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Details, datasheet, quote on part number:P4KE550
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Datasheet text preview:
P4KE530 and P4KE550
Vishay Semiconductors
TRANSZORB® Transient Voltage Suppressors
Steady State Power 1W Peak Pulse Power 300W Breakdown Voltage 530, 550V
DO-204AL (DO-41 Plastic)
Features
· Plastic package has Underwriters Laboratory Flammability Classification 94V-0 · Protects power IC controllers such as TOPSwitch® · Glass passivated junction · High temperature soldering guaranteed: 250°C/10 seconds at terminals · Excellent clamping capability · Available in unidirectional only
1.0 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) DIA.
0.205 (5.2) 0.160 (4.1)
Mechanical Data
Case: JEDEC DO-204AL molded plastic body over passivated junction Terminals: Axial leads, solderable per MIL-STD-750, Method 2026 Polarity: The band denotes the cathode, which is positive with respect to the anode under normal TVS operation Mounting Position: Any Weight: 0.012 oz., 0.3 g Packaging Codes Options (Antistatic): 51 1K per Bulk box, 10K/carton 54 5.5K per 13" paper Reel (52mm horiz. tape), 16.5K/carton 73 3K per horiz. tape & Ammo box, 30K/carton
TA= 25OC unless otherwise noted.
1.0 (25.4) MIN. 0.034 (0.86) 0.028 (0.71) DIA.
Dimensions are in inches and (millimeters)
Maximum Ratings and Thermal Characteristics
Parameter Steady state power dissipation (Note 3) Peak pulse power dissipation (Note 1, 2, Fig. 1) Stand-off voltage Typical thermal resistance junction-to-lead Typical thermal resistance junction-to-ambient Operating junction and storage temperature range Symbol PM(AV) PPPM VWM RJL RJA TJ, TSTG
P4KE530 1.0
P4KE550
Unit W W
Minimum 300 477 27 75 55 to +150 495
V °C/W °C/W °C
Electrical Characteristics
Parameter Minimum breakdown voltage at 100µA
TA= 25OC unless otherwise noted.
Symbol V(BR) Vc ID
P4KE530 530 760 1.0 650 90 7.5
P4KE550 550
Unit V V µA mV°C pF
Max. clamping voltage at 400mA, 10/1000µs-waveform Maximum DC reverse leakage current at VWM Typical temperature coefficient of V(BR) Typical capacitance (Note 4)
Notes: (1) (2) (3) (4)
at 0V at 200V
CJ
Non repetitive current pulse per Fig.3 and derated above 25OC per Fig. 2 Peak pulse power waveform is 10/1000µs Lead temperature at 75OC = TL Measured at 1MHZ
Document Number 88366 03-Mar-03
www.vishay.com 1
P4KE530 and P4KE550
Vishay Semiconductors Ratings and Characteristic Curves (T
A
= 25°C unless otherwise noted)
Fig. 1 Peak Pulse Power Rating Curve
PPPM Peak Pulse Power (kW)
Non-repetitive Pulse Waveform shown in Fig. 3 TA = 25°C 10
Fig. 2 Pulse Derating Curve
Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage, %
100
100
75
50
1
25
0.1
0.1µs
1.0µs
10µs
100µs
0 1.0ms 10ms
0
25
50
75
100
125
150
175
td Pulse Width (sec.)
TA Ambient Temperature (°C)
Fig. 3 Pulse Waveform
150
IPPM Peak Pulse Current, % IRSM
tr = 10µsec. Peak Value IP P M
100
TJ = 25°C Pulse Width (td) is defined as the point where the peak current decays to 50% of IPPM
Half Value IPP 2 IPPM 50 10/1000µsec. Waveform as defined by R.E.A.
td 0 0 1.0 2.0 3.0 4.0
t Time (ms)
Application Notes
· Respect Thermal Resistance (PCB Layout) as the temperature coefficient also contributes to the clamping voltage. · Select minimum breakdown voltage, so you get acceptable power dissipation and PCB tie point temperature. Devices with higher breakdown voltage will have a shorter conduction time and will dissipate less power. · Clamping voltage is influenced by internal resistance design approximation is 7V per 100mA slope. · Keep temperature of TVS lower than TOPSwitch as a recommendation. · Maximum current is determined by the maximum TJ and can be higher than 300mA. Contact supplier for different clamping voltage / current arrangements. · Minimum breakdown voltage can be customized for other applications. Contact supplier · TOPSwitch is a registered trademark of Power Integrations, Inc.
www.vishay.com 2
Document Number 88366 03-Mar-03
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