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Details, datasheet, quote on part number:P4SMA440A
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Datasheet text preview:
P4SMA Series
Vishay Semiconductors
formerly General Semiconductor
Surface Mount TRANSZORB® Transient Voltage Suppressors
DO-214AC (SMA)
0.065 (1.65) 0.049 (1.25)
Cathode Band
0.110 (2.79) 0.100 (2.54)
0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152)
ded ge xten Ran Ee ltag Vo
Dimensions in inches and (millimeters)
V(BR) Unidirectional 6.8 to 540V V(BR) Bidirectional 6.8 to 220V Peak Pulse Power 400W
Mounting Pad Layout
0.094 MAX. (2.38 MAX.)
0.066 MIN. (1.68 MIN.)
0.090 (2.29) 0.078 (1.98)
0.052 MIN. (1.32 MIN.) 0.220 (5.58) REF
0.008 (0.203) MAX. 0.208 (5.28) 0.194 (4.93)
0.060 (1.52) 0.030 (0.76)
Features
· Plastic package has Underwriters Laboratory Flammability Classification 94V-0 · Optimized for LAN protection applications · Ideal for ESD protection of data lines in accordance with IEC 1000-4-2 (IEC801-2) · Ideal for EFT protection of data lines in accordance with IEC1000-4-4 (IEC801-4) · Low profile package with built-in strain relief for surface mounted applications · Glass passivated junction · Low incremental surge resistance, excellent clamping capability · 400W peak pulse power capability with a 10/1000µs waveform, repetition rate (duty cycle): 0.01% (300W above 91V) · Very Fast response time
Mechanical Data
Case: JEDEC DO-214AC molded plastic over passivated chip Terminals: Solder plated, solderable per MIL-STD-750, Method 2026. High temperature soldering guaranteed: 250°C/10 seconds at terminals. Polarity: For uni-directional types the band denotes the cathode, which is positive with respect to the anode under normal TVS operation. Mounting Position: Any Weight: 0.002 oz., 0.064 g Packaging Codes Options (Antistatic): 51 1K per Bulk box, 20K/carton 61 1.8K per 7" plastic Reel (12mm tape), 36K/carton 5A 7.5K per 13" plastic Reel (12mm tape), 75K/carton
Devices for Bidirectional Applications
For bi-directional devices, use suffix CA (e.g. P4SMA10CA). Electrical characteristics apply in both directions.
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter Peak power dissipation with a 10/1000µs waveform Peak pulse current with a 10/1000µs waveform
(1)(2)
Symbol
(Fig. 1)
Value 400 See Next Table 1.0 40 120 30 65 to +150
Unit W A W A °C/W °C/W °C
PPPM IPPM PM(AV) IFSM RJA RJL TJ, TSTG
(1)
(Fig. 3)
Power dissipation on infinite heatsink, TA = 50°C Peak forward surge current 8.3ms single half sine-wave uni-directional only (2) Thermal resistance junction to ambient air (3) Thermal resistance junction to leads Operating junction and storage temperature range
Notes: (1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25°C per Fig. 2. Rating is 300W above 91V. (2) Mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pads to each terminal (3) Mounted on minimum recommended pad layout
Document Number 88367 09-Oct-02
www.vishay.com 1
P4SMA Series
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified. V
General Semiconductor Part Number P4SMA6.8A P4SMA7.5A P4SMA8.2A P4SMA9.1A P4SMA10A P4SMA11A P4SMA12A P4SMA13A P4SMA15A P4SMA16A P4SMA18A P4SMA20A P4SMA22A P4SMA24A P4SMA27A P4SMA30A P4SMA33A P4SMA36A P4SMA39A P4SMA43A P4SMA47A P4SMA51A P4SMA56A P4SMA62A P4SMA68A P4SMA75A P4SMA82A P4SMA91A P4SMA100A P4SMA110A P4SMA120A P4SMA130A P4SMA150A P4SMA160A P4SMA170A P4SMA180A P4SMA200A P4SMA220A P4SMA250A P4SMA300A P4SMA350A P4SMA400A P4SMA440A P4SMA480A P4SMA510A P4SMA540A
Notes: (1) (2) (3) (4)
F
= 3.5V at IF = 25A (uni-directional only)
Device Marking Code UNI 6V8A 7V5A 8V2A 9V1A 10A 11A 12A 13A 15A 16A 18A 20A 22A 24A 27A 30A 33A 36A 39A 43A 47A 51A 56A 62A 68A 75A 82A 91A 100A 110A 120A 130A 150A 160A 170A 180A 200A 220A 250A 300A 350A 400A 440A 480A 510A 540A BI 6V8C 7V5C 8V2C 9V1C 10C 11C 12C 13C 15C 16C 18C 20C 22C 24C 27C 30C 33C 36C 39C 43C 47C 51C 56C 62C 68C 75C 82C 91C 100C 110C 120C 130C 150C 160C 170C 180C 200C 220C -- -- -- -- -- -- -- --
Breakdown Voltage V(BR) at IT (1) (V) Min 6.45 7.13 7.79 8.65 9.50 10.5 11.4 12.4 14.3 15.2 17.1 19.0 20.9 22.8 25.7 28.5 31.4 34.2 37.1 40.9 44.7 48.5 53.2 58.9 64.6 71.3 77.9 86.5 95.0 105 114 124 143 152 162 171 190 209 237 285 333 380 418 456 485 513 Max 7.14 7.88 8.61 9.55 10.5 11.6 12.6 13.7 15.8 16.8 18.9 21.0 23.1 25.2 28.4 31.5 34.7 37.8 41.0 45.2 49.4 53.6 58.8 65.1 71.4 78.8 86.1 95.5 105 116 126 137 158 168 179 189 210 231 263 315 368 420 462 504 535 567
Test Current IT (mA) 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0
Stand-off Voltage VWM (V) 5.80 6.40 7.02 7.78 8.55 9.40 10.2 11.1 12.8 13.6 15.3 17.1 18.8 20.5 23.1 25.6 28.2 30.8 33.3 36.8 40.2 43.6 47.8 53.0 58.1 64.1 70.1 77.8 85.5 94.0 102 111 128 136 145 154 171 185 214 256 300 342 376 408 434 459
Maximum Reverse Leakage at VWM ID(4) (µA) 1000 500 200 50 10 5.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0
Maximum Maximum Maximum Peak Pulse Clamping Temp. Current Voltage at Coefficient (2) IPPM IPPM of V(BR) (A) VC (V) (% / °C) 38.1 35.4 33.1 29.9 27.6 25.6 24.0 22.0 18.9 17.8 15.9 14.4 13.1 12.0 10.7 9.7 8.8 8.0 7.4 6.7 6.2 5.7 5.2 4.7 4.3 3.9 3.5 3.2 2.2 2.0 1.8 1.7 1.4 1.4 1.3 1.2 1.1 0.9 0.87 0.73 0.62 0.55 0.50 0.46 0.43 0.41 10.5 11.3 12.1 13.4 14.5 15.6 16.7 18.2 21.2 22.5 25.2 27.7 30.6 33.2 37.5 41.4 45.7 49.9 53.9 59.3 64.8 70.1 77.0 85.0 92.0 104 113 125 137 152 165 179 207 219 234 246 274 328 344 414 482 548 602 658 698 740 0.057 0.061 0.065 0.068 0.073 0.075 0.078 0.081 0.084 0.086 0.089 0.090 0.092 0.09 0.096 0.097 0.098 0.099 0.100 0.101 0.101 0.102 0.103 0.104 0.104 0.105 0.105 0.106 0.106 0.107 0.107 0.107 0.106 0.108 0.108 0.108 0.108 0.108 0.110 0.110 0.110 0.110 0.110 0.110 0.110 0.110
Pulse test: tp 50ms Surge current waveform per Fig. 3 and derate per Fig. 2 All terms and symbols are consistent with ANSI/IEEE CA62.35 For bidirectional types with VR 10 Volts and less, the ID limit is doubled
www.vishay.com 2
Document Number 88367 09-Oct-02
P4SMA Series
Vishay Semiconductors
formerly General Semiconductor
Ratings and Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 1 Peak Pulse Power Rating Curve
Peak Pulse Power (PPP) or Current (IPPM) Derating in Percentage, %
100 100
Fig. 2 Pulse Derating Curve
PPPM -- Peak Pulse Power (kW)
Non-repetitive Pulse Waveform shown in Fig. 3 TA = 25°C 10
75
P4SMA100A -P4SMA220A 1
P4SMA6.8A -P4SMA91A
50
25 0.2 x 0.2" (5.0 x 5.0mm) Copper Pad Areas 0 0 25 50 75 100 125 150 175 200
0.2 x 0.2" (5.0 x 5.0mm) Copper Pad Areas 0.1 0.1µs 1.0µs 10µs 100µs 1.0ms 10ms
td -- Pulse Width (sec.)
TA -- Ambient Temperature (°C)
Fig. 3 Pulse Waveform
150 10,000
Fig. 4 Typical Junction Capacitance
CJ -- Junction Capacitance (pF)
TJ = 25°C f = 1.0MHz Vsig = 50mVp-p 1,000 Measured at Stand-Off Voltage, VWM Uni-Directional
IPPM -- Peak Pulse Current, % IRSM
tr = 10µsec. Peak Value IPPM
100
TJ = 25°C Pulse Width (td) is defined as the point where the peak current decays to 50% of IPPM
Half Value -- IPP 2 IPPM 50 10/1000µsec. Waveform as defined by R.E.A.
100
Bi-Directional
td 0 10 0 1.0 2.0 3.0 4.0 1 10 100 200
t -- Time (ms)
V(BR) -- Breakdown Voltage (V)
Fig. 5 Typical Transient Thermal Impedance
IFSM -- Peak Forward Surge Current (A)
1000 200
Fig. 6 - Maximum Non-Repetitive Forward Surge Current Uni-Directional Only
TJ = TJ max. 8.3ms Single Half Sine-Wave (JEDEC Method)
Transient Thermal Impedance (°C/W)
100
100
50
10
1 0.001
10 1 5 10 50 100
0.01
0.1
1
10
100
1000
tp -- Pulse Duration (sec) Document Number 88367 09-Oct-02
Number of Cycles at 60 Hz www.vishay.com 3
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