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Details, datasheet, quote on part number:JPAD50
 
 
Part:JPAD50
Description:Low-leakage Pico-amp Diode
Company:Vishay Intertechnology
Datasheet:Download JPAD50 datasheet   File size : 21 kB
Request For quote:  Find where to buy JPAD50
 



Datasheet text preview:
PAD/JPAD/SSTPAD Series
Vishay Siliconix
Low-Leakage Pico-Amp Diodes
PAD1 PAD5 PAD50
PRODUCT SUMMARY
Part Number
PAD1 PAD5/JPAD5/SSTPAD5 PAD50/JPAD50 SSTPAD100
JPAD5 JPAD50
SSTPAD5 SSTPAD100
IR Max (pA)
­1 ­5 ­50 ­100
FEATURES
D Ultralow Leakage: PAD1 <1 pA D Ultralow Capacitance: PAD1 <0.8 pF D Two-Leaded Package
BENEFITS
D Negligible Circuit Leakage Contribution D Circuit "Transparent" Except to Shunt High-Frequency Spikes D Simplicity of Operation
APPLICATIONS
D Op Amp Input Protection D Multiplexer Overvoltage Protection
DESCRIPTION
The PAD/JPAD/SSTPAD series of extremely low-leakage diodes provides a superior alternative to conventional diode technology when reverse current (leakage) must be minimized. They feature leakage currents ranging from ­1 pA (PAD1) to ­100 pA (SSTPAD100) to support a wide range of applications. These devices are well suited for use in applications such as input protection for operational amplifiers. The hermetically sealed TO-206AF (TO-72) package allows full military processing per MIL-S-19500 (see Military Information). The TO-226A (TO-92) plastic package provides a low-cost option. The TO-236 (SOT-23) package provides surface-mount capability. Both J and SST series are available in tape-and-reel for automated assembly. (See Packaging Information.)
TO-206AF (TO-72) Modified
C 1 3 Case C
TO-206AA (TO-18) Modified
TO-226AA (TO-92) Modified
TO-236 (SOT-23)
C 1
1 C 1 3 C 2 A
2 A Top View PAD1 PAD5 Top View PAD50
2 A and Case
A
2 Top View Top View JPAD5 JPAD50 SSTPAD5 (05)* SSTPAD100 (01) *Marking Code for TO-236
Document Number: 70339 S-04029--Rev. H, 04-Jun-01
www.vishay.com
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PAD/JPAD/SSTPAD Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGSa
Forward Current: Total Device Dissipation: Operation Junction Temp: (PAD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA (JPAD/SSTPAD ) . . . . . . . . . . . . . . . . . . . 10 mA (PAD)b . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW (JPAD/SSTPAD)b . . . . . . . . . . . . . . . . 350 mW (PAD) . . . . . . . . . . . . . . . . . . . . . . . ­55 to 175_C (JPAD/SSTPAD )c . . . . . . . . . . . . ­55 to 150_C Notes: a. TA = 25_C unless otherwise noted. b. Derate 2 mW/_C above 25_C. c. Derate 2.8 mW/_C above 25_C.
Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
SPECIFICATIONS SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits Parameter Static
PAD1 PAD5/JPAD5/SSTPAD5 Reverse Current IR VR = ­20 V PAD50/JPAD50 SSTPAD100 PAD1/PAD5 Reverse Breakdown Voltage BVR IR = ­1 mA SSTPAD5/100 All Others Forward Voltage Drop VF IF = 1 mA ­45 ­30 ­35 ­5 ­10 ­60 ­55 V ­55 0.8 1.5 ­50 ­100 ­0.3 ­1 ­1 ­5 pA
Symbol
Test Conditions
Min
Typa
Max
Unit
Dynamic
PAD1/PAD5 Reverse Capacitance CR VR = ­5V, f = 1 MHz All Others 0.5 1.5 0.8 pF 2
Notes: a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Reverse Current vs. Reverse Voltage
­100 PAD/JPAD/SSTPAD5 VR = ­20 V I R @ 125_C ­100 PAD1 IR (pA) IR (pA) ­10
­1000
Reverse Current vs. Temperature
­10
­1
All Others PAD1/5
PAD/JPAD/SSTPAD5 ­1 IR @ 25_C PAD1 ­0.1 0 ­6 ­12 VR (V) www.vishay.com ­18 ­24 ­30 ­0.01 ­55 ­35 ­15 5 25 45 65 85 105 125 ­0.1
TA ­ Temperature (_C) Document Number: 70339 S-04029--Rev. H, 04-Jun-01
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