEATURES
D Excellent High Frequency Gain: J304, Gps 11 dB (typ) @ 400 MHz D Very Low Noise: 3.8 dB (typ) @ 400 MHz D Very Low Distortion D High ac/dc Switch Off-Isolation D High Gain: AV = 60 @ 100 mA
BENEFITS
D D D D D Wideband High Gain Very High System Sensitivity High Quality of Amplification High-Speed Switching Capability High Low-Level Signal Amplification
APPLICATIONS
D D D D High-Frequency Amplifier/Mixer Oscillator Sample-and-Hold Very Low Capacitance Switches
DESCRIPTION
The J304/305 n-channel JFETs provide high-performance amplification, especially at high-frequency. These products are available in tape and reel for automated assembly (see Package Information). For similar products in TO-236 (SOT-23) packages, see the 2N/SST5484 series data sheet, or in TO-206AF (TO-72) packages, see the 2N/SST4416 series data sheet.
TO-226AA (TO-92)
S
1
D
2
G
3
Top View
ABSOLUTE MAXIMUM RATINGS
Gate-Source/Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V Forward Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to 150_C Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW Notes a. Derate 2.8 mW/_C above 25_C
Document Number: 70236 S-04028--Rev. D, 04-Jun-01
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7-1
J304/305
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
J304 J305
Parameter Static
Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb
Symbol
V(BR)GSS VGS(off) IDSS IGSS IG ID(off) rDS(on) VGS(F)
Test Conditions
IG = 1 mA , VDS = 0 V VDS = 15 V, ID = 1 nA VDS = 15 V, VGS = 0 V VGS = 20 V, VDS = 0 V
Typa
35
Min
Max
Min
Max
Unit
V
30 2 5 6 15 100
30 0.5 1 3 8 100
V mA pA nA pA W V
2 0.2 20 2 200 0.7
Gate Reverse Current Gate Operating Currentb
TA = 100_C VDG = 10 V, ID = 1 mA VDS = 10 V, VGS = 6 V VGS = 0 V, ID = 1 mA IG = 1 mA , VDS = 0 V
Drain Cutoff Current Drain-Source On-Resistance Gate-Source Forward Voltage
Dynamic
Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Common-Source Output Capacitance Equivalent Input Noise Voltage gfs VDS = 15 V, VGS = 0 V, f = 1 kHz gos Ciss Crss Coss en VDS = 10 V, VGS = 0 V f = 100 Hz VDS = 15 V, VGS = 0 V f = 1 MHz 2.2 0.7 1 10 nV/ Hz pF 50 50 mS 4.5 7.5 3 mS
TYPICAL HIGH FREQUENCY SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits (Typ)
J304 J305
Parameter High-Frequency
Common-Source Input Conductance Common-Source Input Susceptance Common-Source Output Conductance Common-Source Output Susceptance Common-Source Forward Transconductance Common-Source Power Gain Noise Figure
Symbol
giss biss goss boss gfs Gps NF
Test Conditions
100 MHz
400 MHz
100 MHz
400 MHz
Unit
mS mS mS mS
VDS = 15 V, VGS = 0 V
80 2 60
800 7.5 80 3.6 4.2 11 3.8
80 2 60 0.8 3
VDS = 15 V, VGS = 0 V
0.8 4.4
VDS = 15 V, ID = 5 mA RG = 1 kW
20 1.7
dB
Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms, duty cycle v2%.
NH
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7-2
Document Number: 70236 S-04028--Rev. D, 04-Jun-01
J304/305
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance vs. Gate-Source Cutoff Voltage
20 10 rDS(on) Drain-Source On-Resistance ( ) gfs Forward Transconductance (mS) 500
On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage
50
IDSS Saturation Drain Current (mA)
16
IDSS
8
rDS @ ID = 1 mA, VGS = 0 V gos @ VDS = 10 V, VGS = 0 V
400 f = 1 kHz
g os Output Conductance ( µS)
40
12
gfs
6
300
rDS gos
30
8
4
200
20
4
IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDS = 10 V, VGS = 0 V f = 1 kHz
2
100
10
0 0 2 4 6 8 10 VGS(off) Gate-Source Cutoff Voltage (V)
0
0 0 2 4 6 8 10 VGS(off) Gate-Source Cutoff Voltage (V)
0
Gate Leakage Current
100 nA 5 mA 10 nA 1 mA IG Gate Leakage (A) 1 nA TA = 125_C 0.1 mA gfs Forward Transconductance (mS) 8 10
Common-Source Forward Transconductance vs. Drain Current
VGS(off) = 3 V VDS = 10 V f = 1 kHz
6 25_C 4
TA = 55_C
100 pA 5 mA 10 pA TA = 25_C 1 mA 0.1 mA 1 pA
IGSS @ 125_C
125_C 2
IGSS @ 25_C
0.1 pA 0 4 8 12 16 20 VDG Drain-Gate Voltage (V)
0 0.1 1 ID Drain Current (mA) 10
Output Characteristics
10 VGS(off) = 2 V 8 ID Drain Current (mA) ID Drain Current (mA) VG S = 0 V 6 0.2 V 0.4 V 4 0.6 V 0.8 V 2 1.0 V 1.2 V 1.4 V 0 2 4 6 8 10 12 15
Output Characteristics
VGS(off) = 3 V
VGS = 0 V 9 0.3 V 0.6 V 6 0.9 V 1.2 V 1.5 V 3 1.8 V
0
0 0 2 4 6 8 10 VDS Drain-Source Voltage (V)
VDS Drain-Source Voltage (V) Document Number: 70236 S-04028--Rev. D, 04-Jun-01
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7-3
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