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Part: J309
Category:
Description: Very High Frequency
Company: Vishay Intertechnology
Datasheet: Download J309 datasheet File size : 209 kB
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J/SST/U308 Series
Vishay Siliconix
N-Channel JFETs
J308 J309 J310
PRODUCT SUMMARY
Part Number
J308 J309 J310 SST308 SST309 SST310 U309 U310
SST308 SST309 SST310
U309 U310
VGS(off) (V)
1 to 6.5 1 to 4 2 to 6.5 1 to 6.5 1 to 4 2 to 6.5 1 to 4 2.5 to 6
V(BR)GSS Min (V)
25 25 25 25 25 25 25 25
gfs Min (mS)
8 10 8 8 10 8 10 10
IDSS Min (mA)
12 12 24 12 12 24 12 24
FEATURES
D Excellent High Frequency Gain: Gps 11.5 dB @ 450 MHz D Very Low Noise: 2.7 dB @ 450 MHz D Very Low Distortion D High ac/dc Switch Off-Isolation
BENEFITS
D D D D D Wideband High Gain Very High System Sensitivity High Quality of Amplification High-Speed Switching Capability High Low-Level Signal Amplification
APPLICATIONS
D D D D High-Frequency Amplifier/Mixer Oscillator Sample-and-Hold Very Low Capacitance Switches
DESCRIPTION
The J/SST/U308 series offers superb amplification characteristics. Of special interest is its high-frequency performance. Even at 450 MHz, this series offers high power gain at low noise. Low-cost J series TO-226AA (TO-92) packaging supports automated assembly with tape-and-reel options. The SST series TO-236 (SOT-23) package provides surface-mount capabilities and is available with tape-and-reel options. The U series hermetically-sealed TO-206AC (TO-52) package supports full military processing. (See Military and Packaging Information for further details.) For similar dual products packaged in the TO-78, see the U430/431 data sheet.
TO-226AA (TO-92)
D 1 D 1
TO-236 (SOT-23)
S 3 G
TO-206AC (TO-52)
1
S
2
S
2
G
3 Top View J308 J309 J310
Top View SST308 (Z8)* SST309 (Z9)* SST310 (Z0)* *Marking Code for TO-236
2
D Top View U309 U310
3
G and Case
For applications information see AN104.
Document Number: 70237 S-04028--Rev. G, 04-Jun-01 www.vishay.com
7-1
J/SST/U308 Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V Gate Current : (J/SST Prefixes) . . . . . . . . . . . . . . . . . . . . 10 mA (U Prefix) . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C Storage Temperature : (J/SST Prefixes) . . . . . . . . . . . . . . 55 to 150_C (U Prefix) . . . . . . . . . . . . . . . . . . . . 65 to 175_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to 150_C Power Dissipation : (J/SST Prefixes)a . . . . . . . . . . . . . . . . . 350 mW (U Prefix)b . . . . . . . . . . . . . . . . . . . . . . . 500 mW
Notes a. Derate 2.8 mW/_C above 25_C b. Derate 4 mW/_C above 25_C
SPECIFICATIONS FOR J/SST308, J/SST309 AND J/SST310 (TA = 25_C UNLESS NOTED)
Limits
J/SST308 J/SST309 J/SST310
Parameter Static
Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb
Symbol
Test Conditions
Typa
Min Max Min
Max Min
Max Unit
V(BR)GSS VGS(off) IDSS IGSS IG rDS(on) VGS(F)
IG = 1 mA , VDS = 0 V VDS = 10 V, ID = 1 nA VDS = 10 V, VGS = 0 V VGS = 15 V, VDS = 0 V TA = 125_C VDG = 9 V, ID = 10 mA VGS = 0 V, ID = 1 mA IG = 10 mA VDS = 0 V J
35
25 1 12 6.5 60 1 1
25 1 12 4 30 1 1
25 2 24 6.5 60 1 1
V V mA nA mA pA W
0.002 0.001 15 35 0.7
Gate Reverse Current Gate Operating Current Drain-Source On-Resistance Gate-Source Forward Voltage
1
1
1
V
Dynamic
Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage gfs gos Ciss Crss en 14 VDS = 10 V, ID = 10 mA f = 1 kHz J VDS = 10 V VGS = 10 V f = 1 MHz VDS = 10 V, ID = 10 mA f = 100 Hz SST J SST 110 4 4 1.9 1.9 6 nV/ Hz 2.5 2.5 2.5 pF
8
250 5
10 250 5
8
250 5
mS mS
High Frequency
Common-Gate Forward Transconductance Common-Gate Output Conductance Common-Gate Power Gainc f = 105 MHz gfg gog VDS = 10 V ID = 10 mA Gpg NF f = 450 MHz f = 105 MHz f = 450 MHz f = 105 MHz f = 450 MHz f = 105 MHz f = 450 MHz 14 13 0.16 0.55 16 11.5 1.5 2.7 NZB dB mS
Noise Figure
Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%. c. Gain (Gpg) measured at optimum input noise match.
www.vishay.com
7-2
Document Number: 70237 S-04028--Rev. G, 04-Jun-01
J/SST/U308 Series
Vishay Siliconix
SPECIFICATIONS FOR U309 AND U310 (TA = 25_C UNLESS NOTED)
Limits
U309 U310
Parameter Static
Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb
Symbol
Test Conditions
Typa
Min
Max
Min
Max
Unit
V(BR)GSS VGS(off) IDSS IGSS IG rDS(on) VGS(F)
IG = 1 mA , VDS = 0 V VDS = 10 V, ID = 1 nA VDS = 10 V, VGS = 0 V VGS = 15 V, VDS = 0 V
35
25 1 12 4 30
25 2.5 24 6 60
V V mA nA mA pA W
0.002 0.001 15 35 0.7
0.15 0.15
0.15 0.15
Gate Reverse Current Gate Operating Current Drain-Source On-Resistance Gate-Source Forward Voltage
TA = 125_C VDG = 9 V, ID = 10 mA VGS = 0 V, ID = 1 mA IG = 10 mA , VDS = 0 V
1
1
V
Dynamic
Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage gfs gos Ciss Crss en VDS = 10 V, VGS = 10 V f = 1 MHz VDS = 10 V, ID = 10 mA f = 1 kHz 14 110 4 1.9 6 10 250 5 2.5 10 250 5 pF 2.5 nV/ Hz mS mS
VDS = 10 V, ID = 10 mA f = 100 Hz
High Frequency
Common-Gate Forward Transconductance Common-Gate Output Conductance f = 105 MHz gfg f = 450 MHz f = 105 MHz gog VDS = 10 V ID = 10 mA Common-Gate Power Gainc Gpg f = 450 MHz f = 105 MHz f = 450 MHz f = 105 MHz Noise Figure NF f = 450 MHz Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%. c. Gain (Gpg) measured at optimum input noise match. 2.7 3.5 3.5 NZB 14 13 0.16 0.55 16 11.5 1.5 14 10 2 14 10 dB 2 mS
Document Number: 70237 S-04028--Rev. G, 04-Jun-01
www.vishay.com
7-3
Others parts begin by j3
J3-1
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